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The EPC2052 offers power systems designers a 100 V, 13.5 mΩ, power transistor capable of 74 A pulsed in an extremely small chip-scale package. In a 48 V – 12 V DC-DC Power Converters these new generation eGaN FETs achieved greater than 97% efficiency at 500 kHz and greater than 96% Efficiency at 1 MHz
EL SEGUNDO, Calif. — March 2019 — Efficient Power Conversion (EPC) announces the EPC2052, a 100 V GaN transistor with a maximum RDS(on) of 13.5mΩ and a 74 A pulsed output current for high efficiency power conversion in a tiny 2.25mm2 footprint.
As part of its continuous support to a widening customer base for DC-DC, LiDAR, wireless power applications and beyond, EPC continues its innovation journey by meeting with engineers in key industry exhibitions worldwide in March and April 2019.
EL SEGUNDO, Calif. - March 2019 — EPC experts are available to meet with innovative engineers interested in incorporating GaN into their designs at key industry exhibitions worldwide in March and April 2019.
EPC2112 and EPC2115 GaN-based monolithic integrated solutions offer power systems designers the ability to increase efficiency in an extremely small size.
EL SEGUNDO, Calif. — March 2018 — Efficient Power Conversion Corporation (EPC) announces the EPC2112 and EPC2115 enhancement-mode monolithic GaN power transistor with integrated driver products. The EPC2112 is a 200 V, 40-mΩ eGaN® FET plus integrated gate driver. In comparison, the EPC2115 is an integrated circuit with dual 150 V, 70-mΩ eGaN FETs plus gate drivers. Both products are capable of operating up to 7 MHz and ...
To ensure widespread adoption, wireless power systems need to move beyond small charging pads and become active power sources over large surface areas. For magnetic resonant systems, this demands fundamental changes in coil technology, system architecture, and power amplifiers. Gallium nitride based amplifiers have proven capable of delivering 60 W with greater than 90 percent efficiency into the transmit coil over a wide load range.
By: Yuanzhe Zhang and Michael A. de Rooij
Power Electronics Europe
Alex Lidow, CEO of Efficient Power Conversion, talks to Leo Laporte about Gallium Nitride, and how it is being used to create the next generation of microchips and wirelessly power the world.
This Week in Technology
The EPC9086 high efficiency half-bridge development board can operate up to 10 MHz featuring a 30 V EPC2111 eGaN® half bridge in combination with the recently introduced high speed Peregrine Semiconductor PE29102 gate driver.
EL SEGUNDO, Calif.—October 2017 — Efficient Power Conversion Corporation (EPC) today announces the availability of The EPC9086 development board, a high efficiency half-bridge development board that can operate up to 10 MHz. The EPC9086 board measures 2” x 2” and contains a 30 V, 15 A EPC2111 enhancement-mode gallium nitride half ...
MIGVAN now represents EPC’s Israel sales, marketing, and technical support to assist customers in adopting eGaN® FETs and ICs for leading-edge power conversion systems using gallium nitride
EL SEGUNDO, Calif.— October 2017 — To support its accelerating growth throughout Israel, Efficient Power Conversion Corporation (EPC) is proud to announce the appointment of MIGVAN as its sales, marketing, and technical support representative. MIGVAN Technologies & Engineering Ltd, founded in 1988, is devoted to promoting and selling advanced technology electronic ...
Taking advantage of the high performance of eGaN® FETs, Rompower Energy Systems has announced a reference design for a tiny, 65 W, 94% efficient AC/DC power adaptor for laptops and other mobile devices.
TUCSON, Az. – June 2017 – Rompower Energy Systems, an internationally recognized research and development company in the field of power conversion, announces the availability of technology for an extremely small, highly efficient AC/DC power adapter. In the quest for higher power density, the efficiency of the adapter is critical in order to decrease the heat dissipation. ...
EPC introduces EPC2045 and EPC2047 eGaN® FETs that are half the size of prior generation eGaN transistors with significantly higher performance.
EL SEGUNDO, Calif. — March 2017 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs and ICs advances the performance capability while lowering the cost of off-the-shelf gallium nitride transistors with the introduction of the EPC2045 (7 mΩ, 100 V) and the EPC2047 (10 mΩ, 200 V) eGaN FETs. Applications for the EPC2045 include single stage 48 V to ...
Wireless power transfer (WPT) technology is destined, in the very near future, to rock the electrics and electrical world we live in. Eric Giler, now president of WiTricity, an MIT spinoff, gave an excellent TED presentation in 2009 entitled, "A demo of wireless electricity." In this demonstration, Giler powered a small TV via wireless power transfer—that was 2009. We have come a long way since then; please read on for a technical glimpse into this amazing field (pun intended) of opportunity for designers.
January 26, 2017