Superior characteristics of eGaN® FETs, such as low output capacitance, low input capacitance, low parasitic inductances, and small size make them ideal for increasing efficiency in highly resonant, Rezence (A4WP) compliant, wireless power transfer systems.
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EL SEGUNDO, Calif.—July 2014 — Efficient Power Conversion Corporation (EPC) today announces the immediate availability of a complete demonstration wireless power transfer kit. The 40 V (EPC9111) or 100 V (EPC9112) wireless kits have three components:
- Source (or amplifier) board
- Class 3 A4WP compliant source (or transmit) coil
- Category 3 A4WP compliant device (or receiving) board including coil
The system is capable of delivering up to 35 W into a DC load while operating at 6.78 MHz (the lowest ISM band). The purpose of this demonstration kit is to simplify the evaluation process of using eGaN FETs for highly efficient wireless power transfer. The EPC9111 and EPC9112 utilize the high frequency switching capability of EPC gallium nitride transistors to facilitate wireless power systems with greater than 75% efficiency.
Value of eGaN FETs in Wireless Power Transfer Systems
The requirements of wireless energy transfer systems include high efficiency, low profile, robustness to changing operating conditions and, in some cases, light weight. These requirements translate into designs that need to be efficient and able to operate at high switching speeds without a bulky heatsink. Furthermore the design must be able to operate over a wide range of coupling and load variations. The fast switching capability of eGaN FETs is ideal for highly resonant power transfer applications.
The popularity of highly resonant wireless power transfer is increasing rapidly, particularly for applications targeting portable device charging. The end applications are varied and evolving quickly from mobile device charging, to life-extending medical implementations, to safety-critical hazardous environments.
Source (Amplifier) Board
The source board is a highly efficient, A4WP compliant, Zero Voltage Switching (ZVS), Class-D amplifier featuring either the 40 V EPC2014 (EPC9111) or the 100 V EPC2007 (EPC9112) eGaN FET.
The source board is configured in an optional half-bridge topology (for single-ended configuration) or default full-bridge topology (for differential configuration), and include the gate driver(s) and oscillator that ensure operation of the system at 6.78 MHz.
These amplifier boards are available separately as EPC9506 and EPC9507 for evaluation in existing customer systems.
Source (Transmit) Coil