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EPC: Ahead of the Pack

EPC: Ahead of the Pack

EPC's chief executive, Alex Lidow, believes his GaN devices now beat silicon on performance and price, reports Rebecca Pool.

For EPC chief executive, Alex Lidow, this year's PCIM Europe 2019 has been all about applications. Presenting myriad enhanced-mode GaN FETs and ICs in end-products, the company is making a big play for 48 V DC-DC power conversion in advanced computing and automotives.

Compound Semiconductor
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Evaluation of measurement techniques for high speed GaN transistors

Evaluation of measurement techniques for high speed GaN transistors

The increase in switching speed offered by GaN transistors requires good measurement technology, as well as good techniques to capture important details of high-speed waveforms. This article focuses on how to leverage the measurement equipment for the user’s requirement and measurement techniques to accurately evaluate high performance GaN transistors. The article also evaluates high bandwidth differential probes for use with non-ground-referenced waveforms.

EDN Network
By Suvankar Biswas , David Reusch & Michael de Rooij
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15 MHz Half-Bridge Development Boards Use EPC's eGaN FETs and High Frequency Synchronous Bootstrap Topology

15 MHz Half-Bridge Development Boards Use EPC's eGaN FETs and High Frequency Synchronous Bootstrap Topology

EPC’s new development boards can be configured as either a buck converter or a ZVS class-D amplifier, demonstrating reduced losses at high frequency using an eGaN FET synchronous bootstrap augmented gate drive.

EL SEGUNDO, Calif.— March 2016 — Efficient Power Conversion Corporation (EPC) Introduces the EPC9066, EPC9067, and EPC9068 development boards, which are configurable to a buck converter or as a ZVS class-D amplifier. These boards provide an easy-to-use way for power systems designers to evaluate the exceptional performance of gallium nitride transistors, enabling the designers to get their products into volume production quickly. All three boards feature a zero reverse recovery (QRR) synchronous bootstrap rectifier augmented gate driver to increase efficiency at high frequency operation, up to 15 MHz. The boards can produce a maximum output of 2.7 A in the buck and ZVS class-D amplifier configurations. Loss reduction is realized across the entire current range.

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Categories: Press Releases

Efficient Power Conversion (EPC) Introduces Wide-Input, 20 Amp GaN-Based Buck Converter Demonstration Board for Telecom, Industrial, and Medical Applications

Efficient Power Conversion (EPC) Introduces Wide-Input, 20 Amp GaN-Based Buck Converter Demonstration Board for Telecom, Industrial, and Medical Applications

EPC9118 demonstrates size reduction and efficiency enhancement for power conversion readily achieved using high frequency switching eGaN® FETs for supply voltages up to 48 V or more.

EL SEGUNDO, Calif.—October 2014 — Efficient Power Conversion Corporation (EPC) introduces the EPC9118, a fully functional buck power conversion demonstration circuit. This board is a 30 V-60 V input to 5 V, 20 A maximum output current, 400 kHz buck converter. It features the EPC2001 and EPC2015 enhancement-mode (eGaN®) field effect transistors (FETs), as well as the LTC3891 buck controller. This buck converter design is ideal for distributed power solutions in telecom, industrial, and medical applications.

The EPC9118 board contains the complete power stage (including eGaN FETs, driver, inductor and input/output caps) in a compact 1” x 1.3” layout to showcase the performance that can be achieved using the eGaN FETs and a traditional MOSFET controller together. The EPC9118 demonstration board is 2.5” square and contains a fully closed loop buck converter with optimized control loop.

Despite its small size, the board has peak power efficiency greater than 93% capable of delivering 20 amps at 5 volts with a 36 V input. To assist the design engineer, the EPC9118 demonstration board is easy to set up and contains various probe points to facilitate simple waveform measurement and efficiency calculation.

A Quick Start Guide containing set up procedures, circuit diagram, performance curves and a bill of material is available at http://epc-co.com/epc/Products/DemoBoards/EPC9118.aspx

EPC9118 demo boards are priced at $237.19 each and are available for immediate delivery from Digi-Key at http://www.digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en

Design Information and Support for eGaN FETs:

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and Read more

Categories: Press Releases

Efficient Power Conversion (EPC) Introduces 96% Efficient, 1 MHz Buck Converter Demonstration Board Featuring eGaN FETs

EPC9107 demonstrates size reduction and efficiency enhancement for power conversion achieved using high frequency switching eGaN power transistors

EL SEGUNDO, Calif.—June, 2013 — Efficient Power Conversion Corporation (EPC) introduces the EPC9107, a fully functional buck power conversion demonstration circuit.  This board is a 9 V-28 V input to 3.3 V, 15 A maximum output current, 1MHz buck converter.  It uses the EPC2015< eGaN FET in conjunction with the LM5113 100V half-bridge gate driver from Texas Instruments. The EPC9107 demonstrates the reduced size and performance capabilities of high switching frequency eGaN FETs when coupled with this dedicated eGaN driver.

The EPC9107 demonstration board is 3” square and contains a fully closed-loop buck converter with optimized control loop. The complete power stage including eGaN FETs, driver, inductor and input/output caps is in an ultra compact 0.5” x 0.5” layout to showcase the performance that can be achieved using the eGaN FETs with the LM5113 eGaN driver.

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Categories: Press Releases

The eGaN FET-Silicon Power Shoot-Out: Part 2 – Drivers, Layout

eGaN FETs differ from silicon MOSFETs in part because of their significantly faster switching speeds. In the second article of this series, we explore the different requirements for gate drive, layout, and thermal management.

By Johan Strydom PHD, Director of Application Engineering, EPC
Power Electronics Technology
January 1, 2011

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