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40 V eGaN FET Ideal for High Power Density Telecom, Netcom, and Computing Solutions Now Available from EPC

40 V eGaN FET Ideal for High Power Density Telecom, Netcom, and Computing Solutions Now Available from EPC

EPC introduces the 40 V, 1.3 milliohm EPC2067 eGaN® FET offering designers a device that is smaller, more efficient, and more reliable than MOSFETs for high-performance, space-constrained applications.

EL SEGUNDO, Calif. — October 2021 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, expands the selection of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2067 (1.3 mΩ typical, 40 V) eGaN FET. 

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Categories: Press Releases

EPC’s 1 kW, 48 V to 12 V LLC Power Conversion Demonstration Board Delivers Best-in-Class Power Density of 1226 W/in3

EPC’s 1 kW, 48 V to 12 V LLC Power Conversion Demonstration Board Delivers Best-in-Class Power Density of 1226 W/in3

Delivering the power of a quarter brick in the size of an eighth brick, the EPC9149 uses eGaN® FETs switching at 1 MHz for extreme power density to deliver 1 kW of power.

EL SEGUNDO, Calif.— May, 2021 — EPC announces the availability of the EPC9149, a 1 kW-capable 48 V input to 12 V output LLC converter that operates as a DC transformer with a conversion ratio of 4:1. This demonstration board features the 100V EPC2218 and 40 V EPC2024 GaN FETs.

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Categories: Press Releases
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