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GaN Makes a Frontal Attack on Silicon Power MOSFETS

GaN Makes a Frontal Attack on Silicon Power MOSFETS
Today’s GaN FETs are improving rapidly in size and performance. The benchmark devices are still 300 times away from their theoretical performance limits. The early GaN adopters needed the speed. Big examples were lidar systems for autonomous cars, drones, and robots, and 4G/LTE base stations. The volume has grown, and now GaN power devices are at a point where the prices are equivalent to the slower, bigger and aging power MOSFET. Thus, it is time for GaN’s frontal assault! Bodo’s Power Systems June 2019 Read article Read more
Categories: Articles

Facts Say About An Account from a Scientist: he saved the world's 15% energy consumption prior. Now, he discovers silicon's replacement material

Facts Say About An Account from a Scientist: he saved the world's 15% energy consumption prior. Now, he discovers silicon's replacement material
This scientist got his Ph.D 40 years ago who saved the world's 15% energy consumption at one time. He is continuing his journey of innovations now in discovering silicon's replacement material for humankind. My father always taught me that the true worth of an individual is measured based on their contribution to society. As I entered graduate school in 1975 I knew my passion was in the field of semiconductors, and I felt my best contribution to society would come from finding a successor to silicon. I did my graduate work in Gallium Arsenide, but realized by the time I received my ... Read more
Categories: Articles

GaN-on-Silicon Power Devices: How to Dislodge Silicon-Based Power MOSFETs

GaN-on-Silicon Power Devices: How to Dislodge Silicon-Based Power MOSFETs
Gallium nitride (GaN) power transistors designed for efficient power conversion have been in production for seven years. New markets, such as light detection and ranging, envelope tracking, and wireless charging, have emerged due to the superior switching speed of GaN. These markets have enabled GaN products to achieve significant volumes, low production costs, and an enviable reliability reputation. All of this provides adequate incentive for the more conservative design engineers in applications such as dc–dc converters, ac–dc converters, and automotive to start their evaluation process. ... Read more
Categories: Articles

Silicon Rival Stalks Apple, Google, Tesla-Facing Chip Markets

Silicon Rival Stalks Apple, Google, Tesla-Facing Chip Markets
Silicon Valley's namesake raw material faces a promising new rival: gallium nitride (GaN). Some say the newcomer is poised to swarm the $30 billion semiconductor power supply market. It's a market that involves "anything that plugs into a wall" ranging from Apple (AAPL) iPhone chargers to Tesla Motors' (TSLA) luxury electric cars. Investor's Business Daily Allison Gatlin July 2016 Read article Read more
Categories: Articles

A Silicon Pioneer Plays Taps for Silicon and Power Cords

A Silicon Pioneer Plays Taps for Silicon and Power Cords
Tuesday I was fortunate enough to have a meeting with Alex Lidow, founder of chip company EPC of El Segundo, California, and something of an luminary of the chip world. Lidow came up with the “power MOSFET,” a device that went on to be the basis of billions in semiconductor sales, in 1977. His new company, whose initials stand for “Efficient Power Conversion,” proposes replacing silicon, the original basis of the MOSFET, and one of the most prevalent types of semiconductor around, with a different material, Gallium Nitride, commonly abbreviated as GaN — or “eGaN,” as Lidow calls the ... Read more
Categories: Articles

eGaN vs. Silicon - Comparing Dead-time Losses for eGaN FETs and Silicon MOSFETs in Synchronous Rectifiers

eGaN vs. Silicon - Comparing Dead-time Losses for eGaN FETs and Silicon MOSFETs in Synchronous Rectifiers
There have been several comparisons of eGaN FETs with silicon MOSFETs in a variety of applications, including hard-switched, soft-switched, and high-frequency power conversion. These studies have shown that eGaN FETs have large efficiency and power density advantages over silicon MOSFETs. Here we’ll focus on the use of eGaN FETs in synchronous rectifier (SR) applications and the importance of dead-time management. We show that eGaN FETs can dramatically reduce loss due to dead-time in synchronous rectifiers above and beyond the benefits of low RDS(on)and charge. Power Systems ... Read more
Categories: Articles

Paultre on Power - Power GaN

Author: By Alix Paultre, Editorial Director, PSD Date: 3/12/2013 In this podcast, we talk to Alex Lidow of Efficient Power Conversion (EPC) about GaN devices and their impact on the power industry. EPC is a leader in enhancement-mode Gallium Nitride based power management devices. EPC was the first to introduce enhancement-mode Gallium-Nitride-on-Silicon (eGaN®) FETs as power MOSFET replacements in applications such as point-of-load converters, Power over Ethernet (PoE), server and computer DC-DC converters, LED lighting, cell phones, RF transmission, solar micro-inverters, and ... Read more
Categories: Interviews

Are GaN Transistors Ready for Prime Time?

Gallium Nitride transistors have been available since Eudyna and Nitronex first introduced depletion-mode RF transistors in about 2005. Since then many new companies have entered the field with both RF transistors (e.g. RFMD, Triquint, Cree, Freescale, Integra, HRL, M/A-COM, and others), and transistors designed to replace power MOSFETs in power conversion applications (e.g. Transphorm, International Rectifier, GaN Systems, microGaN, and Efficient Power Conversion). This article discusses if this ground swell of activity mean that GaN transistors are ready to replace power MOSFETs, and, if ... Read more
Categories: Articles

Market Adoption of Enhancement Mode Gallium Nitride Transistors (eGaN® FETs) - Interview at IIC 2012

Alex Lidow, the co-inventor of the HEXFET power MOSFET and CEO of Efficient Power Conversion (EPC), discusses the market adoption of Enhancement Mode Gallium Nitride Transistors (eGAN FETs) due to their tremendous size and performance advantages over silicon power MOSFETs, eGaN's “disruptive” technological impact on power semiconductor markets and potential applications, and EPC’s upcoming introduction of eGaN power devices for high voltage AC/DC converters and high power motor control applications.

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Categories: Interviews

Alex Lidow, CEO, interviewed in ECN's Tinker’s Toolbox

Alex Lidow is interviewed by ECN's Editorial Director, Alix Paultre, on the Tinker's Toolbox, ECN's audio interview website.  The interview explores the attributes of GaN technology, applications opened as a result of GaN's superior performance to MOSFETs and reasons for the take-up of eGaN FET products over the past year.

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Categories: Interviews

Alex Lidow, CEO, presents at Innovation Technology Conference

 View video of EPC's CEO, Alex Lidow as he presents "eGaN - Starting from the GaN"  at the Innovation Technology Conference in China. = 3 check for Flash plugin in plugin array var flashVer = -1; if (navigator.plugins != null && navigator.plugins.length > 0) { if (navigator.plugins["Shockwave Flash 2.0"] || navigator.plugins["Shockwave Flash"]) { var swVer2 = navigator.plugins["Shockwave Flash 2.0"] ? " 2.0" : ""; var flashDescription = navigator.plugins["Shockwave Flash" + swVer2].description; var descArray = ... Read more
Categories: Interviews

Darnell Power forum looks at GaN transistor technology

The weather was perfect in Chi-town at the Darnell Power Forum but the technologies were hot including a talk by Alex Lidow CEO of Efficient Power Conversion Corp., who discussed why the power industry should consider GaN for improving performance.

By Paul O’Shea
EEBEAT
September 14, 2010

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Categories: GaN Market News

GaN – the New Frontier for Power Conversion

Due to its advantages GaN will probably become the dominant technology. GaN has a much higher critical electric field than silicon which enables this new class of devices to withstand much greater voltage from drain to source with much less penalty in on-resistance.

By Alex Lidow, PhD
Bodo’s Power Systems
June, 2010

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Categories: Articles

Can Gallium Nitride Replace Silicon?

For the past three decades, Silicon-based power management efficiency and cost have shown steady improvement. In the last few years, however, the rate of improvement has slowed as the Silicon power MOSFET has asymptotically approached its theoretical bounds. Gallium Nitride grown on top of a silicon substrate could displace Silicon across a significant portion of the power management market. By Alex Lidow, PhD Power Electronics Europe Issue 2, 2010 Read the article Read more
Categories: Articles
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