News

Sign up today to get the latest news and updates from EPC on new product announcements, applications work, and much more. Sign up for EPC email updates or text "EPC" to 22828.

Efficient Power Conversion Corporation (EPC) Expands eGaN® FET Family with Second Generation 100 Volt, 30 milliohm Power Transistor

Categories: Press Releases

EPC2007 delivers high frequency switching with enhanced performance in lead-free, RoHS compliant package.

EL SEGUNDO, Calif. – September, 2011 - Efficient Power Conversion Corporation (www.epc-co.com) announces the introduction of the EPC2007 as the newest member of EPC’s second-generation enhanced performance eGaN FET family. The EPC2007 is environmentally friendly; being lead free, RoHS-compliant (Restriction of Hazardous Substances), and halogen free.

The EPC2007 FET is a 1.87 mm2, 100 VDS, 6 A device with a maximum RDS(ON) of 30 milliohms. This second generation eGaN FET provides significant performance advantages over the first-generation EPC1007 eGaN device. The EPC2007 is fully enhanced at a lower gate voltage and has greater immunity to fast switching transients than the predecessor.

Compared to a state-of-the-art silicon power MOSFET with similar on-resistance, the EPC2007 is much smaller and has many times superior switching performance. Applications that benefit from eGaN FET performance include hard-switched and high frequency circuits such as isolated DC-DC power supplies, point-of-load converters, and class D audio amplifiers.

“With the introduction of the EPC2007 we continue to add to our industry-leading eGaN FET portfolio providing power design engineers the opportunity to increase efficiency and reduce size of their power conversion systems when compared with silicon-based MOSFETs,” noted Alex Lidow, co-founder and CEO.

In 1k piece quantities, the EPC2007 is priced at $1.31 and is immediately available through Digi-Key Corporation at http://digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en

Design Support

An application note detailing the performance improvements of the EPC2007 eGaN FET can be found at http://epc-co.com/epc/documents/product-training/Characteristics_of_Second_Generation_eGaN_FETs.pdf

Table 1 – Summary of EPC2007 Specification Ratings

About EPC

EPC is the leader in enhancement mode Gallium Nitride based power management devices. EPC was the first to introduce enhancement-mode Gallium-Nitride-on-Silicon (eGaN) FETs as power MOSFET replacements in applications such as servers, netbooks, notebooks, LED lighting, cell phones, base stations, flat-panel displays, and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs. Visit our web site: www.epc-co.com.

eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press Contact

Efficient Power Conversion Corporation Joe Engle, 310.986.0350 [email protected]