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EPC CEO & Co-Founder, Alex Lidow delivers a presentation entitled, Silicon is Dead in the Ridley Engineering booth at APEC 2019.
When the issue invariably turns to the packaging of the power semiconductor – transistor, diode, or integrated circuit – the requests for improvement fall into six categories:
1. Can you make the package smaller?
2. Can you reduce the package inductance?
3. Can you make the product with lower conduction losses?
4. Can you make the package more thermally efficient?
5. Can you sell the product at a lower price?
6. Can you make the package more reliable?
With power converters demanding higher power density, transistors must be accommodated in an ever decreasing board space. Beyond gallium nitride based power transistors’ ability to improve electrical efficiency, they must also be more thermally efficient. This article evaluates the thermal performance of chip-scale packaged eGaN® FETs and compares their in-circuit electrical and thermal performance with state-of-the-art silicon MOSFETs.
Bodo’s Power Systems
David Reusch, Ph.D. and Alex Lidow, Ph.D.
June 1, 2016
Author: By Alix Paultre, Editorial Director, PSD
In this podcast friend of the show Alex Lidow, Founder and CEO of Efficient Power Conversion (EPC) and the co-inventor of the HEXFET power MOSFET, talks to Alix Paultre of Power Systems Design about the current state of the GaN marketplace and where it looks to be going. http://www.powersystemsdesign.com/paultre-on-power-alex-lidow-of-epc-on-the-state-of-the-gan-marketplace-podcast
Power conversion at switching frequencies of 10 MHz and above requires both high-speed transistors and high frequency capable packaging. eGaN FETs have demonstrated their ability to improve high frequency power conversion compared with the aging power MOSFET by providing unmatched device performance as well as packaging.
Bodo’s Power Systems
Guest Editorial: Alex Lidow
EPC's David Reusch talks about enhancement mode GaN and the package-less package that helps reduce losses.
Packaging has its downsides: It increases the footprint and the price of a power MOSFET, while degrading its performance through unwanted increases in resistance and inductance. The best solution is to ditch the package, a step that allows GaN HEMTs to be cost-competitive with silicon incumbents, argues Alex Lidow from Efficient Power Conversion Corporation.