News

Sign up today to get the latest news and updates from EPC on new product announcements, applications work, and much more. Sign up for EPC email updates or text "EPC" to 22828.

The 48 V Revolution: Why GaN Plus Digital Control for Ultra-thin Laptops

The 48 V Revolution: Why GaN Plus Digital Control for Ultra-thin Laptops

This article discusses how GaN-based solutions coupled with digital control increase efficiency, shrink the size, and reduce system costs for high density computing applications like ultra-thin laptops and high-end gaming systems. As computers, displays, smartphones and other consumer electronics systems become thinner and more powerful over the past decade, there is increasing demand for addressing the challenge of thinner solutions while extracting more power out of limited space. To address this challenge, the comparative advantages of various non-isolated DC-DC step-down topologies for ultra-thin 48 V – 20 V power solutions that are designed to fit inside a notebook computer or an ultra-thin display are examined.

Power Electronics News
January, 2021
Read article

Read more
Categories: Articles

EPC Releases Physics-Based Models That Project eGaN Device Lifetime in New Reliability Report

EPC Releases Physics-Based Models That Project eGaN Device Lifetime in New Reliability Report

Efficient Power Conversion (EPC) publishes Phase-12 Reliability Report adding to the extensive knowledge found in their first eleven reports. With this report, EPC demonstrates field experience of 226 billion eGaN ® device hours and a robustness capability unmatched by silicon power devices.

EL SEGUNDO, Calif.— January 2021 — EPC announces its Phase-12 Reliability Report, documenting the strategy used to achieve a remarkable field reliability record. eGaN devices have been in volume production for more than eleven years and have demonstrated very high reliability in over 226 billion hours of operation, most of which are in vehicles, LTE base stations, and satellites, to name just a few applications with rigorous operating conditions.

Read more
Categories: Press Releases

Layout Considerations for GaN Transistor Circuits

Layout Considerations for GaN Transistor Circuits

Gallium nitride (GaN) transistors have been in mass production for over 10 years. In their first few years of availability, the fast switching speed of the new devices – up to 10 times faster than the venerable Si MOSFET – was the main reason for designers to use GaN FETs. As the pricing of GaN devices normalized with the MOSFET, coupled with the expansion of a broad range of devices with different voltage ratings and power handling capabilities, much wider acceptance was realized in mainstream applications such as DC-DC converters for computers, motor drives for robots, and e-mobility bikes and scooters. The experience gained from the early adopters has led the way for later entrants into the GaN world get into production faster. This article is the first in a series of articles discussing three topics that can help power systems designers achieve the most out of their GaN-based designs at the lowest cost. The three topics are: (1) layout considerations; (2) thermal design for maximum power handling; and, (3) EMI reduction techniques for lowest cost.

Bodo’s Power Systems
January, 2021
Read article

Read more
Categories: Articles

Intrinsic Failure Mechanisms in GaN-on-Si Power Transistors

Intrinsic Failure Mechanisms in GaN-on-Si Power Transistors

Standard qualification testing for semiconductors typically involves stressing devices at-or-near the limits specified in their data sheets for a prolonged period of time, or for a certain number of cycles. The goal of qualification testing is to have zero failures out of a large group of parts tested. By testing parts to the point of failure, an understanding of the amount of margin between the data sheet limits can be developed, but more importantly, an understanding of the intrinsic failure mechanisms of the semiconductor can be found.

IEEE Power Electronics Magazine
December, 2020
Read article

Read more
Categories: Articles

GaN Reliability Testing Beyond AEC for Automotive Lidar

GaN Reliability Testing Beyond AEC for Automotive Lidar

An automotive application using GaN power devices in high volume is lidar(light detection and ranging) for autonomous vehicles. Lidar technology provides information about a vehicle’s surroundings, thus requiring high accuracy and reliability to ensure safety and performance. This article will discus a novel testing mechanism developed by EPC to test eGaN devices beyond the qualification requirements of the Automotive Electronics Council (AEC) for the specific use case of lidar.

Power Systems Design
December, 2020
Read article

Read more
Categories: Articles

Efficient Power Conversion (EPC) Launches 40 V eGaN FET Ideal for High Power Density Solutions for USB-C Battery Chargers and Ultra-thin Point-of-Load Converters

Efficient Power Conversion (EPC) Launches 40 V eGaN FET Ideal for High Power Density Solutions for USB-C Battery Chargers and Ultra-thin Point-of-Load Converters

EPC introduces the 40 V, 3 milliohm EPC2055 eGaN® FET, offering designers a device that is smaller, more efficient, and more reliable than currently available devices for high performance, space-constrained applications.

EL SEGUNDO, Calif. — December 2020 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, advances the performance capability of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2055 (3 mΩ, 40 V) eGaN FET. 

Read more
Categories: Press Releases

EPC Launches 300 W Bidirectional 16th Brick for High-Density Computing and Data Centers Powered by Gallium Nitride (GaN) Integrated Power Stage

EPC Launches 300 W Bidirectional 16th Brick for High-Density Computing and Data Centers Powered by Gallium Nitride (GaN) Integrated Power Stage

The EPC2152 ePower™ Stage enables higher performance and smaller solution size for high power density, low-cost DC-DC conversion demonstrated in the EPC9151 power module.

EL SEGUNDO, Calif.— December, 2020 — EPC announces the availability of the EPC9151, a 300 W bidirectional DC-DC voltage regulator in the in the very small 16th brick format which is just 33 mm x 22.9 mm (1.3 x 0.9 in). The EPC9151 power module features Microchip’s dsPIC33CK digital signal controller (DSC) with the EPC2152 ePower™ Stage integrated circuit from EPC to achieve greater than 95% efficiency in a 300 W 48 V to/from 12 V converter design.  Additional phases can be added to this scalable 2-phase design to further increase power.

Read more
Categories: Press Releases

GaN in Space Applications

GaN in Space Applications

Gallium nitride power device technology enables a new generation of power converters in space operating at higher frequencies, higher efficiencies, and greater power densities than everachievable before. GaN power devices can also exhibit superior radiation tolerance compared with Silicon MOSFETs depending upon their device design.

Power Electronics Europe
December, 2020
Read article

Read more
Categories: Articles

Efficient Power Conversion Wins ASPENCORE’s World Electronics Achievement Award as 2020 Contributor of the Year

Efficient Power Conversion Wins ASPENCORE’s World Electronics Achievement Award as 2020 Contributor of the Year

Efficient Power Conversion Corporation (EPC), the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs and ICs, has won the Contributor of the Year award of the prestigious World Electronics Achievement Awards (WEAA) 2020 for Dr. Alex Lidow, CEO and co-founder of Efficient Power Conversion.

The WEAA scheme honors products, companies and individuals that have made outstanding contributions to the innovation and development of the electronics industry worldwide. A committee comprising of ASPENCORE global senior industry analysts and online users from Asia, the US and Europe select the winners. ASPENCORE is the largest electronics industry media and SaaS group in the world featuring media titles including EE Times and EDN.

Read more
Categories: Press Releases

EPC Launches 170 V eGaN FET Offering Best-in-Class Synchronous Rectification Performance and Cost to Seize High End Server and Consumer Power Supply Applications

EPC Launches 170 V eGaN FET Offering Best-in-Class Synchronous Rectification Performance and Cost to Seize High End Server and Consumer Power Supply Applications

EPC introduces 170 V, 6.8 milliohm EPC2059 eGaN® FET, offering designers a device that is smaller, more efficient, more reliable, and lower cost than currently available devices for high performance 48 V synchronous rectification.

EL SEGUNDO, Calif. — November 2019 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, advances the performance capability while lowering the cost of off-the-shelf gallium nitride transistors with the introduction of the EPC2059 (6.8 mΩ, 170 V) eGaN FET.  This device is the latest in a family of 100 V – 200 V solutions suitable for a wide-range of power levels and price points. They are designed to meet the increasing demands of 48 V – 56 V server and data center products as well as an array of consumer power supply applications for high end computing, including gaming PCs, LCD/LED TVs, and LED lighting.

Read more
Categories: Press Releases

Efficient Power Conversion (EPC) Strengthens European Sales Team

Efficient Power Conversion (EPC) Strengthens European Sales Team

Stefan Werkstetter appointed as New Director of Sales for EMEA to focus on assisting customers in the adoption of eGaN® FETs and Integrated Circuits for applications including DC-DC, lidar, motor control, and other leading-edge power conversion systems

EL SEGUNDO, Calif. — November 2020 — To support the continued adoption of gallium nitride (GaN) FETs and Integrated Circuits in the European market, Efficient Power Conversion Corporation (EPC) is pleased to announce the appointment of Stefan Werkstetter as Director, Sales EMEA.

Read more
Categories: Press Releases

Power Conversion with GaN

Power Conversion with GaN

GaN technology has seen significant improvements and has reached an optimal cost for MOSFET replacement. Starting in 2017, the adoption rate of GaN in 48-Vin DC-DC converters began to take on important connotations in the market. Various topologies, such as multi-phase and multi-level bucks are offering new solutions with greater efficiency to cover the energy demands of the IT and automotive markets.

Power Electronics News
November, 2020
Read article

Read more
Categories: Articles

GaN ePower™ Ultrafast Switch with Integrated Gate Driver for Indirect Time-of-Flight Laser Drivers

GaN ePower™ Ultrafast Switch with Integrated Gate Driver for Indirect Time-of-Flight Laser Drivers

Gallium nitride FETs have continued to gain traction in many power electronic applications, but GaN technology is still in the early part of its life cycle. While there is much room to improve basic FET performance figures of merit an even more promising avenue is the development of GaN power ICs.

Bodo’s Power Systems
November, 2020
Read article

Read more
Categories: Articles

25 Autonomous Vehicles Influencers to Follow by 2020

25 Autonomous Vehicles Influencers to Follow by 2020

The ultimate aim of Artificial Intelligence is to provide machines the ability to operate autonomously. One such area which is projected to grow exponentially over the next decade is Autonomous Vehicles. With Artificial Intelligence coupled with the rapid advances in electronics and computer technology, the word driverless will soon take over the roads.

AI Time Journal
October, 2020
Read article

Read more
Categories: Articles

Digi-Key Electronics Partners with Efficient Power Conversion (EPC) to Host eGaN Motor Drive Webinar

Digi-Key Electronics Partners with Efficient Power Conversion (EPC) to Host eGaN Motor Drive Webinar

THIEF RIVER FALLS, Minnesota, USA – Digi-Key Electronics, the leading global electronic components distributor, announced that it has partnered with Efficient Power Conversion Corporation (EPC) to host a webinar on how to harness the power of eGaN FETS and ICs for motor drives. The webinar will take place on October 28 at 8 a.m. PST.

Register for the Harness the Power of GaN for Smaller, Lighter, More Precise Motor Drives webinar at EPC’s webinar page

Read more
Categories: Press Releases

eGaN FETs from EPC Enable Multiple 250 W, 48 V DC-DC Solutions with 98% Efficiency for Ultra-Thin, High-Density Computing

eGaN FETs from EPC Enable Multiple 250 W, 48 V DC-DC Solutions with 98% Efficiency for Ultra-Thin, High-Density Computing

Two solutions for high power density DC-DC conversion using ultra-efficient eGaN® FETs from EPC (Efficient Power Conversion) enable highly efficient solutions for ultra-thin laptops, displays, high-end gaming systems and other physically thin consumer electronics.

EL SEGUNDO, Calif.— October, 2020 — EPC announces the availability of the EPC9148 and EPC9153 demonstration boards for 48 V DC-DC conversion.  The EPC9153 is a 250 W, extremely thin, power module using a simple, low-cost synchronous buck configuration delivering a 98.2% peak efficiency with a maximum component height of 6.5 mm.  The EPC9148 utilizes a multilevel topology enabling a maximum component height less than 4 mm, while maintaining a 98% peak efficiency.

Read more
Categories: Press Releases

The Ascent of GaN: Redefining Power Conversion with GaN-on-Si Integrated Circuits

The Ascent of GaN: Redefining Power Conversion with GaN-on-Si Integrated Circuits

Discrete power transistors, whether silicon-based or GaN-on-silicon, are entering their final chapter. GaN-on-Si integrated circuits offer higher performance in a smaller footprint with significantly reduced cost and less engineering required. This article details how the ascent of GaN is redefining power conversion.

Bodo’s Power Systems
October, 2020
Read article

Read more
Categories: Articles

EPC Increases Benchmark Performance Versus Silicon MOSFETs with Latest 100 V eGaN FET Family

EPC Increases Benchmark Performance Versus Silicon MOSFETs with Latest 100 V eGaN FET Family

These new generation 100 V eGaN® FETs are ideal for 48-VOUT synchronous rectification, class-D audio, infotainment, and lidar.

EL SEGUNDO, Calif.— September, 2020 — EPC, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, advances the performance capability while lowering the cost of off-the-shelf gallium nitride transistors with the introduction of EPC2218 and EPC2204 100 V eGaN FETs.  The applications for these leading-edge devices include synchronous rectification, class-D audio, infotainment systems, DC-DC converters (hard-switched and resonant), and lidar for autonomous cars, robotics, and drones.

Read more
Categories: Press Releases
RSS
12345678