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Efficient Power Conversion Corporation (EPC) Introduces Industry-Leading Second Generation 200 Volt Enhancement Mode Gallium Nitride (eGaN®) Power Transistor

Categories: Press Releases

EPC2010 delivers high frequency switching with enhanced performance in lead-free, RoHS compliant package.

EL SEGUNDO, Calif. – June 2011 - Efficient Power Conversion Corporation (www.epc-co.com) announces the introduction of the EPC2010 as the newest member of EPC’s second-generation enhanced performance eGaNfield effect transistor (FET) family. The EPC2010 is environmentally friendly, being both lead-free and RoHS-compliant (Restriction of Hazardous Substances).

The EPC2010 FET is a 200 VDS device with a maximum RDS(ON) of 25 milliohms with 5 V applied to the gate. This eGaN FET provides significant performance advantages over the first-generation EPC1010 eGaN device. The EPC2010 has an increased pulsed current rating of 60 A (compared with 40 A for the EPC1010), improved RDS(ON) at very low gate voltages, and lower capacitance.

Compared to a state-of-the-art silicon power MOSFET with similar on-resistance, the EPC2010 is smaller and has many times superior switching performance. Applications that benefit from eGaN FET performance include high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, hard-switched and high frequency circuits.

“EPC was the first company to make gallium nitride power FETs commercially available. With our second-generation of products, we are now raising the bar for the performance of gallium nitride FETs. In addition, our new generation of eGaN products are the first gallium nitride FETs to be offered as lead-free and RoHS-compliant,” said Alex Lidow, co-founder and CEO.

In 1k piece quantities, the EPC2010 is priced at $5.06 and is immediately available through Digi-Key Corporation at http://digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en

Design Support

A development board, the EPC9003, is available to demonstrate the performance of the EPC2010 and to expedite design-in efforts. http://epc-co.com/epc/documents/datasheets/EPC2010_datasheet_final.pdf

An application note detailing the performance improvements of the EPC2010 eGaN can be found at http://epc-co.com/epc/documents/product-training/Characteristics_of_Second_Generation_eGaN_FETs.pdf

For Related Information and Support for all eGaN FETs:

About EPC

EPC is the leader in enhancement mode Gallium Nitride based power management devices. EPC was the first to introduce enhancement-mode Gallium-Nitride-on-Silicon (eGaN) FETs as power MOSFET replacements in applications such as servers, netbooks, notebooks, LED lighting, cell phones, base stations, flat-panel displays, and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs. Visit our web site: www.epc-co.com.

eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press contact: Joe Engle tel: 310.986.0350 email: joe.engle@epc-co.com

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