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Efficient Power Conversion (EPC) has successfully completed automotive AEC Q101 qualification for EPC2202 and EPC2203 gallium nitride devices, opening a range of applications in automotive and other harsh environments.
EL SEGUNDO, Calif — September 13th, 2018 — Efficient Power Conversion Corporation’s AEC Q101-qualified EPC2202 and EPC2203 have been honored with an Electronic Products China / 21iC Media’s “Top 10 Power Products – Technology Breakthrough Award.” The award presentation was announced on September 13th, 2018 in Beijing, China during 21iC Power Conference 2018.
Spirit's Marti McCurdy and EPC's CEO Alex Lidow discuss the performance and cost benefits of gallium nitride over silicon and how leading companies the world over work with EPC to develop their next gen technologies with the power of GaN.
Alex Lidow and his team of Michael de Rooij, David Reusch, and John Glaser gave an excellent technical tutorial this morning to a packed audience of Professional Engineers (PEs). The topic was a very timely ‘Maximizing GaN FET and IC performance: Not just a drop-in replacement of MOSFETs’.
Nextbigfuture interviewed Alex Lidow, CEO of EPC. EPC is a leader in Gallium Nitride electronics and now is leading the charge to a new age of wireless power. In 5 to 10 years, we could begin to see entire houses or office buildings switching from costly wiring of buildings to a complete large area wireless solution.
September 9, 2017
EPC will exhibit more than 20 demonstrations showing how GaN technology’s superior performance is changing the way we live and company experts will deliver six technical presentations on GaN FET technology at APEC® 2016, the premier global event in applied power electronics
EL SEGUNDO, Calif. — March, 2016 — The EPC team will be presenting six technical presentations on gallium nitride (GaN) technology and applications at APEC 2016 in Long Beach, California from March 20th through the 24th. In addition, the company will feature its latest eGaN® FETs and IC’s as well as their customers’ end products that are enabled by eGaN technology. Demonstrations will include wireless power systems that span the full power range of Qi and AirFuel standards and a multi-mode solution, a single stage 48 V – 1 V DC-DC converter, 3-D real-time LiDAR imaging camera, and an LTE compatible envelope tracking supply in booth #2244.
The future is clear, but, when that future is going to happen and who is going to benefit? That's not clear. I think the adoption rate is anybody's guess.
Investors Business Daily
November 17, 2015
By: Allison Gatlin
Silicon, the stuff upon which the Valley was built, is maxing out. The future, according to some, belongs to gallium nitride. What is it, and what does it mean?
The combination of lower on-resistance, faster switching speeds, lower thermal impedance, and smaller physical size of eGaN FETs continues to raise the bar for power transistor performance. As GaN technology matures, not only does the performance of these transistors rapidly improve, but significant reductions in cost are also realized. Not only will GaN devices continue to enable new applications, they will replace silicon power transistors in cost-sensitive applications as well. As a matter of fact, the first signs of this happening are already here.
Power Systems Design
By: Johan Strydom, Ph.D.
September 26, 2015