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EPC partners with Würth Elektronik eiSos to present Trilogy of Wireless Power Transfer

EPC partners with Würth Elektronik eiSos to present Trilogy of Wireless Power Transfer
The "Trilogy of Wireless Power Transfer" consists of three parts: Basics Principles of Wireless Power Transmission, Wireless Power Transfer Systems and Applications. The first part of the book explains the basic physical principles and the different methods of contactless power transmission. Furthermore, the leading standards are presented in this part. The second part describes wireless power transfer systems, the different topologies of wireless power transmission, the right selection of transmitter and receiver coils required to increase efficiency, and the selection of transistors, for ... Read more
Categories: Articles

How eGaN FETs power LIDAR

How eGaN FETs power LIDAR

LIDAR is presently a subject of great interest, primarily due to its widespread adoption in autonomous navigation systems for vehicles, robots, drones, and other mobile machines. eGaN devices are one of the main factors in making affordable, high performance LIDAR possible in a small form factor thus further fueling the LIDAR revolution.

EDN
By John Glaser
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eGaN FET-Based Synchronous Rectification

eGaN FET-Based Synchronous Rectification
As GaN-on-Si becomes more common in DC-DC converter designs, questions often arise from experienced designers about the impact of the unique characteristics of GaN transistors when used as synchronous rectifiers (SRs). In particular, the third quadrant off-state characteristics, better known as “body diode” conduction in Si MOSFETs, which is activated during converter dead-time, is of interest. For this article, the focus will be on the similarities and differences of Si MOSFETs and eGaN® FETs when operated as a “body diode” and outline their relative advantages and ... Read more
Categories: Articles

Best Practices for Integrating eGaN FETs

Best Practices for Integrating eGaN FETs
Best design practices utilize the advantages offered by eGaN FETs, including printed circuit board (PCB) layout and thermal management. As GaN transistor switching charges continue to decrease, system parasitics must also be reduced to achieve maximum switching speeds and minimize parasitic ringing typical of power converters. Power Electronics Read article Read more
Categories: Articles

IEEE Power Electronics Society (PELS) Webinar: “Getting the Most from GaN Transistor and IC Chip-scale Packaging”

IEEE Power Electronics Society (PELS) Webinar: “Getting the Most from GaN Transistor and IC Chip-scale Packaging”

On November 3rd, IEEE PELS will offer a webinar by Alex Lidow and Michael de Rooij discussing the design and PCB manufacturing methods for using chip-scale packaged GaN power devices.

EL SEGUNDO, Calif.— October 2016 — Efficient Power Conversion Corporation (EPC) experts on the design and use of gallium nitride transistors will conduct a one-hour webinar sponsored by the IEEE Power Electronics Society (PELS) on November 3rd from 11:00 AM to 12:00 PM (EDT).

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Categories: Press Releases

Thoughtful Board Design Unlocks the Promise of GaN

Thoughtful Board Design Unlocks the Promise of GaN
Power transistors with faster switching speeds will enable power supplies with smaller form factors and higher energy transfer efficiencies. Indeed, the elimination of heat sinks will give designers the ability to visualize entirely new form factors for power bricks and modules, including those enabling wireless power transfers. Gallium-nitride (GaN) transistors fabricated on silicon substrates can boost efficiencies and help shrink the footprint of power supplies. Electronic Design March, 2016 Read article Read more
Categories: Articles

Radiated EMI Filter Design for an eGaN FET Based ZVS Class D Amplifier in 6.78MHz Wireless Power Transfer

Radiated EMI Filter Design for an eGaN FET Based ZVS Class D Amplifier in 6.78MHz Wireless Power Transfer

In this installment, we present a method to design a suitable EMI filter that can reduce unwanted frequencies to levels within radiated EMI specifications, and do this without negatively impacting the performance of the wireless power coil. In addition, the overall radiated EMI design aspects will also be covered.

EEWeb - Wireless & RF Magazine
Michael de Rooij, Ph.D.
February, 1, 2016
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Categories: Articles

Getting from 48 V to load voltage

Getting from 48 V to load voltage
Improving low-voltage DC/DC converter performance with GaN transistors: The emergence of commercially available and cost-effective gallium nitride (GaN) power transistors begins a new age in power electronics. There are significant benefits in using enhancement-mode gallium nitride FET (eGaN FET) devices in power converters for existing data center and telecommunications architectures centering around an input voltage of 48 VDC with load voltages as low as 1 VDC. High-performance GaN power transistors can enable new approaches to power data center and telecommunications systems with ... Read more
Categories: Articles

How to get 500W in an eighth-brick converter with GaN, part 1

How to get 500W in an eighth-brick converter with GaN, part 1
DC-DC “brick” converters are familiar to many engineers, and have wide usage in telecommunications, networking, data centers, and many other applications. This is due in large part to adoption of a common footprint defined by the Distributed-power Open Standards Alliance (DOSA) and generally accepted input/output voltage ranges. These converters provide isolation and voltage step-down, and have become increasingly sophisticated, with features that enable advanced system optimization and control. EDN Network November 23, 2015 By: John Glaser Read article Read more
Categories: Articles

Efficient Power Conversion Corporation (EPC) Publishes DC-DC Conversion Handbook, a Practical Guide to Taking Full Advantage of the Superior Performance of Gallium Nitride (GaN) Transistors

Efficient Power Conversion Corporation (EPC) Publishes DC-DC Conversion Handbook, a Practical Guide to Taking Full Advantage of the Superior Performance of Gallium Nitride (GaN) Transistors
EPC’s DC-DC Conversion handbook is a guide showing how to achieve increased efficiency and power density in Datacom equipment and other power conversion applications using GaN power transistors. EL SEGUNDO, Calif. – September 2015 – The demand for information is growing at unprecedented rates and society’s insatiable appetite for communication, computing and downloading, is driving this demand. With emerging technologies, such as, cloud computing and the internet of things, not to mention the 300 hours of video being loaded to YouTube every minute, this trend for ... Read more
Categories: Press Releases

Practical Layout Techniques to Fully Extract the Benefits of eGaN FETs

Practical Layout Techniques to Fully Extract the Benefits of eGaN FETs
The trend for electronics is to continually push towards miniaturization while increasing performance. With silicon MOSFET technology fast approaching its theoretical limit, enhancement mode gallium nitride (eGaN®) FETs from EPC have emerged to offer a step change improvement in power FET switching performance, enabling next generation power density possibilities by decreasing size and boosting efficiency. This article will explore the recommended layout techniques required to fully extract the benefits of EPC’s eGaN FETs. By: Ivan Chan & David Reusch, Ph.D. EEWeb ... Read more
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