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Efficient Power Conversion (EPC) Meeting with Engineers at Key Industry Exhibitions Continuing the Journey to Unleash the Power of GaN

Efficient Power Conversion (EPC) Meeting with Engineers at Key Industry Exhibitions Continuing the Journey to Unleash the Power of GaN

As part of its continuous support to a widening customer base for DC-DC, LiDAR, wireless power applications and beyond, EPC continues its innovation journey by meeting with engineers in key industry exhibitions worldwide in March and April 2019.

EL SEGUNDO, Calif. - March 2019 — EPC experts are available to meet with innovative engineers interested in incorporating GaN into their designs at key industry exhibitions worldwide in March and April 2019.

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Categories: Press Releases

Powering graphics processors from a 48-V bus

Powering graphics processors from a 48-V bus
New converter topologies and power transistors promise to reduce the size and boost the efficiency of supplies that will run next-generation Artificial Intelligence (AI) platforms. In all the topologies with 48 VIN, the highest efficiency comes with using GaN devices. This is due to their lower capacitance and smaller size. With recent pricing declines in GaN power transistors, the cost comparison with silicon-based converters now strongly favors GaN in all the leading-edge solutions. Power Electronic Tips March, 2019 Read article Read more
Categories: Articles

The Power and Evolution of GaN, Part 6: GaN Technology Adoption and Roadmap

The Power and Evolution of GaN, Part 6: GaN Technology Adoption and Roadmap
In the final installment of this series, how GaN has met the requirements to displace silicon is explored. As the adoption rate of GaN explodes, it is important to remember that, while GaN has made many advancements in just a few short years, it is still far from its theoretical performance limitations and thus there are profound improvements that can continue to be achieved. In time, the performance and cost advantages of GaN-on-silicon will result in a majority of applications currently using silicon-based devices converting to the smaller, faster, cheaper, and more reliable GaN ... Read more
Categories: Articles

The Power and Evolution of GaN, Part 5: Building a Low Cost, High Efficiency 12 V to 1 V POL Converter with eGaN FETs and ICs

The Power and Evolution of GaN, Part 5: Building a Low Cost, High Efficiency 12 V to 1 V POL Converter with eGaN FETs and ICs
As an example of the contribution to performance GaN devices can make to one of these mainstream applications, a traditional silicon application, the 12 V – 1 V point-of-load (POL) DC/DC converter will be examined. An eGaN IC based 12 V to 1 V, 12 A load converter yielding a peak efficiency of 78% at 5 MHz with a power density of at least 1000 W/in3, all with a cost below $0.20 per watt will be shown Power Systems Design January, 2019 Read article Read more
Categories: Articles
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