Sign up today to get the latest news and updates from EPC on new product announcements, applications work, and much more. Sign up for EPC email updates or text "EPC" to 22828.
National Semiconductor Introduces Industry’s First 100V Half-bridge Gate Driver for Enhancement-mode Gallium-Nitride Power FETs
National Semiconductor Corp. (NYSE:NSM) today introduced the industry’s first 100V half-bridge gate driver optimized for use with enhancement-mode Gallium-Nitride (GaN) power field-effect transistors (FETs) in high-voltage power converters. Enhancement-mode GaN FETs enable new levels of efficiency and power density compared to standard metal-oxide semiconductor field-effect transistors (MOSFETs) due to their low on-resistance (Rdson) and gate charge (Qg) as well as their ultra-small footprint, but driving them reliably presents significant new challenges. National’s LM5113 driver integrated circuit (IC) eliminates these challenges, enabling power designers to realize the benefits of GaN FETs in a variety of popular power topologies.