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EPC eGaN moves closer to the ideal capabilities of the power element

EPC eGaN moves closer to the ideal capabilities of the power element
Efficient Power Conversion (EPC) has dealt another blow to the silicon MOSFET power element with its Generation 5 (Gen5) process enhancements, bringing improved performance while decreasing the cost of off-the-shelf Gallium Nitride transistors and shrinking their die size and board footprint. Alex Lidow, EPC’s CEO/co-founder, and his team have once again put their expertise to work in their efforts to provide designers these unique power solution choices for new markets that need performance beyond what silicon devices have been able to provide. The team’s technical capabilities and ... Read more
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Gallium Nitride maker EPC takes a big step forward in its quest to kill silicon chips

Gallium Nitride maker EPC takes a big step forward in its quest to kill silicon chips
The $330 billion silicon chip industry is the foundation of everything electronic. But it’s slowing down as it reaches a new level of maturity that is prompting a bunch of mergers and acquisitions. That’s why Alex Lidow, an industry pioneer and the chief proponent of an alternative material to silicon — gallium nitride (GaN) — feels like his time has come. His company, Efficient Power Conversion (EPC), is unveiling a new generation of eGaN chips that are half the size of previous chips and have significantly higher performance. VentureBeat March 15, 2017 Read article Read more
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Thoughtful Board Design Unlocks the Promise of GaN

Thoughtful Board Design Unlocks the Promise of GaN
Power transistors with faster switching speeds will enable power supplies with smaller form factors and higher energy transfer efficiencies. Indeed, the elimination of heat sinks will give designers the ability to visualize entirely new form factors for power bricks and modules, including those enabling wireless power transfers. Gallium-nitride (GaN) transistors fabricated on silicon substrates can boost efficiencies and help shrink the footprint of power supplies. Electronic Design March, 2016 Read article Read more
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How to get 500W in an eighth-brick converter with GaN, part 1

How to get 500W in an eighth-brick converter with GaN, part 1
DC-DC “brick” converters are familiar to many engineers, and have wide usage in telecommunications, networking, data centers, and many other applications. This is due in large part to adoption of a common footprint defined by the Distributed-power Open Standards Alliance (DOSA) and generally accepted input/output voltage ranges. These converters provide isolation and voltage step-down, and have become increasingly sophisticated, with features that enable advanced system optimization and control. EDN Network November 23, 2015 By: John Glaser Read article Read more
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Why Consolidation In The Chip Industry Matters To You

Why Consolidation In The Chip Industry Matters To You
If expanding industries typically indicate vibrancy, a race to acquire and consolidate is generally reflective of the opposite – a period of slowed growth in mature, often once high-flying categories. And while many industries experience a period of stardom, followed by a sharp and steady decline, we should be extremely worried when they occur in industries that are fundamentally central to our socio-economic vitality. Forbes June 26, 2015 Read Article Read more
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WiGaN: eGaN FETs in Wide Load Range High Efficiency Wireless Power

Practical wireless power systems need to address the convenience factor of such systems. Standards such as the A4WP Class 3 have defined a broad coil impedance range that address the convenience factor and can be used as a starting point to compare the performance of the amplifiers. In this installment of WiGaN both the ZVS Class-D and Class-E amplifiers will be tested at 6.78 MHz to the A4WP Class 3 standard.

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Driving eGaN™ Transistors for Maximum Performance

The recent introduction of enhancement mode GaN transistors (eGaN™) as power MOSFET/ IGBT replacements in power management applications enables many new products that promise to add great system value. In general, an eGaN transistor behaves much like a power MOSFET with a quantum leap in performance, but to extract all of the newly-available eGaN transistor performance requires designers to understand the differences in drive requirements. By Johan Strydom and Alex Lidow September, 2010 Read the article Read more
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