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Thermal design for a high density GaN-based power stage

Thermal design for a high density GaN-based power stage
eGaN FETs and ICs enable very high-density power converter design, owing to their compact size, ultra-fast switching, and low on-resistance. The limiting factor for output power in most high-density converters is junction temperature, which prompts the need for more effective thermal design. The chip-scale packaging of eGaN FETs and ICs offer six-sided cooling, with effective heat extraction from the bottom, top, and sides of the die. This article presents a high-performance thermal solution to extend the output current capability of eGaN-based converters. EDN Read article Read more
Categories: Articles

DesignCon 2016 book signing with engineering icons

DesignCon 2016 book signing with engineering icons
Some of the best minds in our industry, like the group that was at a DesignCon 2016 book signing. Among them was Michael de Rooij, Efficient Power Conversion VP of Application Engineering who signed copies of his book Wireless Power Handbook, Second Edition. DesignCon attendees enjoyed browsing and buying books and having the authors autograph them as well. The authors also answered questions and discussed their areas of expertise with inquiring minds in attendance. EDN Network January 22, 2016 Read article Read more
Categories: Articles

Efficient Power Conversion Corporation (EPC) Market Leading eGaN Power Transistors Recognized as EDN Magazine Hot 100 Product for 2015

Efficient Power Conversion Corporation (EPC) Market Leading eGaN Power Transistors Recognized as EDN Magazine Hot 100 Product for 2015
Recognized as an EDN Magazine Hot 100 Product for 2015, EPC2035/36 low-priced gallium nitride FETs give better performance, smaller size, and lower cost than an equivalent silicon solution. This is the third time in 5 years that EPC’s eGaN technology has been recognized as a HOT 100. EL SEGUNDO, Calif. — December 2015 — Efficient Power Conversion Corporation, (www.epc-co.com) the leader in enhancement mode gallium nitride FET technology, announces that its EPC2035 (60 V) and EPC2036 (100 V) high frequency, low-priced eGaN FETs have been recognized with inclusion in the ... Read more
Categories: Press Releases
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