EL SEGUNDO, Calif. – December, 2011 - Efficient Power Conversion Corporation (www.epc-co.com) announces today that it has been recognized with a Leading Product Award by EDN China Innovation Award 2011 in its Power Device and Module category. In its seventh year, the EDN China Innovation Award 2011 is the benchmark event for recognizing product innovation by China’s electronics design engineers and managers.
“It is an honor to receive this recognition as an industry leading product from EDN China. The EPC2010 is one member of our family of eGaN FETs being adopted by customers as higher performance replacements for silicon-based MOSFETs,” noted Alex Lidow, CEO, Efficient Power Conversion Corporation.
EPC2010 is EPC’s second-generation 200 Volt enhancement mode gallium nitride (eGaN) power transistor with high frequency switching, enhanced performance in a lead-free, RoHS package.
The EPC2010 FET is a 200 VDS device with a maximum RDS(ON) of 25 milliohms with 5 V applied to the gate. It has an increased pulsed current rating of 60 A (compared with 40 A for the EPC1010), improved RDS(ON) at very low gate voltages, and lower capacitance.
Compared to a state-of-the-art silicon power MOSFET with similar on-resistance, the EPC2010 is smaller and has many times superior switching performance. Applications that benefit from eGaN FET performance include RF envelope tracking, wireless power transmission, high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, hard-switched and high frequency circuits.
An application note and datasheet for EPC2010 eGaN can be found at http://bit.ly/GaNgn2 and http://epc-co.com/epc/Products/eGaNFETs.aspx respectively.
About EDN China
EDN China Innovation Awards 2011 featured nine major technology categories: Power Device and Module, Embedded System, Microprocessor/DSP, Programmable Logic, Analog/Mixed Signal IC, Test & Measurement, Development Tool and Software, Passive Component and Sensor, Communications & Networking IC. Besides, the Engineers’ Most Favored Distributor was selected. EDN China started 17 years ago as the first publication focusing on electronics designs and knowledge exchange in the country. It has more than 400,000 registered readers. For details, please visit website www.ednchina.com.
EPC is the leader in enhancement mode Gallium Nitride based power management devices. EPC is the first to introduce enhancement-mode Gallium-Nitride-on-Silicon (eGaN) FETs as power MOSFET replacements in applications such as servers, netbooks, notebooks, LED lighting, cell phones, base stations, micro-inverters, and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs. Visit our web site: www.epc-co.com.
eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.
Efficient Power Conversion: Joe Engle tel: 310.986.0350 email: firstname.lastname@example.org