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Efficient Power Conversion Wins ASPENCORE’s World Electronics Achievement Award as 2020 Contributor of the Year

Efficient Power Conversion Wins ASPENCORE’s World Electronics Achievement Award as 2020 Contributor of the Year

Efficient Power Conversion Corporation (EPC), the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs and ICs, has won the Contributor of the Year award of the prestigious World Electronics Achievement Awards (WEAA) 2020 for Dr. Alex Lidow, CEO and co-founder of Efficient Power Conversion.

The WEAA scheme honors products, companies and individuals that have made outstanding contributions to the innovation and development of the electronics industry worldwide. A committee comprising of ASPENCORE global senior industry analysts and online users from Asia, the US and Europe select the winners. ASPENCORE is the largest electronics industry media and SaaS group in the world featuring media titles including EE Times and EDN.

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EPC Launches 170 V eGaN FET Offering Best-in-Class Synchronous Rectification Performance and Cost to Seize High End Server and Consumer Power Supply Applications

EPC Launches 170 V eGaN FET Offering Best-in-Class Synchronous Rectification Performance and Cost to Seize High End Server and Consumer Power Supply Applications

EPC introduces 170 V, 6.8 milliohm EPC2059 eGaN® FET, offering designers a device that is smaller, more efficient, more reliable, and lower cost than currently available devices for high performance 48 V synchronous rectification.

EL SEGUNDO, Calif. — November 2019 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, advances the performance capability while lowering the cost of off-the-shelf gallium nitride transistors with the introduction of the EPC2059 (6.8 mΩ, 170 V) eGaN FET.  This device is the latest in a family of 100 V – 200 V solutions suitable for a wide-range of power levels and price points. They are designed to meet the increasing demands of 48 V – 56 V server and data center products as well as an array of consumer power supply applications for high end computing, including gaming PCs, LCD/LED TVs, and LED lighting.

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Efficient Power Conversion (EPC) Strengthens European Sales Team

Efficient Power Conversion (EPC) Strengthens European Sales Team

Stefan Werkstetter appointed as New Director of Sales for EMEA to focus on assisting customers in the adoption of eGaN® FETs and Integrated Circuits for applications including DC-DC, lidar, motor control, and other leading-edge power conversion systems

EL SEGUNDO, Calif. — November 2020 — To support the continued adoption of gallium nitride (GaN) FETs and Integrated Circuits in the European market, Efficient Power Conversion Corporation (EPC) is pleased to announce the appointment of Stefan Werkstetter as Director, Sales EMEA.

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Power Conversion with GaN

Power Conversion with GaN

GaN technology has seen significant improvements and has reached an optimal cost for MOSFET replacement. Starting in 2017, the adoption rate of GaN in 48-Vin DC-DC converters began to take on important connotations in the market. Various topologies, such as multi-phase and multi-level bucks are offering new solutions with greater efficiency to cover the energy demands of the IT and automotive markets.

Power Electronics News
November, 2020
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GaN ePower™ Ultrafast Switch with Integrated Gate Driver for Indirect Time-of-Flight Laser Drivers

GaN ePower™ Ultrafast Switch with Integrated Gate Driver for Indirect Time-of-Flight Laser Drivers

Gallium nitride FETs have continued to gain traction in many power electronic applications, but GaN technology is still in the early part of its life cycle. While there is much room to improve basic FET performance figures of merit an even more promising avenue is the development of GaN power ICs.

Bodo’s Power Systems
November, 2020
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25 Autonomous Vehicles Influencers to Follow by 2020

25 Autonomous Vehicles Influencers to Follow by 2020

The ultimate aim of Artificial Intelligence is to provide machines the ability to operate autonomously. One such area which is projected to grow exponentially over the next decade is Autonomous Vehicles. With Artificial Intelligence coupled with the rapid advances in electronics and computer technology, the word driverless will soon take over the roads.

AI Time Journal
October, 2020
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Digi-Key Electronics Partners with Efficient Power Conversion (EPC) to Host eGaN Motor Drive Webinar

Digi-Key Electronics Partners with Efficient Power Conversion (EPC) to Host eGaN Motor Drive Webinar

THIEF RIVER FALLS, Minnesota, USA – Digi-Key Electronics, the leading global electronic components distributor, announced that it has partnered with Efficient Power Conversion Corporation (EPC) to host a webinar on how to harness the power of eGaN FETS and ICs for motor drives. The webinar will take place on October 28 at 8 a.m. PST.

Register for the Harness the Power of GaN for Smaller, Lighter, More Precise Motor Drives webinar at EPC’s webinar page

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eGaN FETs from EPC Enable Multiple 250 W, 48 V DC-DC Solutions with 98% Efficiency for Ultra-Thin, High-Density Computing

eGaN FETs from EPC Enable Multiple 250 W, 48 V DC-DC Solutions with 98% Efficiency for Ultra-Thin, High-Density Computing

Two solutions for high power density DC-DC conversion using ultra-efficient eGaN® FETs from EPC (Efficient Power Conversion) enable highly efficient solutions for ultra-thin laptops, displays, high-end gaming systems and other physically thin consumer electronics.

EL SEGUNDO, Calif.— October, 2020 — EPC announces the availability of the EPC9148 and EPC9153 demonstration boards for 48 V DC-DC conversion.  The EPC9153 is a 250 W, extremely thin, power module using a simple, low-cost synchronous buck configuration delivering a 98.2% peak efficiency with a maximum component height of 6.5 mm.  The EPC9148 utilizes a multilevel topology enabling a maximum component height less than 4 mm, while maintaining a 98% peak efficiency.

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The Ascent of GaN: Redefining Power Conversion with GaN-on-Si Integrated Circuits

The Ascent of GaN: Redefining Power Conversion with GaN-on-Si Integrated Circuits

Discrete power transistors, whether silicon-based or GaN-on-silicon, are entering their final chapter. GaN-on-Si integrated circuits offer higher performance in a smaller footprint with significantly reduced cost and less engineering required. This article details how the ascent of GaN is redefining power conversion.

Bodo’s Power Systems
October, 2020
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EPC Increases Benchmark Performance Versus Silicon MOSFETs with Latest 100 V eGaN FET Family

EPC Increases Benchmark Performance Versus Silicon MOSFETs with Latest 100 V eGaN FET Family

These new generation 100 V eGaN® FETs are ideal for 48-VOUT synchronous rectification, class-D audio, infotainment, and lidar.

EL SEGUNDO, Calif.— September, 2020 — EPC, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, advances the performance capability while lowering the cost of off-the-shelf gallium nitride transistors with the introduction of EPC2218 and EPC2204 100 V eGaN FETs.  The applications for these leading-edge devices include synchronous rectification, class-D audio, infotainment systems, DC-DC converters (hard-switched and resonant), and lidar for autonomous cars, robotics, and drones.

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Testing Gallium Nitride Devices to Failure Under Extreme Voltage and Current Stress

Testing Gallium Nitride Devices to Failure Under Extreme Voltage and Current Stress

Standard qualification testing for semiconductors typically involves stressing devices at-or-near the limits specified in their data sheets for a prolonged period of time, or for a certain number of cycles, with the goal of demonstrating zero failures. By testing parts to the point of failure, an understanding of the amount of margin beyond the data sheet limits can be developed, but more importantly, an understanding of the intrinsic failure mechanisms of the semiconductor can be found.

Bodo’s Power Systems
September, 2020
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GaN HEMTs Outperform MOSFETs in Key Growth Applications

GaN HEMTs Outperform MOSFETs in Key Growth Applications

Silicon power MOSFETs have not kept pace with the evolutionary changes in the power electronics industry, where factors such as efficiency, power density, and smaller form factors are the main demands of the community. Silicon MOSFETs have reached their theoretical limits for power electronics, and with board space at a premium, power system designers need alternatives. Gallium nitride (GaN) is a high-electron-mobility transistor (HEMT) semiconductor that is adding real value in emerging applications.

EETimes
August, 2020
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EPC Doubles the Performance of its 200 V eGaN FET Family

EPC Doubles the Performance of its 200 V eGaN FET Family

These new generation 200 V eGaN® FETs are ideal for 48 VOUT synchronous rectification, class-D audio, solar microinverters and optimizers, and multilevel, high-voltage AC/DC converters

EL SEGUNDO, Calif.— August, 2020 — EPC, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, advances the performance capability while lowering the cost of off-the-shelf gallium nitride transistors with the introduction of the EPC2215 and EPC2207 200 V eGaN FETs.  The applications for these leading-edge devices include class D audio, synchronous rectification, solar MPPTs (maximum power point tracker), DC-DC converters (hard-switched and resonant), and multilevel high voltage converters.

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Categories: Press Releases

Podcast: Yes, We GaN: Gallium Nitride and Its Role in Power ICs

Podcast: Yes, We GaN: Gallium Nitride and Its Role in Power ICs

In this inaugural episode, guests are Alex Lidow, CEO of Efficient Power Conversion Corp., and Dinesh Ramanathan, co-CEO of NexGen Power Systems. EPC and NexGen both have expertise with gallium nitride technology and GaN power devices. EETimes speaks with both about the technology and about the market for GaN power devices.

EETimes
August, 2020
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GaN Reliability Testing Beyond AEC Proves Robustness for Automotive Lidar Applications

GaN Reliability Testing Beyond AEC Proves Robustness for Automotive Lidar Applications

Gallium nitride (GaN) power devices have been in volume production since March 2010 and have established a remarkable field-reliability record. An automotive application using GaN power devices in high volume is lidar (light detection and ranging) for autonomous vehicles. Lidar technology provides information about a vehicle’s surroundings, thus requiring high accuracy and reliability to ensure safety and performance. This article will discuss a novel testing mechanism developed by Efficient Power Conversion (EPC) to test eGaN devices beyond the qualification requirements of the Automotive Electronics Council (AEC) for the specific use case of lidar.

eeNews Europe
July 30, 2020
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GaN eases Silicon out

GaN eases Silicon out

Just like life’s reality, when the aged leaves the center stage for the younger ones, Silicon is taking the bow. The advent and adoption of Gallium Nitride (GaN) have succeeded in gradually easing out the old reliable Silicon. For over four decades, power management efficiency and cost have improved steadily as innovations in power MOSFET structures, technology, and circuit topologies have kept pace with the growing need for electrical power. In the new millennium, however, the rate of improvement has slowed dramatically as the silicon power MOSFET approaches its theoretical bounds. At the same time, the new material, GaN is steadily progressing on its journey toward a theoretical performance boundary that is 6,000 times better than the aging silicon MOSFET and 300 times better than the best GaN products on the market today.

EEWeb
July 16, 2020
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EPC and Microchip Develop 300 W 16th Brick, 48 V – 12 V DC-DC Converter Demonstration Board for High-Density Computing and Data Centers

EPC and Microchip Develop 300 W 16th Brick, 48 V – 12 V DC-DC Converter Demonstration Board for High-Density Computing and Data Centers

The combination of Microchip Technology’s digital signal controllers with ultra-efficient eGaN® FETs from EPC (Efficient Power Conversion) enable best-in-class power density of 730 W/in3 for high efficiency, low cost DC-DC Conversion.

EL SEGUNDO, Calif.— July, 2020 — EPC announces the availability of the EPC9143, a 300 W DC-DC voltage regulator in 16th brick size. The EPC9143 power module integrates Microchip’s dsPIC33CK digital signal controller (DSC) with the latest generation EPC2053 eGaN FETs from EPC to achieve 96% efficiency in a 48 V input to 12 V output conversion at 25 A.  The switching frequency of 500 kHz enables the 300 W in the very small 16th brick format which is just 33 mm x 22.9 mm (1.3 x 0.9 in). Additional phases can be added to this scalable 2-phase design to further increase power. The flexibility of the Microchip digital controllers allows the input voltage to be adjusted from 8 V – 72 V and the output voltage from 3.3 V – 25 V.

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Class D audio, Gallium-Nitride versus Silicon – Virtual Roundtable (part 2 of 2)

Class D audio, Gallium-Nitride versus Silicon – Virtual Roundtable (part 2 of 2)

In this second part of EEWorld’s “virtual roundtable” discussion on Class D audio, our panelists delve into the impact that the emergence of gallium-nitride (GaN) is having on Class D designs: Where are silicon devices still dominant? What are the performance benefits of using GaN in Class D amplifiers? And what are the anticipated future trends of GaN versus Silicon in Class D amplifiers? Joining us for this virtual roundtable are Joshua LeMaire (JL), Audio Systems Architect at Analog Devices; Steve Colino (SC), Vice President Strategic Technical Sales with Efficient Power Conversion; and Jens Tybo Jensen (JTJ), Head of Application Engineering for Class D Audio at Infineon Technologies.

EEWorld Online
July, 2020
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GaN Transistor for Space Missions

GaN Transistor for Space Missions

GaN power transistors are an ideal choice for power and RF applications to support extreme space missions. Through its new eGaN® solutions, EPC Space guarantees radiation hardness performance and SEE (single-event effects) immunity, with devices that are specifically designed for critical applications in commercial satellite space. These devices have exceptionally high electron mobility and a low-temperature coefficient with very low RDS(on) values.

EETimes
July, 2020
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