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EPC Automotive Qualified 65 V eGaN FET Enables Higher Resolution for Lidar Systems

EPC Automotive Qualified 65 V eGaN FET Enables Higher Resolution for Lidar Systems

Efficient Power Conversion (EPC) expands AEC Q101 product family with the addition of the EPC2219, 65 V gallium nitride transistor with integrated reverse gate clamp diode optimized for high resolution lidar systems.

EL SEGUNDO, Calif.— March 2021 — EPC announces successful AEC Q101 qualification of the 65 V EPC2219 designed for lidar systems in the automotive industry and other harsh environments. 

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Categories: Press Releases

GaN Is Revolutionizing Motor Drive Applications

GaN Is Revolutionizing Motor Drive Applications

In last month’s Safety & Compliance column in How2Power, “WBG Semiconductors Pose Safety And EMI Challenges In Motor Drive Applications,”[1]Kevin Parmenter made some assertions about the difficulties of using SiC, and to a lesser extent GaN, power semiconductors in large motor-drive applications. This commentary is a response to that article, showing that GaN can be a game changer in low-voltage integrated motors.

How2Power
February, 2021
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Categories: Articles

Efficient Power Conversion (EPC) Lends Support to “The Little Box Challenge” presented by Google and IEEE to Build a (Much) Smaller Power Inverter

eGaN® power transistors are available to help contestants in their design of extremely small power inverters in their attempt to win the “Little Box Challenge” presented by Google and IEEE, an open competition to build a (much) smaller power inverter.

To tweet this news, copy and paste http://bit.ly/EPCLBC to your Twitter handle with #LittleBoxChallenge

EL SEGUNDO, Calif.—July 2014 — Efficient Power Conversion Corporation (EPC) announces its support for contestants in “Little Box Challenge” presented by Google and IEEE. Little Box Challenge, with a $1,000,000 prize, is an open competition to build a (much) smaller power inverter. eGaN® FETs are ideal for this type of application due to their high power handling capability, ultra fast switching speeds, and small size.

Why Little Box Challenge?

The objective of Little Box Challenge is to create a smaller, cheaper, power inverter for use in solar power systems. The inverter is the part of the system that converts the DC power from the solar cells into the AC power that is compatible with the established power grid infrastructure. Reducing the cost of the inverter will have a significant impact on the overall system cost of solar power.

Why Use eGaN Power Transistors?

  • High Efficiency/Low Losses
    eGaN FET’s switching performance enables higher switching frequency compared to MOSFET solutions. Higher frequency reduces the size of energy storage elements which dominate inverter size.
  • Ultra Fast Switching Speed
    eGaN FETs’ small size and lateral structure give extremely low capacitance and zero QRR. Also, the Land Grid Array (LGA) package gives low inductance. These attributes enable unprecedented switching performance -- two to three times that of a MOSFET. Switching speed is the key to increasing switching frequency efficiently.
  • Small Size
    Gallium nitride (GaN) is a wide band gap device with superior conductivity compared to traditional MOSFET technology, resulting in smaller devices and lower capacitance for the same on resistance (RDS(on)).

Contestant Support

EPC is excited to be a supporter of this contest. If your team is interested in exploring the possibility of using EPC’s eGaN® FETs in a high power density inverter for the Little Box Challenge presented by Google and IEEE, visit us at http://epc-co.com/epc/LittleBoxChallenge.aspx.

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, solar micro inverters, remote sensing technology (LiDAR), and Read more

Categories: Press Releases
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