Silicon power MOSFETs have not kept pace with the evolutionary changes in the power electronics industry where factors such as efficiency, power density, and smaller form factors are the main demands of the community. The power electronics industry has seen the theoretical limit of silicon MOSFETs reached and now needs to move to a new element. Gallium Nitride or GaN is a highly mobile semiconductor electron semiconductor (HEMT) that is proving to be a real added value in meeting new applications.

Power Electronics News
March 25, 2020
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Alex Lidow is the CEO of Efficient Power Conversion, probably the most prominent advocate for gallium nitride, delivering the first GaN transistor in 2009. After a decade of selling products, DESIGN&ELEKTRONIK editor Ralf Higgelke met him to discuss some of the latest advances in that area.

DESIGN&ELEKTRONIK
February 20, 2020
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Long talked about, wide bandgap gallium nitride-on-silicon (GaN-on-Si) transistors are now commercially available. They are being touted for replacing silicon-based MOSFETs, which are turning out to be inefficient for many high-performance power supply designs. Recently, several suppliers of GaN-on-Si-based HEMTs and FETs have emerged in the marketplace, among them Efficient Power Conversion (EPC). To expedite the evaluation of eGAN FETs for power supply designs transitioning from silicon MOSFETs to eGaN FETs, EPC has released several development boards in the last few years.

By Ashok Bindra
Digi-Key Article Library
July 15, 2014
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Alex Lidow, EPC CEO and co-founder, will be presenting results of a newly released family of enhancement mode (GaN®) HEMT transistors designed for high frequency operation into the 10 MHz range. The presentation will also highlight the stability of these devices under radiation exposure making them an ideal choice for high reliability applications.

EL SEGUNDO, Calif. — March, 2014 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power transistors will be presenting at the 39th Annual Government Microcircuit Applications and Critical Technology (GOMACTech) Conference which will be held in Charleston, South Carolina on April 3rd.

Enhancement-mode gallium nitride transistors have been commercially available since 2010. In that time they have enabled significant efficiency improvement in commercial DC-DC converters in a variety of topologies and at a variety of power levels. Enhancement-mode transistors have also demonstrated remarkable tolerance to gamma radiation and single event effects (SEE). Compared to radiation tolerant power MOSFETs, GaN FETs offer up to a 40 times improvement in key switching performance figures of merits. This enables designers of space-level power supplies to achieve the efficiencies of commercial state-of-the art systems.

“We are excited to have the opportunity to share the results of EPC’s latest generation of high performance eGaN power transistors and their exceptional results in radiation testing. These GaN-on-silicon power transistors, designed for multi-megahertz switching converter applications, allow the designer of radiation tolerant systems to achieve power densities and efficiencies that equal the commercial state-of-the-art,” said Alex Lidow.

About GOMACTech 2014

GOMACTech was established primarily to review developments in microcircuit applications for government systems. Established in 1968, the conference has focused on advances in systems being developed by the Department of Defense and other government agencies and has been used to announce major government microelectronics initiatives such as VHSIC and MIMIC, and provides a forum for government reviews.

About EPC

EPC is the leader in enhancement mode gallium nitride-based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, solar micro inverters, remote sensing technology (LiDAR), and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

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EPC CEO and applications experts will conduct a half-day seminar and technical presentations including an invited plenary session presentation on GaN FET technology and applications.

EL SEGUNDO, Calif. — August, 2013 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs will be presenting an educational seminar and several application-focused technical presentations at Darnell’s Energy Summit 2013. The conference will be held in Dallas, Texas from September 9th through the 12th.

This summit combines efficient power conversion, green building design and smart grid electronics into a single conference. The presentations will focus on advanced power conversion technologies needed for the successful development of next-generation power systems. It is a solutions-oriented event, with a strong emphasis on practical advances in power electronics and energy efficiency.

“It is noteworthy that the Darnell Energy Summit has selected EPC experts to conduct an educational seminar and to give technical papers focusing on GaN technology at their conference. This selection continues to demonstrate the superior performance of GaN technology has gained the interest and acceptance of those interested in improving energy efficiency,” said Alex Lidow, EPC’s co-founder and CEO.

Educational Seminar: GaN Transistors for Efficient Power Conversion
Presenter: Alex Lidow and David Reusch
Monday, September 9th (9:00 a.m. – 12:30 p.m.)

Expanding on the GaN FET technology textbook written by EPC, this seminar will explain how GaN High Electron Mobility Transistors (HEMT) work. This session will also discuss how to use these devices including showing the drivers, layout, and thermal considerations for high performance and high frequency power conversion. To showcase the real-world value of GaN technology, several applications including efficient DC-DC conversion, high frequency envelope tracking, and wireless power transfer will be presented. The seminar will conclude with a look at future of this emerging displacement technology.

Technical Presentations by EPC Experts Featuring GaN FETs:

• Plenary Session 
“GaN: Crushing Silicon One Application at a Time”
Presenter: Alex Lidow
​Tuesday, September 10th (Session 2.1, 1:45 p.m.)

• Technical Sessions 
“eGaN®FETs for High Frequency Hard-Switching Converters”
Presenters: Read more