News

Sign up today to get the latest news and updates from EPC on new product announcements, applications work, and much more. Sign up for EPC email updates or text "EPC" to 22828.

How to GaN: Driving eGaN FETs and Layout Considerations

Categories: Articles

The previous columns in this series discussed the benefits of eGaN(r) FETs and their potential to achieve higher efficiencies and higher switching speeds than possible with silicon MOSFETs. This installment will discuss driver and layout considerations to improve the performance achievable with eGaN FETs.

EEWeb
By: Alex Lidow
August, 2013