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GaN technology is developing rapidly with frequent releases of new generations of discrete devices that become the platform for new generations of more efficient, smaller, and lower cost integrated circuits. GaN integrated circuits make products smaller, faster, more efficient, and easier to design.
Power Systems Design
March, 2021 (page 36)
EPC’s ePower™ Stage EPC2152 Integrated Circuit has been selected as a finalist in the Semiconductor Product of the Year – Analogue category, in this year’s Elektra Awards. These prestigious annual awards have been running for over 19 years to reward and recognize companies and individuals for their excellent performance, innovation and contribution to the global electronics industry.
Companies are invited to enter individual categories and must demonstrate how innovative their product is, how it addresses its intended application better than incumbent products and what additional applications or markets could be opened-up. Judging is carried out by an independently and unbiased, diverse, and knowledgeable panel of industry experts. Due to the current COVID restrictions the Elektra Awards ceremony this year will be held virtually on 25th March and the winners announced during the event.
EPC2100 GaN power transistor single-chip half-bridge products honored with award for innovative advancement in discrete semiconductors.
EL SEGUNDO, Calif — January 2015 — Efficient Power Conversion Corporation’s (EPC) enhancement-mode gallium nitride on silicon (eGaN®) monolithic half-bridge power transistor products have been honored with an Electronic Products’ Product of the Year award.
EPC9016 development board features 40 V, 33 A enhancement mode gallium nitride (eGaN®) FETs in parallel operation increasing current capability by 67% and optimum layout techniques maximize efficiency.
EL SEGUNDO, Calif.— April, 2014 — Efficient Power Conversion Corporation (EPC) introduces the EPC9016 half-bridge development board for high current, high step-down voltage, buck Intermediate Bus Converter (IBC) applications using eGaN FETs. In this application two low-side (synchronous rectifier) field effect transistors (FETs) are connected in parallel since they will be conducting for a much longer period compared to the single high side (control) FET.
eGaN FETs have superior current sharing capability compared to silicon MOSFETs, making them ideal for parallel operation. This development board expands upon EPC’s work on optimal layout based on ultra-low inductance packages. The optimum layout techniques used increase efficiency while reducing voltage overshoot and EMI.
The EPC9016 development board is a 40 V maximum device voltage, 33 A maximum output current, half-bridge and featuring the EPC2015 eGaN FET with an onboard LM5113 gate driver. The half-bridge configuration contains a single topside device and two parallel bottom devices and is recommended for high step-down ratio buck converter applications such as point-of-load converters and buck converters for non-isolated telecom infrastructure.
The development board is 2” x 1.5” and contains all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation.
A Quick Start Guide, http://epc-co.com/epc/Products/DemoBoards/EPC9016.aspx, is included with the EPC9016 development board for reference and ease of use.
EPC9016 development boards are priced at $130 each and are available for immediate delivery from Digi-Key at http://www.digikey.com/suppliers/us/efficient-power-conversion.page?&lang=en
Design Information and Support for eGaN FETs:
EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converte
This column evaluated the ability to parallel eGaN® FETs for higher output current applications by addressing the challenges facing paralleling high speed, low parasitic devices, and demonstrated an improved paralleling technique. For experimental verification of this design method, four parallel half bridges in an optimized layout were operated as a 48 V to 12 V, 480 W, 300 kHz, 40 A buck converter, and achieved efficiencies above 96.5%, from 35% to 100% load. The design method achieved superior electrical and thermal performance compared to conventional paralleling methods and demonstrated that high speed GaN devices can be effectively paralleled for higher current operation.
By: Alex Lidow