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Just like life’s reality, when the aged leaves the center stage for the younger ones, Silicon is taking the bow. The advent and adoption of Gallium Nitride (GaN) have succeeded in gradually easing out the old reliable Silicon. For over four decades, power management efficiency and cost have improved steadily as innovations in power MOSFET structures, technology, and circuit topologies have kept pace with the growing need for electrical power. In the new millennium, however, the rate of improvement has slowed dramatically as the silicon power MOSFET approaches its theoretical bounds. At the same time, the new material, GaN is steadily progressing on its journey toward a theoretical performance boundary that is 6,000 times better than the aging silicon MOSFET and 300 times better than the best GaN products on the market today.
July 16, 2020
Beyond just performance and cost improvement, the most significant opportunity for GaN technology to impact the power conversion market comes from its intrinsic ability to integrate multiple devices on the same substrate. GaN technology, as opposed to standard silicon IC technology, allows designers to implement monolithic power systems on a single chip in a more straightforward and cost-effective way.
Bodo’s Power Systems
Efficient Power Conversion (EPC) introduces the first of a new integrated circuit (IC) product family offering higher performance and smaller solution size for high power density applications including DC-DC conversion, motor drive, and Class-D audio.
EL SEGUNDO, Calif.— March 2020 — EPC announces the introduction of an 80 V, 12.5 A power stage integrated circuit designed for 48 V DC-DC conversion used in high-density computing applications and in motor drives for e-mobility.