Sign up today to get the latest news and updates from EPC on new product announcements, applications work, and much more. Sign up for EPC email updates or text "EPC" to 22828.
A roundtable discussion with GaN industry experts hosted by Bodo’s Power Systems. Guests included:
- Alex Lidow, CEO and co-founder of Efficient Power Conversion
- Doug Bailey, Vice President Marketing & Applications Engineering at Power Integrations
- Dilder Chowdhury, Director, Strategic Marketing, Power GaN Technology at Nexperia
- Tom Ribarich, Sr. Director Strategic Marketing at Navitas Semiconductor
Gallium nitride (GaN) is one of the technologies that could well displace silicon MOSFETs in the next generation of power transistors. As silicon approaches its performance limits, GaN devices conduct better and switch faster. In this short podcast, Alex Lidow talks about the differences between GaN and silicon power devices.
The first installment in a new monthly column by Alex Lidow, CEO of EPC, introduces the concept that GaN-on-silicon power devices could be a superior replacement for the aging power MOSFET.
By: Alex Lidow
Due to its advantages GaN will probably become the dominant technology. GaN has a much higher critical electric field than silicon which enables this new class of devices to withstand much greater voltage from drain to source with much less penalty in on-resistance.
By Alex Lidow, PhD
Bodo’s Power Systems
Read the article
Recent breakthroughs by EPC in processing gallium nitride (GaN) have produced enhancement-mode devices with high conductivity and hyper-fast switching, with a silicon-like cost structure and fundamental operating mechanism.
By Robert Beach, Steve Colino
April 29, 2010
Read the article