Sign up today to get the latest news and updates from EPC on new product announcements, applications work, and much more. Sign up for EPC email updates or text "EPC" to 22828.
Three years ago, the cost of making medium voltage eGaN FETs fell below the cost of equivalently rated power MOSFETs. At that time EPC decided to use the performance and cost advantages of eGaN FETs to aggressively pursue applications with input, or output, voltage around 48 V. Specifically, automotive and computer applications is where 48 V conversion is becoming the new architecture, the new standard for power systems.
Power Systems Design
March 31, 2020
The EPC2050 offers power systems designers a 350 V, 65 mΩ, 26 A power transistor in an extremely small chip-scale package. These new devices are ideal for applications such as multi-level converters, EV charging, solar power inverters, and motor drives.
EL SEGUNDO, Calif. — April 2018 — Efficient Power Conversion announces the EPC2050, a 350 V GaN transistor with a maximum RDS(on) of 65 mΩ and a 26 A pulsed output current. Applications include EV charging, solar power inverters, motor drives, and multi-level converter configurations, such as a 3-level, 400 V input to 48 V output LLC converter for telecom or server power supplies.