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For over four decades, power management efficiency and cost have improved steadily as innovations in power MOSFET structures, technology, and circuit topologies have kept pace with the growing need for electrical power. In the new millennium, however, the rate of improvement has slowed dramatically as the silicon power MOSFET approaches its theoretical bounds. At the same time, a new material, gallium nitride (GaN) is steadily progressing on its journey toward a theoretical performance boundary that is 6,000 times better than the aging silicon MOSFET and 300 times better than the best GaN products on the market today.
Silicon power MOSFETs have not kept pace with the evolutionary changes in the power electronics industry where factors such as efficiency, power density, and smaller form factors are the main demands of the community. The power electronics industry has seen the theoretical limit of silicon MOSFETs reached and now needs to move to a new element. Gallium Nitride or GaN is a highly mobile semiconductor electron semiconductor (HEMT) that is proving to be a real added value in meeting new applications.
Power Electronics News
March 25, 2020
Efficient Power Conversion (EPC,) in partnership with Spirit Electronics, will provide manufacturing lot-specific data services for their industry-leading gallium nitride-based power devices.
EL SEGUNDO, Calif.— June 2019 — EPC announces a partnership with Spirit Electronics to provide an expanded range of manufacturing lot-specific data services for their industry-leading enhancement-mode gallium nitride (GaN) devices.
Efficient Power Conversion (EPC) has recently introduced two new, 100V, GaN devices that are able to handle 48V server and automotive needs. I will be examining the 48V server power solutions to the processor as well as in automotive and energy storage systems (See my article Bi-directional DC/DC power supplies: Which way do we go?) bi-directional supplies, in an EDN exclusive article coming up in the near future. GaN power transistors MUST be a part of these kinds of architectures; from my point-of-view there is no better alternative.
The EPC2052 offers power systems designers a 100 V, 13.5 mΩ, power transistor capable of 74 A pulsed in an extremely small chip-scale package. In a 48 V – 12 V DC-DC Power Converters these new generation eGaN FETs achieved greater than 97% efficiency at 500 kHz and greater than 96% Efficiency at 1 MHz
EL SEGUNDO, Calif. — March 2019 — Efficient Power Conversion (EPC) announces the EPC2052, a 100 V GaN transistor with a maximum RDS(on) of 13.5mΩ and a 74 A pulsed output current for high efficiency power conversion in a tiny 2.25mm2 footprint.
EPC will exhibit live demonstrations showing how GaN technology’s superior performance is transforming power delivery for entire industries including computing, communications, and automotive.
EL SEGUNDO, Calif. — March 2019 — The EPC team will be delivering eleven technical presentations on gallium nitride (GaN) technology and applications at APEC 2019 in Anaheim, California from March 17th through the 21st. In addition, the company will demonstrate its latest eGaN FETs and ICs in customers’ end products that are enabled by eGaN technology.
As part of its expansion to support a widening customer base for DC-DC, LiDAR, wireless power applications and beyond, Efficient Power Conversion Corporation has expanded its Asia-based team with new members who are in close proximity to customers in 21 regions throughout Asia Pacific.
EL SEGUNDO, Calif. — November 28, 2018 — To support its accelerating sales growth in Asia, Efficient Power Conversion Corporation (EPC) is proud to announce the expansion of the sales and FAE team in Asia Pacific to support its expanding customer base, maximize new business acquisition and capture new market opportunities.