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IEEE Power Electronics Society (PELS) Webinar: “Getting the Most from GaN Transistor and IC Chip-scale Packaging”

IEEE Power Electronics Society (PELS) Webinar: “Getting the Most from GaN Transistor and IC Chip-scale Packaging”

On November 3rd, IEEE PELS will offer a webinar by Alex Lidow and Michael de Rooij discussing the design and PCB manufacturing methods for using chip-scale packaged GaN power devices.

EL SEGUNDO, Calif.— October 2016 — Efficient Power Conversion Corporation (EPC) experts on the design and use of gallium nitride transistors will conduct a one-hour webinar sponsored by the IEEE Power Electronics Society (PELS) on November 3rd from 11:00 AM to 12:00 PM (EDT).

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Categories: Press Releases

A dialogue focusing on wireless power transfer application using gallium nitride devices

A dialogue focusing on wireless power transfer application using gallium nitride devices

The latest gallium nitride technology has been propelling the development of wireless power transfer application. This is especially of interest to engineers at the time just after the merger of A4WP and PMA. The interview extensively covers various areas of interests in answering the question of wider adoption of GaN devices by the semiconductor industry including differentiations of GaN devices, lowering of costs, latest device innovations, high-frequency plus small-size device operations, heat management, how GaN’s markets would surpass silicon’s markets and the future development of gallium nitride technology.

Power System Design China
June 24, 2015
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Categories: Articles

eGaN FETs Yield High Broad Load Range Wireless Energy Transfer Efficiency

eGaN FETs Yield High Broad Load Range Wireless Energy Transfer Efficiency

eGaN® FETs have previously demonstrated higher efficiency in loosely coupled wireless power transfer solutions when operating on-resonance using either ZVS Class D or Class E amplifiers. Practical Wireless Power systems however need to address the convenience factor of such systems, which results in reflected coil impedances that can significantly deviate from resonance as load and coupling vary. These systems still need to deliver power to the load and hence the amplifier needs to drive the coils over a wide impedance range. Standards such as the A4WP class 3 have defined a broad coil impedance range that address the convenience factor and can be used as a starting point to compare the performance of the amplifiers. In this installment both the ZVS Class D and Class E amplifiers will be tested at 6.78 MHz to the A4WP class 3 standard with a reduced impedance range to determine the inherent operating range limits. Factors such as device temperature and voltage limits will determine the bounds of the load impedance range each amplifier is capable of driving.

Bodos China
June, 2015
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Categories: Articles

Efficient Power Conversion Gallium Nitride (GaN) Experts Release Second Edition Textbook with Power Conversion Applications Focus

GaN Transistors for Efficient Power Conversion” textbook provides both theory and applications for gallium nitride transistors.

EL SEGUNDO, CA – October 2014 – Efficient Power Conversion Corporation (EPC) announce the publication of the second edition of “GaN Transistors for Efficient Power Conversion,” a textbook written by power conversion industry experts and published by John Wiley and Sons.

This textbook is designed to provide power system design engineering students, as well as practicing engineers, basic technical and application-focused information on how to design more efficient power conversion systems using gallium nitride-based transistors.

Gallium nitride (GaN) is an emerging technology that promises to displace the venerable silicon MOSFETs in the next generation of power transistors. As silicon approaches its performance limits, GaN devices offer superior conductivity and switching characteristics, allowing designers to greatly reduce system power losses, size, weight, and cost.

This timely second edition has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. This book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are

  • Discussions on the fundamental physics of these power semiconductors
  • Layout and other circuit design considerations
  • Application examples employing GaN including RF envelope tracking, wireless power transfer class-D audio and harsh radiation environments
  • Specific design techniques when employing GaN devices

According to Dr. Fred C. Lee, Director, Center for Power Electronics Systems at Virginia Tech, “This book is a gift to power electronics engineers. It offers a comprehensive view, from device physics, characteristics, and modeling to device and circuit layout considerations and gate drive design, with design considerations for both hard switching and soft switching. Additionally, it further illustrates the utilization of GaN in a wide range of emerging applications.”

GaN Transistors for Efficient Power Conversion” is published by John Wiley and Sons and is available for immediate purchase at Amazon (www.amazon.com).

About the Authors

Collectively, the authors have over ninety-years of experience working in power transistor design and applications. All four authors have doctorates in scientific disciplines and are widely recognized published authors. They are pioneers in the emerging GaN transistor technology, with Dr. Alex Lidow concentrating on transistor process design and Drs. Johan Strydom, Michael DeRooij, and David Reusch focusing on power transistor applications.

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, Read more

Categories: Press Releases
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