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Efficient Power Conversion (EPC) has successfully completed automotive AEC Q101 qualification for two gallium nitride devices.
EL SEGUNDO, Calif.— May 2018 — EPC announces successful AEC Q101 qualification of two eGaN® devices, opening a range of applications in automotive and other harsh environments. The products, EPC2202 and EPC2203, are both discrete transistors in wafer level chip-scale packaging (WLCS) with 80 VDS ratings and will soon be followed with several more discrete transistors and integrated circuits designed for the harsh automotive ...
EPC2049 GaN power transistor offers power systems designers a 40 V, 5 mΩ power transistor about 8 times smaller than equivalently rated silicon MOSFETs for point of load converters, LiDAR, and low inductance motor drive.
EL SEGUNDO, Calif. — December 2017 — EPC announces the EPC2049 power transistor for use in applications including point of load converters, LiDAR, envelope tracking power supplies, class-D audio, and low inductance motor drives. The EPC2049 has a voltage rating of 40 V and maximum RDS(on) of 5 mΩ with a 175 A pulsed output current.
With the current maturity of Class-D audio amplifier architectures, amplifier fidelity and efficiency limitations are primarily at the device level. Silicon MOSFETs have been evolving for almost forty years, and their progress towards a perfect switch has slowed dramatically. There are some fundamental characteristics of MOSFETs that degrade sound quality and efficiency. In 2010, the enhancement mode Gallium nitride (GaN) power FET was introduced by Efficient Power Conversion (EPC), providing a large step towards the perfect switch.
Audio Engineering Society
May 11, 2017
Produced by industry experts, Efficient Power Conversion has posted six videos showing active end-use applications such as a wireless power tabletop, high performance LiDAR, single-stage 48 V – 1.8 V DC-DC conversion, and precision motor drive control using gallium nitride transistors and integrated circuits.
EL SEGUNDO, Calif. – April 2017 – Efficient Power Conversion Corporation (www.epc-co.com) has created and posted to its website six short videos presenting end-customer applications using eGaN® FETs and ICs. These videos show how GaN technology is changing the ...
EPC introduces EPC2045 and EPC2047 eGaN® FETs that are half the size of prior generation eGaN transistors with significantly higher performance.
EL SEGUNDO, Calif. — March 2017 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs and ICs advances the performance capability while lowering the cost of off-the-shelf gallium nitride transistors with the introduction of the EPC2045 (7 mΩ, 100 V) and the EPC2047 (10 mΩ, 200 V) eGaN FETs. Applications for the EPC2045 include single stage 48 V to ...
Class A has been the serious audiophile's gold standard for decades. Today however, we are at the early stages of a seismic shift towards widespread Class D audiophile adoption. Why? Because a new type of Class D audio is quickly approaching the performance of Class A, with benefits not enjoyed by the reigning incumbent. A new transistor technology called Gallium Nitride (GaN) is poised to uproot the high-end audio world. In fact, GaN-based Class D is much more power-efficient than traditional, MOSFET-based Class D and offers orders of magnitude better performance.
GaN-based FETs are disrupting the power conversion market and are displacing silicon-based metal–oxide–semiconductor field-effect transistors (MOSFETs). Compared to MOSFETs, GaN FETs operate much faster and have higher switching speeds in the smallest possible volume. The promise of GaN is that it can dramatically reduce the size and weight of any power supply. To reach their performance potential, these high-performance GaN transistors need an optimized gate driver.
July 12, 2016
EPC2106 GaN power transistor offers power systems designers a solution that switches over 2 MHz resulting in no interference with the AM band, reducing costs for filtering, thus making it ideal for low distortion Class-D audio.
EL SEGUNDO, Calif. — August 2015 — EPC announces the EPC2106, an enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN® power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated. This increases both efficiency (especially at higher frequencies) and power density, ...
EPC9106 Class-D audio amplifier reference design, using high frequency switching gallium nitride power transistors, demonstrates efficiency enhancement, size reduction and eliminates need for a heat sink while delivering prosumer quality sound.
EL SEGUNDO, Calif. — February 2015 — Efficient Power Conversion Corporation (EPC) introduces the EPC9106, a reference design for a 150 W, 8 ohm Class-D audio amplifier.
Technics is back. Panasonic has unveiled the first new hi-fi products from the highly-regarded brand in 6 years. The new Reference Class system is made up of three components – a stereo power amp, a network audio control player and a speaker system. The amp uses a JENO Digital Engine to eliminate jitter and nip noise in the bud, and Load Adaptive Phase Calibration (LAPC) for flat amplitude-phase frequency delivery. It features GaN for high speed switching while keeping signal loss low, a proprietary digital link input, analog XLR input, analog RCA input, bi-wiring speaker terminals, ...
The quality of sound reproduced by an audio amplifier, measured by critical performance parameters such as THD (Total Harmonic Distortion), damping factor (DF), and T-IMD (Inter-modulation Distortion), is influenced by the characteristics of the switching transistors used. Class-D audio amplifiers typically use power MOSFETs, however, lower conduction losses, faster switching speed, and zero reverse recovery losses provided by enhancement-mode GaN (eGaN) FETs enable a significant increase in the sonic quality, and higher efficiency that can eliminate heatsinks. The result is a system with ...
Enhancement-mode gallium nitride transistors have been commercially available for over four years and have infiltrated many applications previously monopolized by the aging silicon power MOSFET. There are many benefits derived from the latest generation eGaN® FETs in new emerging applications such as highly resonant wireless power transfer, RF envelope tracking, and class-D audio. This article will examine the rapidly evolving trend of conversion from power MOSFETs to gallium nitride transistors in these new applications.
By: Alex Lidow
EPC9106 Class D audio amplifier reference design, using high frequency switching gallium nitride power transistors, demonstrates efficiency enhancement, size reduction and eliminates need for a heat sink while delivering prosumer quality sound.
EL SEGUNDO, Calif. — November 2013 — Efficient Power Conversion Corporation (EPC) introduces the EPC9106, a reference design for a 150 W, 8 Ω Class D audio amplifier. This demonstration board uses a Bridge-Tied-Load (BTL) design, composed of four ground-referenced half-bridge output stages, which allows scalability and expandability ...