Sign up today to get the latest news and updates from EPC on new product announcements, applications work, and much more. Sign up for EPC email updates or text "EPC" to 22828.
These new generation eGaN® FETs address the new needs of the eMobility, delivery and logistic robot, and drone markets for compact BLDC motor drives and cost-effective high-resolution Time of Flight.
EL SEGUNDO, Calif.— June, 2021 — EPC, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, advances the performance capability while lowering the cost for off-the-shelf gallium nitride transistors with the introduction of EPC2065 and EPC2054
Efficient Power Conversion (EPC) announces the expansion of its new gallium nitride (GaN) integrated circuit (IC) product family offering higher performance and smaller solution size for time-of-flight (ToF) lidar applications including robotics, drones, 3D sensing, gaming, and autonomous cars.
EL SEGUNDO, Calif.— March 2021 — EPC announces the introduction of a laser driver that integrates a 40 V, 10 A FET with a gate driver and low-voltage differential signaling (LVDS) logic level input in a single chip for time-of-flight lidar systems used in robotics, drones, augmented reality, and gaming applications.
The ultra-fast transition EPC2034C eGaN® FETs used on the EPC9150 enables high current pulses up to 220 A and pulse widths under 3 ns, thus allowing a lidar system to see farther, faster, and better.
EL SEGUNDO, Calif.— March 2021 — Efficient Power Conversion (EPC) announces the availability of the EPC9150, a 200 V, high current, pulsed-laser diode driver demonstration board. In a lidar system, used to create 3-D maps for autonomous vehicle applications, speed and accuracy of object detection is critical. As demonstrated by this board, the rapid transition capability of the EPC2034C eGaN FETs provide power pulses to drive the laser diodes, VCSELs or LEDs up to ten times faster than an equivalent MOSFET and in a small fraction of the area, energy, and cost. Thus, enhancing the overall performance, including accuracy, precision, and processing speed as well as the price of a lidar system.
Efficient Power Conversion (EPC) introduces the first of a new gallium nitride (GaN) integrated circuit (IC) product family offering higher performance and smaller solution size for time-of-flight (ToF) lidar applications including robotics, drones, 3D sensing, and autonomous cars.
EL SEGUNDO, Calif.— February 2021 — EPC announces the introduction of a laser driver that integrates a 40 V, 10 A FET with integrated gate driver and 3.3 logic level input in a single chip for time-of-flight lidar systems used in robotics, surveillance systems, drones, autonomous cars, and vacuum cleaners.
Join gallium nitride (GaN) technology experts in the EPC virtual booth at CES to explore how GaN enables enhanced features and performance in consumer electronics by providing higher efficiency, smaller size, and lower cost semiconductor FET and IC solutions.
EL SEGUNDO, Calif. — January 2021 — Efficient Power Conversion (EPC) announced that it will demonstrate the power of eGaN® technology to boost performance in game-changing consumer applications including self-driving cars, emobility, drones, robots, and 48-volt power conversion at the All-Digital Consumer Electronics Show (CES) January 11th through the 14th.
GaN is making possible what was once thought to be impossible in many industries. Alex Lidow, EPC, explains how GaN technology is contributing to significant improvements in medicine.
EPC2046 GaN power transistor offers power systems designers a 200 V, 25 mΩ power transistor about 12 times smaller than equivalently rated silicon MOSFETs for wireless power, multi-level AC-DC power supplies, robotics, and solar micro inverters.
EL SEGUNDO, Calif. — May 2017 — EPC announces the EPC2046 power transistor for use in applications including wireless power, multi-level AC-DC power supplies, robotics, solar micro inverters, and low inductance motor drives. The EPC2046 has a voltage rating of 200 V and maximum RDS(on) of 25 mΩ with a 55 A pulsed output current.