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The Next Wave of GaN and SiC

The Next Wave of GaN and SiC

Gallium nitride and silicon carbide are designated wide-bandgap (WBG) semiconductors based on the energy required to shift electrons in these materials from the valence to the conduction band — about 3.2 eV for SiC and 3.4 eV for GaN, compared with just 1.1 eV for silicon. The WBG properties lead to a higher applicable breakdown voltage, which can reach up to 1,700 V in some applications. At this year’s digital only PCIM Europe, held in May, several companies showed their latest innovations in GaN and SiC and offered insights on where WBG technology is headed.

EE Times – Europe
July, 2021
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Categories: Articles

Characterization of Wide Bandgap Power Semiconductor Devices Published by The Institution of Engineering and Technology

Characterization of Wide Bandgap Power Semiconductor Devices Published by The Institution of Engineering and Technology

Based on the authors' years of extensive experience, this is an authoritative overview of Wide Bandgap (WBG) device characterization.

EL SEGUNDO, Calif. – September 2018 – Efficient Power Conversion Corporation (www.epc-co.com) announces the publication by the Institution of Engineering and Technology of Characterization of Wide Bandgap Power Semiconductor Devices co-authored by EPC Senior Applications Engineer, Dr. Edward A. Jones. This textbook provides essential tools to assist researchers, advanced students, and practicing engineers in performing both static and dynamic characterization of WBG devices, particularly those based on using silicon carbide (SiC) and gallium nitride (GaN) power semiconductors. The book presents practical considerations for real applications and includes examples of applying the described methodology.

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Categories: Press Releases

Si vs. GaN vs. SiC: Which process and supplier are best for my power design?

By: Steve Taranovich, EDN
March 15, 2013

As the race toward leadership in the power element continues to evolve, industry experts have said that by mid-2013 about half a dozen GaN, Si, and SiC suppliers will reveal process enhancements, new architectures, and the latest new capabilities that will bring new choices and tools to the industry. http://www.edn.com/design/power-management/4409627/1/Si-vs--GaN-vs--SiC--Which-process-and-supplier-are-best-for-my-power-design-

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Categories: GaN Market News
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