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Efficient Power Conversion (EPC) Introduces 96% Efficient, 1 MHz Buck Converter Demonstration Board Featuring eGaN FETs

Categories: Press Releases

EPC9107 demonstrates size reduction and efficiency enhancement for power conversion achieved using high frequency switching eGaN power transistors

EL SEGUNDO, Calif.—June, 2013 — Efficient Power Conversion Corporation (EPC) introduces the EPC9107, a fully functional buck power conversion demonstration circuit.  This board is a 9 V-28 V input to 3.3 V, 15 A maximum output current, 1MHz buck converter.  It uses the EPC2015< eGaN FET in conjunction with the LM5113 100V half-bridge gate driver from Texas Instruments. The EPC9107 demonstrates the reduced size and performance capabilities of high switching frequency eGaN FETs when coupled with this dedicated eGaN driver.

The EPC9107 demonstration board is 3” square and contains a fully closed-loop buck converter with optimized control loop. The complete power stage including eGaN FETs, driver, inductor and input/output caps is in an ultra compact 0.5” x 0.5” layout to showcase the performance that can be achieved using the eGaN FETs with the LM5113 eGaN driver.

Despite its small size, the board has peak power efficiency greater than 96% and is capable of delivering 15 amps of current at 3.3 volts. To assist the design engineer, the EPC9107 demonstration board is easy to set up and contains various probe points to facilitate simple waveform measurement and efficiency calculation.

A Quick Start Guidehttp://epc-co.com/epc/documents/guides/EPC9107_qsg.pdf, containing set up procedures, circuit diagram, performance curves and a bill of material is included with the EPC9107 demo board for reference and ease of use.

EPC9107 demo boards are priced at $195.94 each and are available for immediate delivery from Digi-Key at http://digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en

Design Information and Support for eGaN FETs:

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as servers, wireless power transmission, envelope tracking, RF transmission, power-over-ethernet (PoE), solar micro inverters, energy efficient lighting, and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

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eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press Contact

Efficient Power Conversion Corporation Joe Engle, 310.986.0350, [email protected]