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Data center power in 2019

Data center power in 2019

It is expected that there will be more than 175 zettabytes of data by 2025. Data center construction and deployment, as well as upgrading efforts in existing older ones, is booming with the advent of 5G, starting in earnest at the 2020 Olympics in Japan (6G is already being discussed for future development) and the growth of artificial intelligence (AI) and machine learning (ML).

It makes so much sense to me that GaN should be the power transistor of choice in Data Center power architectures where size, efficiency and speed are critical. In all the topologies with 48 VIN, the highest efficiency was achieved with GaN devices.

EDN
June 2019
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Categories: Articles

Thermal design for a high density GaN-based power stage

Thermal design for a high density GaN-based power stage

eGaN FETs and ICs enable very high-density power converter design, owing to their compact size, ultra-fast switching, and low on-resistance. The limiting factor for output power in most high-density converters is junction temperature, which prompts the need for more effective thermal design. The chip-scale packaging of eGaN FETs and ICs offer six-sided cooling, with effective heat extraction from the bottom, top, and sides of the die. This article presents a high-performance thermal solution to extend the output current capability of eGaN-based converters.

EDN
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Categories: Articles

DesignCon 2016 book signing with engineering icons

DesignCon 2016 book signing with engineering icons

Some of the best minds in our industry, like the group that was at a DesignCon 2016 book signing. Among them was Michael de Rooij, Efficient Power Conversion VP of Application Engineering who signed copies of his book Wireless Power Handbook, Second Edition. DesignCon attendees enjoyed browsing and buying books and having the authors autograph them as well. The authors also answered questions and discussed their areas of expertise with inquiring minds in attendance.

EDN Network
January 22, 2016
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Categories: Articles

Efficient Power Conversion Corporation (EPC) Market Leading eGaN Power Transistors Recognized as EDN Magazine Hot 100 Product for 2015

Efficient Power Conversion Corporation (EPC) Market Leading eGaN Power Transistors Recognized as EDN Magazine Hot 100 Product for 2015

Recognized as an EDN Magazine Hot 100 Product for 2015, EPC2035/36 low-priced gallium nitride FETs give better performance, smaller size, and lower cost than an equivalent silicon solution. This is the third time in 5 years that EPC’s eGaN technology has been recognized as a HOT 100.

EL SEGUNDO, Calif. — December 2015 — Efficient Power Conversion Corporation, (www.epc-co.com) the leader in enhancement mode gallium nitride FET technology, announces that its EPC2035 (60 V) and EPC2036 (100 V) high frequency, low-priced eGaN FETs have been recognized with inclusion in the EDN list of 100 Hot Products for 2015.

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Categories: Press Releases
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