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GaN Transistor for Space Missions

GaN Transistor for Space Missions

GaN power transistors are an ideal choice for power and RF applications to support extreme space missions. Through its new eGaN® solutions, EPC Space guarantees radiation hardness performance and SEE (single-event effects) immunity, with devices that are specifically designed for critical applications in commercial satellite space. These devices have exceptionally high electron mobility and a low-temperature coefficient with very low RDS(on) values.

EETimes
July, 2020
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Thermal design for a high density GaN-based power stage

Thermal design for a high density GaN-based power stage

eGaN FETs and ICs enable very high-density power converter design, owing to their compact size, ultra-fast switching, and low on-resistance. The limiting factor for output power in most high-density converters is junction temperature, which prompts the need for more effective thermal design. The chip-scale packaging of eGaN FETs and ICs offer six-sided cooling, with effective heat extraction from the bottom, top, and sides of the die. This article presents a high-performance thermal solution to extend the output current capability of eGaN-based converters.

EDN
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EPC Introduces 100 V eGaN Power Transistor – 30 Times Smaller Than Comparable Silicon and Capable of 97% Efficiency at 500 kHz

EPC Introduces 100 V eGaN Power Transistor – 30 Times Smaller Than Comparable Silicon and Capable of 97% Efficiency at 500 kHz

The EPC2051 offers power systems designers a 100 V, 25 mΩ, power transistor capable of 37 A pulsed in an extremely small chip-scale package.  These new devices are ideal for applications such as 48V power converters, LiDAR, and LED lighting.

EL SEGUNDO, Calif. — July 2018 — Efficient Power Conversion (EPC) announces the EPC2051, a 100 V GaN transistor with a maximum RDS(on) of 25 mΩ and a 37 A pulsed output current for high efficiency power conversion in a tiny 1.1mm2 footprint.

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Efficient Power Conversion (EPC) Introduces High Frequency Monolithic Gallium Nitride Half Bridge Enabling 12 V to 1.8 V System Efficiency Over 85% at 5 MHz at 14 A Output

Efficient Power Conversion (EPC) Introduces High Frequency Monolithic Gallium Nitride Half Bridge Enabling 12 V to 1.8 V System Efficiency Over 85% at 5 MHz at 14 A Output

EPC2111 GaN half bridge offers power systems designers a solution that increases efficiency for complete overall point-of-load system applications over 85% at 14 A when switching at 5 MHz and over 80% when switching at 10 MHz and converting from 12 V to 1.8 V.

EL SEGUNDO, Calif. — June2017 — EPC announces the EPC2111, 30 V enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN® power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated.  This increases both efficiency (especially at higher frequencies) and power density, while reducing assembly costs to the end user’s power conversion system. The EPC2111 is ideal for high frequency 12 V to point-of-load DC-DC conversion.

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Getting from 48 V to load voltage

Getting from 48 V to load voltage

Improving low-voltage DC/DC converter performance with GaN transistors:
The emergence of commercially available and cost-effective gallium nitride (GaN) power transistors begins a new age in power electronics. There are significant benefits in using enhancement-mode gallium nitride FET (eGaN FET) devices in power converters for existing data center and telecommunications architectures centering around an input voltage of 48 VDC with load voltages as low as 1 VDC. High-performance GaN power transistors can enable new approaches to power data center and telecommunications systems with higher efficiency and higher power density than possible with previous Si MOSFET based architectures.

Power Systems Design
David Reusch, Ph.D., and John Glaser, Ph.D.
January, 25, 2016
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Comparison of Silicon Versus Gallium Nitride FETs for the Use in Power Inverters for Brushless DC Servo Motors

Since the Robotics and Mechatronics Institute is highly interested in the improvement of sensor and power electronics, we used the opportunity of this new robot development to evaluate the new enhancement mode Gallium Nitride FET technology from EPC and compare it with our up to this time best inverter design.

Bodo’s Power Systems
By Robin Gruber, German Aerospace Center (DLR)
March, 2014

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Package Considerations for High Frequency Power Conversion Devices

Power conversion at switching frequencies of 10 MHz and above requires both high-speed transistors and high frequency capable packaging. eGaN FETs have demonstrated their ability to improve high frequency power conversion compared with the aging power MOSFET by providing unmatched device performance as well as packaging.

Bodo’s Power Systems
Guest Editorial: Alex Lidow
November, 2013

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