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Professional Quality Sound with 96% Power Efficiency – EPC Demonstration Board Featuring eGaN® FETs Delivers High Quality Audio Performance in Space Saving Design

Categories: Press Releases

EPC9106 Class D audio amplifier reference design, using high frequency switching gallium nitride power transistors, demonstrates efficiency enhancement, size reduction and eliminates need for a heat sink while delivering prosumer quality sound.

EL SEGUNDO, Calif. — November 2013 — Efficient Power Conversion Corporation (EPC) introduces the EPC9106, a reference design for a 150 W, 8 Ω Class D audio amplifier. This demonstration board uses a Bridge-Tied-Load (BTL) design, composed of four ground-referenced half-bridge output stages, which allows scalability and expandability of the design. All elements that can impact the sonic performance of Class D Audio systems are minimized or eliminated in an eGaN FET-based system.

The EPC9106 features the EPC2016 eGaN FET in conjunction with the LM5113 100 V half-bridge gate driver from Texas Instruments. This board demonstrates that high quality sound can be achieved in a small size due to the performance capabilities of high frequency switching eGaN FETs when coupled with this dedicated eGaN driver. With this high efficiency, the EPC9106 design allows for the complete removal of any heat sink requirement, which also reduces the potential contribution to radiated EMI/EMC emissions.

The power block of the EPC9106 including eGaN FETs, driver, inductor and input/output caps is an ultra compact 11 mm x 11 mm layout. Despite its small size, the EPC9106 reference design achieves 96% efficiency at 150 W, 8 ohms, and 92% efficiency at 250 W, 4 ohms.

If you are interested in learning more about eGaN FETs for Class D audio and this demonstration board in particular, a visit by a trained EPC field application engineer can be scheduled by contacting EPC at the following:

Design Information and Support for eGaN FETs:

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as servers, wireless power transmission, envelope tracking, RF transmission, power-over-ethernet (PoE), solar micro inverters, energy efficient lighting, and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

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eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press Contact

Efficient Power Conversion Corporation Joe Engle, 310.986.0350 [email protected]