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In this inaugural episode, guests are Alex Lidow, CEO of Efficient Power Conversion Corp., and Dinesh Ramanathan, co-CEO of NexGen Power Systems. EPC and NexGen both have expertise with gallium nitride technology and GaN power devices. EETimes speaks with both about the technology and about the market for GaN power devices.
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EPC proudly announces the induction of Dr. Alex Lidow, CEO and co-founder into the ISPSD Hall of Fame 2019
El Segundo, Calif. – May 2019 – Efficient Power Conversion (EPC) Corporation proudly announces that Dr. Alex Lidow, CEO and co-founder, is inducted into the ISPSD Hall of Fame 2019. This prestigious honor is bestowed upon an honored contributor to advancing power semiconductor technology and sustaining the success of ISPSD. This Hall of Fame award was announced on May 20th, 2019 at 31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) 2019 at the Marriott Parkview Hotel, Shanghai, China.
Last week, Anker debuted a tiny new power brick, crediting its small size with the component it uses instead of silicon: gallium nitride (GaN). It’s the latest example of the growing popularity of this transparent, glass-like material that could one day unseat silicon and cut energy use worldwide.
Ashlee Vance at Bloomberg Business profiles EPC. Silicon has enjoyed some serious staying power. For going on 60 years, it’s been the semiconductor of choice at the heart of transistors—the tiny switches that power the Information Age. A valley has been named after it. Many billion-dollar empires have been forged from it. And now—look away, silicon—it may finally be on the verge of being replaced.
Yole Développement is releasing, this week, the "GaN-on-Si Substrate Technology and Market for LED and Power Electronics" report. Analysts believe that GaN-on-silicon technology will be widely adopted by power electronics applications. The power electronics market addresses applications such as AC to DC or DC to AC conversion, which is always associated with substantial energy losses that increase with higher power and operating frequencies. Incumbent silicon based technology is reaching its limit and it is difficult to meet higher requirements.