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Efficient Power Conversion (EPC) Redefines Power Conversion with the Release of ePower Stage IC Family of Products

Efficient Power Conversion (EPC) Redefines Power Conversion with the Release of ePower Stage IC Family of Products

Efficient Power Conversion (EPC) introduces the first of a new integrated circuit (IC) product family offering higher performance and smaller solution size for high power density applications including DC-DC conversion, motor drive, and Class-D audio.

EL SEGUNDO, Calif.— March 2020 — EPC announces the introduction of an 80 V, 12.5 A power stage integrated circuit designed for 48 V DC-DC conversion used in high-density computing applications and in motor drives for e-mobility.

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Categories: Press Releases

Qualifying and Quantifying GaN Devices for Power Applications

Qualifying and Quantifying GaN Devices for Power Applications

It’s okay to start using gallium-nitride (GaN) devices in your new designs. GaN transistors have become extremely popular in recent years. These wide-bandgap devices have been replacing LDMOS transistors in many power applications. For example, GaN devices are broadly being adopted for new RF power amplifiers used in cellular base stations, radar, satellites, and other high-frequency applications. In general, their ability to endure higher voltages and operate at frequencies well into the millimeter-wave (mmWave) range have them replacing traditional RF power transistors in most amplifier configurations.

Electronic Design
November, 2019
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Categories: Articles

EPC to Provide eGaN Power Devices in Wafer Form

EPC to Provide eGaN Power Devices in Wafer Form

Efficient Power Conversion (EPC) will provide their industry-leading gallium nitride-based power devices in wafer form for ease of power systems integration.

EL SEGUNDO, Calif.— June 2019 — EPC announces the availability of their industry-leading enhancement-mode gallium nitride (GaN) devices in wafer form for ease of integration.  EPC’s eGaN® FETs and ICs are traditionally sold as singulated chip-scale devices with solder bars or solder bumps. 

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Categories: Press Releases

Efficient Power Conversion (EPC) Expands 100 V eGaN FET Family Offering Designers Best-in-Class Performance and Cost for 48 V DC-DC Conversion

Efficient Power Conversion (EPC) Expands 100 V eGaN FET Family Offering Designers Best-in-Class Performance and Cost for 48 V DC-DC Conversion

EPC introduces 100 V, 3.8 milliohm EPC2053 eGaN® FET, joining the EPC2045, EPC2052, and EPC2051 to offer a comprehensive 100 V family of GaN transistors that are more efficient, smaller, and lower cost for high performance 48 V DC-DC conversion.

EL SEGUNDO, Calif. — April 2019 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs advances the performance capability while lowering the cost of off-the-shelf gallium nitride transistors with the introduction of the EPC2053 (3.8 mΩ, 100 V) eGaN FET.

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Categories: Press Releases

EPC Introduces 100 V eGaN Power Transistor for 48 V DC-DC, Motor Drives, and Lidar Applications

EPC Introduces 100 V eGaN Power Transistor for 48 V DC-DC, Motor Drives, and Lidar Applications

The EPC2052 offers power systems designers a 100 V, 13.5 mΩ, power transistor capable of 74 A pulsed in an extremely small chip-scale package.  In a 48 V – 12 V DC-DC Power Converters these new generation eGaN FETs achieved greater than 97% efficiency at 500 kHz and greater than 96% Efficiency at 1 MHz

EL SEGUNDO, Calif. — March 2019 — Efficient Power Conversion (EPC) announces the EPC2052, a 100 V GaN transistor with a maximum RDS(on) of 13.5mΩ and a 74 A pulsed output current for high efficiency power conversion in a tiny 2.25mm2 footprint.

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Categories: Press Releases

Comparison of Silicon Versus Gallium Nitride FETs for the Use in Power Inverters for Brushless DC Servo Motors

Since the Robotics and Mechatronics Institute is highly interested in the improvement of sensor and power electronics, we used the opportunity of this new robot development to evaluate the new enhancement mode Gallium Nitride FET technology from EPC and compare it with our up to this time best inverter design.

Bodo’s Power Systems
By Robin Gruber, German Aerospace Center (DLR)
March, 2014

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