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EPC Introduces a 12 V – 48 V 500 W GaN Boost Converter Demonstration with Same BOM Size as Silicon, Offering Superior Efficiency and Power Density

EPC Introduces a 12 V – 48 V 500 W GaN Boost Converter Demonstration with Same BOM Size as Silicon, Offering Superior Efficiency and Power Density

The combination of the Renesas two-phase synchronous GaN boost controller with ultra-efficient eGaN® FETs from EPC (Efficient Power Conversion) enables high power density and low-cost DC-DC conversion.

EL SEGUNDO, Calif.—  January, 2022 — EPC announces the availability of the EPC9166, a 500 W DC-DC demo board that converts a 12 V input to 48 V output. The EPC9166 demo board demonstrates the Renesas ISL81807 80 V two-phase synchronous boost controller with the latest generation EPC2218 eGaN FETs from EPC to achieve greater than 96.5% efficiency in a 12 V input to 48 V regulated output conversion with 500 kHz switching frequency.  The output voltage can be configured to 36 V, 48 V, and 60 V. The board can deliver 480 W power without a heatsink.

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Categories: Press Releases

40 V eGaN FET Ideal for High Power Density Telecom, Netcom, and Computing Solutions Now Available from EPC

40 V eGaN FET Ideal for High Power Density Telecom, Netcom, and Computing Solutions Now Available from EPC

EPC introduces the 40 V, 1.3 milliohm EPC2067 eGaN® FET offering designers a device that is smaller, more efficient, and more reliable than MOSFETs for high-performance, space-constrained applications.

EL SEGUNDO, Calif. — October 2021 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, expands the selection of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2067 (1.3 mΩ typical, 40 V) eGaN FET. 

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Categories: Press Releases

Efficient Power Conversion (EPC) Expands 40 V eGaN FET Product Line with Device Ideal for High Power Density Telecom, Netcom, and Computing Solutions

Efficient Power Conversion (EPC) Expands 40 V eGaN FET Product Line with Device Ideal for High Power Density Telecom, Netcom, and Computing Solutions

EPC introduces the 40 V, 1.6 milliohm EPC2069 eGaN® FET, offering designers a device that is smaller, more efficient, and more reliable than currently available devices for high performance, space-constrained applications.

EL SEGUNDO, Calif. — September 2021 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, advances the performance capability of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2069 (1.6 mΩ typical, 40 V) eGaN FET. 

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Categories: Press Releases

EPC’s 1 kW, 48 V to 12 V LLC Power Conversion Demonstration Board Delivers Best-in-Class Power Density of 1226 W/in3

EPC’s 1 kW, 48 V to 12 V LLC Power Conversion Demonstration Board Delivers Best-in-Class Power Density of 1226 W/in3

Delivering the power of a quarter brick in the size of an eighth brick, the EPC9149 uses eGaN® FETs switching at 1 MHz for extreme power density to deliver 1 kW of power.

EL SEGUNDO, Calif.— May, 2021 — EPC announces the availability of the EPC9149, a 1 kW-capable 48 V input to 12 V output LLC converter that operates as a DC transformer with a conversion ratio of 4:1. This demonstration board features the 100V EPC2218 and 40 V EPC2024 GaN FETs.

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Categories: Press Releases

GaN is as Easy to Use as Silicon: EPC Introduces a 48 V to 12 V Demo Board Featuring EPC eGaN FETs and New Renesas DC-DC Controller

GaN is as Easy to Use as Silicon: EPC Introduces a 48 V to 12 V Demo Board Featuring EPC eGaN FETs and New Renesas DC-DC Controller

The combination of the Renesas dual synchronous GaN buck controller and ultra-efficient eGaN® FETs from EPC (Efficient Power Conversion) enables high power density and efficiency with the same BOM size and cost as silicon.

EL SEGUNDO, Calif.—  February, 2021 — EPC announces the availability of the EPC9157, a 300 W DC-DC demo board in the tiny 1/16th brick size, measuring just 33 mm x 22.9 mm x 9mm (1.3 x 0.9 x 0.35 in). The EPC9157 demo board integrates the Renesas ISL81806 80 V dual synchronous buck controller with the latest-generation EPC2218 eGaN FETs from EPC to achieve greater than 95% efficiency for 48 V input to 12 V regulated output conversion at 25 A.  

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Categories: Press Releases
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