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Efficient Power Conversion Corporation (EPC) Market Leading eGaN FET Receives Top 10 Power Products Award from Electronic Products China

Categories: Press Releases

Efficient Power Conversion Corporation (EPC) Market Leading eGaN® FET Receives Top 10 Power Products Award from Electronic Products China

EL SEGUNDO, Calif. – September, 2012 - Efficient Power Conversion Corporation (www.epc-co.com) announces that its EPC9102 has been recognized by Electronic Products China with a Top 10 Power Products Award – Technology Breakthrough Award.

The EPC9102 is an isolated 1/8th brick converter. This board is a 36 V – 60 V input to 12 V output, 375 kHz phase-shifted full bridge converter with 17 A maximum output current. The EPC9102 demonstrates that an eGaN FET based DC/DC converter helps designers increase output power and power density within the form factor constraints of industry standard brick converters.

“It is an honor to receive this recognition as an industry leading product from Electronic Products China. The EPC9102 showcases the performance that can be readily achieved at an operating frequency that is roughly 50% - 100% higher than similar commercial eighth brick DC-DC converters and is an excellent example of why the full range of EPC’s eGaN FETs are being adopted by customers as higher performance replacements for silicon-based MOSFETs,” noted Alex Lidow, CEO, Efficient Power Conversion Corporation.

Electronic Products China, a leading electronics industry magazine, judges products on achievement of a significant technological advancement, an innovative design, or a substantial enhancement in price/performance. A presentation ceremony for the winners of this year’s awards took place on September 20, 2012 in Beijing during 21iC and Electronic Products China’s 11th Power Technology Conference, supported by U.S. IDG and Hearst Publication Group.

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as servers, wireless power transmission, envelope tracking, RF transmission, power-over-ethernet (PoE), solar micro inverters, energy efficient lighting, and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs. Visit our web site: www.epc-co.com.

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Press Contact

Efficient Power Conversion Corporation Joe Engle, 310.986.0350 [email protected]