Award winning EPC9005 development board facilitates rapid design of high frequency switching power conversion systems based on the 40 V EPC2014 eGaN FET
EL SEGUNDO, Calif. – November 2013 - Efficient Power Conversion Corporation (www.epc-co.com; www.epc-co.com.cn) announces that its EPC9005 development board has been recognized with two industry awards in China; namely, Optimized Development Award of the Top 10 Power Products Award 2013 presented by Electronics Product China and Leading Product Award of China Innovation Award 2013 presented by EDN China magazine.
“It is an honor to receive these recognitions as an industry leading product from Electronics Product China and EDN China magazine”, noted Alex Lidow, CEO, Efficient Power Conversion Corporation. “Our EPC9005 board facilitates rapid design of high frequency switching power conversion systems based on our 40 V EPC2014 eGaN FET. The EPC9005 is a ready-made and easy-to-connect development board complete with well-documented engineering support materials.”
The EPC9005 measures 2” x 1.5” and contains two EPC2014 eGaN FET in a half-bridge configuration using Texas Instruments LM5113 gate driver, supply and bypass capacitors. The board contains all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation.
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About Electronics Product China
Electronic Products China, a leading electronics industry magazine, judges products on achievement of a significant technological advancement, an innovative design, or a substantial enhancement in price/performance. A presentation ceremony for the winners of this year’s awards took place on September 12, 2013 in Beijing during the magazine’s Power Conference.
About EDN China’s Innovation Award
EDN’s annual Innovation Awards started in the United States 23 years ago to recognize achievements in the design of ICs and related products. Today, it has developed to become one of the most prestigious awards for electronics design engineering in North America. Introduced to China in 2005 as the EDN China Innovation Awards, it has steadily grown to become one of the mainland China’s most anticipated and respected accolades for the electronics design industry, with winning products gaining wide recognition in the local market.
EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as servers, wireless power transmission, envelope tracking, RF transmission, power-over-ethernet (PoE), solar micro inverters, energy efficient lighting, and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.
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eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.
Efficient Power Conversion Corporation Joe Engle, 310.986.0350 [email protected]