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EPC Receives 2018 Top 10 Power Products Award from Electronic Products China Magazine-21iC Media

EPC Receives  2018 Top 10 Power Products Award from  Electronic Products China Magazine-21iC Media

Efficient Power Conversion (EPC) has successfully completed automotive AEC Q101 qualification for EPC2202 and EPC2203 gallium nitride devices, opening a range of applications in automotive and other harsh environments.

EL SEGUNDO, Calif — September 13th, 2018 — Efficient Power Conversion Corporation’s AEC Q101-qualified EPC2202 and EPC2203 have been honored with an Electronic Products China / 21iC Media’s “Top 10 Power Products – Technology Breakthrough Award.” The award presentation was announced on September 13th, 2018 in Beijing, China during 21iC Power Conference 2018.

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Efficient Power Conversion Corporation’s (EPC) eGaN Transistor Wins 2017 Impact Award from Electronics Component News Magazine

Efficient Power Conversion Corporation’s (EPC) eGaN Transistor Wins 2017 Impact Award from Electronics Component News Magazine

EPC2040, an eGaN® power transistor optimized for LiDAR applications, placed first in the Passive Components & Discrete Semiconductors category of ECN magazine’s prestigious 2017 Impact Award.

EL SEGUNDO, Calif — November  2017 Efficient Power Conversion Corporation’s (EPC) is proud to announce that Electronic Component News (ECN) — a leading trade publication for electronic design engineers — has awarded the EPC2040, enhancement mode gallium nitride (eGaN) transistor its ECN Impact Award for 2017 in the Passive Components and Discrete Semiconductors category.

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Efficient Power Conversion Corporation (EPC) Receives 2017 Top 10 Power Products Award from Electronic Products China Magazine/21iC Media

Efficient Power Conversion Corporation (EPC) Receives 2017 Top 10 Power Products Award from Electronic Products China Magazine/21iC Media

EPC’s latest family of eGaN® transistors and ICs takes a quantum leap in increasing Performance while reducing costs for new and existing applications currently served by MOSFETs 

EL SEGUNDO, Calif — September 2017 Efficient Power Conversion Corporation’s Gen 5 eGaN® transistor and IC family has been honored with an Electronic Products China / 21iC Media’s “Top 10 Power Products – Best Application Award.” The award presentation was announced on September 15th, 2017 in Beijing, China during 21iC Power Conference 2017.

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EPC's EPC9121 10 W Wireless Multi-mode Demonstration System Named “Top 10 Power Product – Breakthrough Technology”

EPC's  EPC9121 10 W Wireless Multi-mode Demonstration System  Named “Top 10 Power Product – Breakthrough Technology”

The superior characteristics of eGaN ® FETs and ICs enable a lower cost single transmit amplifier solution that can wirelessly charge devices regardless of the standard used in the receiving device.

EL SEGUNDO, Calif — September 2016 — Efficient Power Conversion Corporation’s (EPC) EPC9121 multi-mode wireless charging demonstration system has been honored with an Electronic Products China’s “Top 10 Power Product – Breakthrough Technology Award.” The award is a benchmark for recognizing a significant advancement in a technology or its application that leads the industry trend. The award presentation was announced on September 8th, 2016 in Beijing, China during its Power Conference.

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EPC CEO Alex Lidow Receives 2015 SEMI Award for North America

EPC CEO Alex Lidow Receives 2015 SEMI Award for North America

Award Recognizes Innovation in Power Device Technology for Enabling the Commercialization of GaN

EL SEGUNDO, Calif, — January 2016 — Today, Efficient Power Conversion (EPC) announced that its CEO Alex Lidow was selected as the recipient of the 2015 SEMI Award for North America for the innovation of power device technology, enabling the commercialization of GaN. Dr. Lidow is being honored for his work in the area of Process and Technology Integration.

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EPC received the Readers’ Choice Company of the Year award from Powerpulse.net

EPC received the Readers’ Choice Company of the Year award from Powerpulse.net

According to Powerpulse.net, “This selection is based on EPC's domination of the 50 most-read product news stories for 2015. EPC products account 8 of the top 50 product stories for 2015 (as measured by readership). This is the first time that a single company has accounted for such a large number of product news stories (that amounts to 2 per quarter), including 1 in the Top 10 and 5 in the Top 20.”

PowerPulse.net
January 4, 2016
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Efficient Power Conversion Corporation’s (EPC) Monolithic Half-Bridge eGaN Transistor Family Named Product of the Year by Electronic Products Magazine

Efficient Power Conversion Corporation’s (EPC) Monolithic Half-Bridge eGaN Transistor Family Named Product of the Year by Electronic Products Magazine

EPC2100 GaN power transistor single-chip half-bridge products honored with award for innovative advancement in discrete semiconductors.

EL SEGUNDO, Calif — January 2015 — Efficient Power Conversion Corporation’s (EPC) enhancement-mode gallium nitride on silicon (eGaN®) monolithic half-bridge power transistor products have been honored with an Electronic Products’ Product of the Year award.

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Efficient Power Conversion Corporation (EPC) Gallium Nitride Technology Receives EDN China 10th Anniversary Leading Technology Award

EPC enhancement-mode gallium nitride (eGaN®) power transistors recognized by leading industry trade journal as displacement technology for the venerable silicon MOSFET

EL SEGUNDO, Calif. – June, 2012 – Efficient Power Conversion Corporation (www.epc-co.com) has been recognized with a EDN China 10th Anniversary Innovation Award for Leading Technology in the Most Influential Technology for the Future category. The EDN China Innovation Award is a benchmark for recognizing technology, product, and company innovation by the voting of electronics design engineers and managers worldwide. The winners were selected through online voting (40%), expert judging (30%) and editor evaluation (30%). The ceremony was held in Shanghai on June 26th.

“It is encouraging to have our eGaN technology recognized by a leading industry magazine, especially since the honor was determined, in part, by practicing engineers worldwide. Power designers appreciate the fast switching speed, high efficiency, small size, and competitive cost of the enhancement-mode GaN transistor – attributes that will lead to continued displacement of the silicon MOSFET,” noted Alex Lidow, CEO, Efficient Power Conversion Corporation.

About EDN China and Innovation Award

EDN China Innovation Award 2014 received 128 product nominations in nine major categories from over 70 companies worldwide. EDN China started over twenty years ago as the first publication focusing on electronics designs and knowledge exchange in the country. It has more than 400,000 registered readers. For details, please visit website www.ednchina.com.

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, solar micro inverters, remote sensing technology (LiDAR), and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

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eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press Contact

Efficient Power Conversion Corporation Joe Engle, 310.986.0350 [email protected]

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Efficient Power Conversion Corporation (EPC) Market Leading eGaN® Power Transistors Recognized as EDN Magazine Hot 100 Product for 2013

EPC8000 family of gallium nitride FETs give power systems and RF designers access to high performance GaN power transistors capable of amplification into the low GHz range, enabling innovative designs not achievable with silicon.

EL SEGUNDO, Calif. — December 2013 — Efficient Power Conversion Corporation, (www.epc-co.com) the leader in enhancement mode gallium nitride FET technology, announces today that its EPC8000 family of high frequency eGaN FETs has been recognized with inclusion in the EDN list of 100 Hot Products for 2013.

“We are very excited that EDN, an industry-leading magazine, has recognized our innovative new family of eGaN FETs. These devices take EPC and gallium nitride transistor technology to a level of performance that enables applications that were previously beyond the capability of silicon MOSFETs. The EPC8000 eGaN FETs blur the line between power and RF transistor technology,” said Alex Lidow, EPC’s co-founder and CEO.

These third generation devices have cut new ground for power transistors with switching transition speeds in the sub nano-second range. They are capable of hard switching applications even beyond the 10MHz for which they were designed. These products exhibit very good small signal RF performance with high gain well into the low GHz range, making them a competitive choice for RF applications.

Examples of applications benefiting from the low power, compact, high frequency EPC8000 family of devices include hard-switching power converters operating in the multi-megahertz range, envelope tracking in RF power amplifiers using EPC8005, highly resonant wireless power transfer systems for wireless charging of mobile devices.

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, solar micro inverters, remote sensing technology (LiDAR), and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

Sign-up to receive EPC updates via email: http://bit.ly/EPCupdates or text "EPC" to 22828
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eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press Contact

Efficient Power Conversion Corporation Joe Engle, 310.986.0350 [email protected]

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Efficient Power Conversion Corporation (EPC) Market-leading Development Board Featuring eGaN® FETs Receives Industry Awards in China

Award winning EPC9005 development board facilitates rapid design of high frequency switching power conversion systems based on the 40 V EPC2014 eGaN FET

EL SEGUNDO, Calif. – November 2013 - Efficient Power Conversion Corporation (www.epc-co.com; www.epc-co.com.cn) announces that its EPC9005 development board has been recognized with two industry awards in China; namely, Optimized Development Award of the Top 10 Power Products Award 2013 presented by Electronics Product China and Leading Product Award of China Innovation Award 2013 presented by EDN China magazine.

“It is an honor to receive these recognitions as an industry leading product from Electronics Product China and EDN China magazine”, noted Alex Lidow, CEO, Efficient Power Conversion Corporation. “Our EPC9005 board facilitates rapid design of high frequency switching power conversion systems based on our 40 V EPC2014 eGaN FET. The EPC9005 is a ready-made and easy-to-connect development board complete with well-documented engineering support materials.”

The EPC9005 measures 2” x 1.5” and contains two EPC2014 eGaN FET in a half-bridge configuration using Texas Instruments LM5113 gate driver, supply and bypass capacitors. The board contains all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation.

For details, please visit our website with the below information:

About Electronics Product China

Electronic Products China, a leading electronics industry magazine, judges products on achievement of a significant technological advancement, an innovative design, or a substantial enhancement in price/performance. A presentation ceremony for the winners of this year’s awards took place on September 12, 2013 in Beijing during the magazine’s Power Conference.

About EDN China’s Innovation Award

EDN’s annual Innovation Awards started in the United States 23 years ago to recognize achievements in the design of ICs and related products. Today, it has developed to become one of the most prestigious awards for electronics design engineering in North America. Introduced to China in 2005 as the EDN China Innovation Awards, it has steadily grown to become one of the mainland China’s most anticipated and respected accolades for the electronics design industry, with winning products gaining wide recognition in the local market.

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as servers, wireless power tra Read more

Categories: Press Releases

EPC named a Constant Contact 2012 All Star

EPC is honored to be recognized as a 2012 All Star by Constant Contact. This status is an annual designation that only 10% of Constant Contact customers achieve. It is awarded to companies making extra efforts to engage customers. We would like to thank all who have supported us. If you are not already receiving our newsletter please join our list @ http://bit.ly/qr28tu

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EPC Wireless Power Transfer Demonstration System named a Top 10 Wireless Charging Development for 2012 by PowerPulse.Net

Wireless charging will be a fast-growing segment of the power electronics industry in 2013. Significant developments began accelerating last year. The “Top 10” developments selected by the PowerPulse editors highlight important trends in wireless charging that will continue in 2013 and beyond.

EPC announced a high efficiency wireless power demonstration system utilizing the high frequency switching capability of gallium nitride transistors. eGaN® FETs from EPC are well suited for these systems because of their ability to operate efficiently at high frequency, voltage, and power. This wireless power demonstration system jointly developed by EPC and WiTricity is a class-D power system operating at 6.78 MHz, and capable of delivering up to 15 W to a load. The purpose of this demonstration system is to simplify the evaluation process of the wireless power technology. The system includes all the critical components in a single system that can be easily connected to demonstrate the powering of a device with wireless energy transfer.

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Efficient Power Conversion Corporation (EPC) Market Leading eGaN FET Receives EDN China Innovation Leading Product Award 2012

SEGUNDO, Calif. – November, 2012 - Efficient Power Conversion Corporation (www.epc-co.com) announces that it has been recognized with a Leading Product Award by EDN China Innovation Award 2012 in its Power Device and Module category. In its eighth year, the EDN China Innovation Award 2012 is the benchmark event for recognizing product innovation by the voting of electronics design engineers and managers worldwide.

“It is an honor to receive this recognition as an industry leading product from EDN China magazine. The EPC2012 is one member of our family of eGaN FETs being adopted by customers as higher performance replacements for silicon-based MOSFETs,” noted Alex Lidow, CEO, Efficient Power Conversion Corporation.

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Efficient Power Conversion Corporation (EPC) Named to EE Times Silicon 60 List of Emerging New Technology Startups

EL SEGUNDO, Calif. – October, 2012 - Efficient Power Conversion Corporation, (www.epc-co.com) the leader in enhancement mode gallium nitride FET technology, announces today that it has been recognized with inclusion in the EE Times Silicon 60 list of 60 Emerging Startups. Companies are selected by the editorial team at EE Times based on a mix of criteria including: technology, intended market, maturity, financial position, investment profile, and executive leadership.

“It is an honor to receive this recognition from EE Times as one of the hottest emerging electronics companies and as EE Times has noted, ‘an emerging company worthy of tracking,’” commented Alex Lidow, CEO, Efficient Power Conversion Corporation.

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Efficient Power Conversion Corporation (EPC) Market Leading eGaN FET Receives Top 10 Power Products Award from Electronic Products China

Efficient Power Conversion Corporation (EPC) Market Leading eGaN® FET Receives Top 10 Power Products Award from Electronic Products China

EL SEGUNDO, Calif. – September, 2012 - Efficient Power Conversion Corporation (www.epc-co.com) announces that its EPC9102 has been recognized by Electronic Products China with a Top 10 Power Products Award – Technology Breakthrough Award.

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Efficient Power Conversion Corporation (EPC) Named to EE Times Silicon 60 List of Emerging New Technology Startups

EL SEGUNDO, Calif. – April, 2012 - Efficient Power Conversion Corporation, (www.epc-co.com) the leader in enhancement mode gallium nitride FET technology, announces today that it has been recognized with inclusion in the EE Times Silicon 60 list of 60 Emerging Startups. Companies are selected by the editorial team at EE Times based on a mix of criteria including: technology, intended market, maturity, financial position, investment profile, and executive leadership.

"It is an honor to receive this recognition from EE Times as one of the hottest emerging electronics companies and as EE Times has noted, 'an emerging company worthy of tracking,'" commented Alex Lidow, CEO, Efficient Power Conversion Corporation.

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The National LM5113 from Texas Instruments has been honored with an Electronic Products’ Product of the Year award

EL SEGUNDO, Calif-January 3, 2012 — The National LM5113 from Texas Instruments has been honored with an Electronic Products’ Product of the Year award. The editors of Electronic Products — a leading trade publication for electronic design engineers — evaluated thousands of products launched in 2011. The winning products were selected on the basis of innovative design, significant advancement in technology or application and substantial achievement in price and performance.

The LM5113 is the industry’s first driver designed specifically for enhancement mode gallium nitride FETs. Enhancement-mode GaN FETs enable new levels of efficiency and power density compared to standard metal-oxide semiconductor field-effect transistors (MOSFETs) due to their low on-resistance (Rdson) and gate charge (Qg) as well as their ultra-small footprint, but driving them reliably presented new challenges. National’s LM5113 driver integrated circuit (IC) overcomes these challenges, enabling power designers to realize the benefits of GaN FETs in a variety of popular power topologies.

"We congratulate Texas Instruments on this prestigious award," said Alex Lidow, co-founder and CEO for Efficient Power Conversion Corporation. "The release of the LM5113 bridge driver has been instrumental in accelerating the adoption of our eGaN® FETs by offering designers a true plug and play solution. The LM5113 bridge driver unlocks the efficiency capability of eGaN FETs, enabling designers to achieve new performance benchmarks in power and system density."

http://www2.electronicproducts.com/Driving_GaN_FETs_becomes_reality-article-poypo_TI_NatSemi_jan2012-html.aspx

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Efficient Power Conversion Corporation (EPC) Market Leading eGaN® FET Receives EDN China Innovation Leading Product Award

EL SEGUNDO, Calif. – December, 2011 - Efficient Power Conversion Corporation (www.epc-co.com) announces today that it has been recognized with a Leading Product Award by EDN China Innovation Award 2011 in its Power Device and Module category. In its seventh year, the EDN China Innovation Award 2011 is the benchmark event for recognizing product innovation by China’s electronics design engineers and managers.

“It is an honor to receive this recognition as an industry leading product from EDN China. The EPC2010 is one member of our family of eGaN FETs being adopted by customers as higher performance replacements for silicon-based MOSFETs,” noted Alex Lidow, CEO, Efficient Power Conversion Corporation.

EPC2010 is EPC’s second-generation 200 Volt enhancement mode gallium nitride (eGaN) power transistor with high frequency switching, enhanced performance in a lead-free, RoHS package.

The EPC2010 FET is a 200 VDS device with a maximum RDS(ON) of 25 milliohms with 5 V applied to the gate. It has an increased pulsed current rating of 60 A (compared with 40 A for the EPC1010), improved RDS(ON) at very low gate voltages, and lower capacitance.

Compared to a state-of-the-art silicon power MOSFET with similar on-resistance, the EPC2010 is smaller and has many times superior switching performance. Applications that benefit from eGaN FET performance include RF envelope tracking, wireless power transmission, high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, hard-switched and high frequency circuits.

An application note and datasheet for EPC2010 eGaN can be found at http://bit.ly/GaNgn2 and http://epc-co.com/epc/Products/eGaNFETs.aspx respectively.

About EDN China

EDN China Innovation Awards 2011 featured nine major technology categories: Power Device and Module, Embedded System, Microprocessor/DSP, Programmable Logic, Analog/Mixed Signal IC, Test & Measurement, Development Tool and Software, Passive Component and Sensor, Communications & Networking IC. Besides, the Engineers’ Most Favored Distributor was selected. EDN China started 17 years ago as the first publication focusing on electronics designs and knowledge exchange in the country. It has more than 400,000 registered readers. For details, please visit website www.ednchina.com.

 

About EPC

EPC is the leader in enhancement mode Gallium Nitride based power management devices. EPC is the first to introduce enhancement-mode Gallium-Nitride-on-Silicon (eGaN) FETs as power MOSFET replacements in applications such as servers, netbooks, notebooks, LED lighting, cell phones, base stations, micro-inverters, and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs. Visit our web site: www.epc-co.com.

eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press contact:

Efficient Power Conversion: Joe Engle tel: 310.986.0350 email: Read more

Categories: Press Releases

EPC9004 Named “Product of the Month” by Bodo’s Power Systems®

The EPC9004 has been recognized by Bodo’s Power Systems as the Product of the Month in the September, 2011 issue of the magazine. The EPC9004 facilitates rapid design of high frequency switching power conversion systems based on the 200 V EPC2012 with a ready-made, easy to connect development board.

Bodo's Power Systems
September, 2011

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Categories: GaN Market News

Efficient Power Conversion Corporation (EPC) Market Leading eGaN® Products Wins Prestigious EE Times Annual Creativity in Electronics (ACE) Award for Energy Efficiency Technology

EL SEGUNDO, Calif-May 4, 2011 — Efficient Power Conversion Corporation’s (EPC) family of enhancement-mode gallium nitride on silicon (eGaN®) power FETs has won the Energy Technology Award issued as part of the prestigious EE Times Annual Creativity in Electronics (ACE) Awards. These awards celebrate the creators of technology who demonstrate leadership and innovation in the global industry and shape the world we which we live.

“We are very proud to have won the ACE Award. This award substantiates that EPC’s enhancement-mode GaN power transistors represent a major breakthrough in power conversion technology. We believe that performance from silicon-based MOSFETs has reached the end of the road and that eGaN technology will lead the way for continued increases in performance in power management.” said Alex Lidow, EPC’s co-founder and Chief Executive Officer.

In its seventh year, the EE Times ACE Awards is a leading electronics industry recognition award selected by a panel of distinguished industry technology leaders. The awards were announced on May 3rd at an event honoring the people and companies behind the technologies that are changing the way we work, live and play. (http://www.eetimes-ace.com/home.php)

The Energy Technology Award is a new category this year recognizing those companies that have made the most significant contribution through the introduction of new concepts and products that help conserve energy or create new energy sources. EPC eGaN FETs have lower losses and higher switching frequency capabilities than power MOSFETs or IGBTs. These advantages can be applied in power conversion circuits to significantly reduce the consumption of electricity and enable greater penetration of alternative energy generation.

Spanning a range of 40 Volts to 200 Volts, and 4 milliohms to 100 milliohms, eGaN FETs demonstrate significant performance advantages over state-of-the-art silicon-based power MOSFETs. EPC’s technology produces devices that are smaller than similar resistance silicon devices and have many times superior switching performance.

Applications that benefit from this eGaN performance are DC-DC power supplies, point-of-load converters, class D audio amplifiers, notebook and netbook computers, solar microinverters, Power over Ethernet (PoE), LED drive circuits, telecom base stations, and cell phones, to name just a few.

Products based on eGaN technology are available today and are priced between $1.12 and $5.00 in 1k quantities. They are immediately available through Digi-Key Corporation at http://digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en

About EPC

EPC is the leader in enhancement mode Gallium Nitride based power management devices. EPC is the first to introduce enhancement-mode Gallium-Nitride-on-Silicon (eGaN®) FETs as power MOSFET replacements in applications such as servers, netbooks, notebooks, LED lighting, cell phones, base stations, microinverters, and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

Press contact: Joe Engle tel: 310.986.0350 email: [email protected]

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