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Podium Session at PCIM Europe Marks New Chapter in GaN Power Device Adoption

Podium Session at PCIM Europe Marks New Chapter in GaN Power Device Adoption

Senior representatives GaN power manufacturers (EPC, Transphorm, GaN Systems, Infineon and Navitas) presented details of their significant developments in moving the technology into mainstream, volume applications. Based on the information presented in the five talks, there are three significant reasons to expect dramatic growth in adoption of GaN power devices.

Bodo’s Power Systems
June 1, 2016
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Categories: GaN Market News

Si vs. GaN vs. SiC: Which process and supplier are best for my power design?

By: Steve Taranovich, EDN March 15, 2013 As the race toward leadership in the power element continues to evolve, industry experts have said that by mid-2013 about half a dozen GaN, Si, and SiC suppliers will reveal process enhancements, new architectures, and the latest new capabilities that will bring new choices and tools to the industry. http://www.edn.com/design/power-management/4409627/1/Si-vs--GaN-vs--SiC--Which-process-and-supplier-are-best-for-my-power-design- Read more
Categories: GaN Market News

GaN-on-Si Based FETs Foster New Applications

Although, for the last few years, there has been a lot of talk about gallium nitride(GaN) based power transistors displacing the entrenched silicon MOSFETs, it might take some time before the emerging gallium nitride on silicon (GaN-on-Si) based power FETs enter the mainstream power conversion space. However, in the meantime, a handful of emerging applications are poised to tap the benefits of this promising power technology. Besides commercial availability with high reliability, there are a number of unique GaN characteristics that are fostering these new applications. Ashok ... Read more
Categories: GaN Market News

Accelerated development of eGaN FETs as silicon MOSFET come to the end of the road

With eGaN® FETs' high-performance capabilities, we have seen rapid adoption in applications for efficient DC/DC conversion, POL converters, Class D audio amplifier and high frequency circuits. Texas Instruments’ introduction of the industry's first 100V, half-bridge GaN FET driver (LM5113), optimized for use with enhancement-mode GaN (eGaN) field-effect transistors (FETs),has further propelled such an accelerated adoption pace in applications like high-performance telecom power supplies, networking and datacom centers. Read articles: EDN China April 2012 Print ... Read more
Categories: GaN Market News

Dedicated Driver Squeezes Optimal Performance Out Of Enhancement-Mode GaN FETs

We know Efficient Power Conversion (EPC) has commercialized enhancement-mode GaN-on-Si FETs, or eGaN FETs as EPC calls them, for more than a year now. Concurrently, it has been working with partners to realize dedicated drivers for its eGaN FETs, which offer lower RDS(ON) at higher voltages, lower gate charge, and no reverse recovery loss (QRR)—all these properties from a smaller die size than silicon. In essence, by comparison to silicon MOSFETs, the eGaN FETs offer a dramatic reduction in figures of merit or FOM. By Ashok Bindra How2Power June, 2011 Read the article Read more
Categories: GaN Market News

Darnell Power forum looks at GaN transistor technology

The weather was perfect in Chi-town at the Darnell Power Forum but the technologies were hot including a talk by Alex Lidow CEO of Efficient Power Conversion Corp., who discussed why the power industry should consider GaN for improving performance.

By Paul O’Shea
EEBEAT
September 14, 2010

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Categories: GaN Market News

GaN community grows: ex-IR CEO launches GaN-based power transistors

The enhancement mode -normally OFF- GaN technology was explicitly developed to replace power MOSFETs. Says Alex Lidow, EPC’s co-founder and CEO, enhancement mode - rather than depletion mode - is essential for GaN to become a broad-scale silicon power MOSFET replacement.

By Margery Conner
EDN
March 5, 2010

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Categories: GaN Market News

Enhancement Mode Gallium Nitride MOSFET Delivers Impressive Performance

A breakthrough in processing gallium nitride (GaN) on a silicon substrate has produced enhancement-mode FETs with high conductivity and hyperfast switching. Its cost structure and fundamental operating mechanism are similar to silicon-only MOSFET alternate.

Article By Sam Davis, Editor in Chief
Power Electronics Technology
March 1, 2010

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Categories: GaN Market News
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