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Efficient Power Conversion (EPC) Introduces Monolithic Gallium Nitride Power Transistor Half Bridge Enabling over 97% System Efficiency for a 48 V to 12 V Point of Load Converter at 22 A Output

Efficient Power Conversion (EPC) Introduces Monolithic Gallium Nitride Power Transistor Half Bridge Enabling over 97% System Efficiency for a 48 V to 12 V Point of Load Converter at 22 A Output
With the new 100 V EPC2104 eGaN®half bridge, a system efficiency of a complete buck converter using the EPC2104 is greater than 97% at 22 A switching at 300 kHz, and approaching 97% at 22 A when switching at 500 kHz, achieved when converting from 48 V to 12 V. EL SEGUNDO, Calif. — April 2015 — EPC announces the EPC2104, 100 V enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN® power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated, resulting in a 50% reduction in board area occupied by the ... Read more
Categories: Press Releases

Efficient Power Conversion (EPC) Introduces Monolithic Gallium Nitride Power Transistor Half Bridge Enabling over 97% System Efficiency for a 48 V to 12 V Buck Converter at 20 A Output

Efficient Power Conversion (EPC) Introduces Monolithic Gallium Nitride Power Transistor Half Bridge Enabling over 97% System Efficiency for a 48 V to 12 V Buck Converter at 20 A Output

Efficient Power Conversion introduces the EPC2102, 60 V and EPC2103, 80 V half bridges, expanding its award winning family of gallium nitride power transistor products.

EL SEGUNDO, Calif. — January 2014 — EPC announces the EPC2102, 60 V and the , 80 V enhancement-mode monolithic GaN transistor half bridges.

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Categories: Press Releases

Efficient Power Conversion Corporation’s (EPC) Monolithic Half-Bridge eGaN Transistor Family Named Product of the Year by Electronic Products Magazine

Efficient Power Conversion Corporation’s (EPC) Monolithic Half-Bridge eGaN Transistor Family Named Product of the Year by Electronic Products Magazine
EPC2100 GaN power transistor single-chip half-bridge products honored with award for innovative advancement in discrete semiconductors. EL SEGUNDO, Calif — January 2015 — Efficient Power Conversion Corporation’s (EPC) enhancement-mode gallium nitride on silicon (eGaN®) monolithic half-bridge power transistor products have been honored with an Electronic Products’ Product of the Year award. The editors of Electronic Products — a leading trade publication for electronic design engineers — evaluated thousands of products launched in 2014. The ... Read more
Categories: Press Releases

Efficient Power Conversion (EPC) Introduces Monolithic Gallium Nitride Power Transistor Half Bridge enabling over 87% System Efficiency for a 28 V to 1 V Point of Load Converter at 14 A output.

The EPC2101 GaN power monolithic half bridge offers power systems designers a solution that increases efficiency and power density. For a complete buck converter, system efficiency approaches 87% at 14 A, and over 82% at 30 A when switching at 500 kHz and converting from 28 V to 1 V while reducing the board area occupied by transistors by 50% when compared to a discrete solution. EL SEGUNDO, Calif. — November 2014 — EPC announces the EPC2101, 60 V enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN® power FETs into a single device, ... Read more
Categories: Press Releases

Efficient Power Conversion (EPC) Introduces Monolithic Gallium Nitride Half Bridge enabling 48 V to 12 V System Efficiency at 20 A output over 97%

EPC2105 GaN half bridge offers power systems designers a solution that increases efficiency and power density for complete buck converter systems approaching 98% at 10 A when switching at 300 kHz and converting from 48 V to 12 V, and 84% at 14 A when switching at 300 kHz and converting from 48 V to 1.0 V. EL SEGUNDO, Calif. — November 2014 — EPC announces the EPC2105, 80 V enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN® power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated. ... Read more
Categories: Press Releases

Efficient Power Conversion (EPC) Introduces Monolithic Gallium Nitride Power Transistor Half Bridge enabling 12 V to 1.2 V Point of Load System Efficiency at 25 A output over 90%

EPC2100 GaN power transistor offers power systems designers a solution that increases efficiency and power density for complete buck converter systems approaching 93% at 10 A, and over 90.5% at 25 A when switching at 500 kHz and converting from 12 V to 1.2 V. EL SEGUNDO, Calif. — September 2014 — EPC announces the EPC2100, the first commercially available enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated. This increases both ... Read more
Categories: Press Releases
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