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EPC9003 and EPC9006 demonstrate the ease of designing with eGaN FETs with ready-made, easy to connect development boards and well-documented engineering support materials.
EL SEGUNDO, Calif.—October, 2012 — Efficient Power Conversion Corporation (EPC) today announces the availability of two development boards, the EPC9003 and the EPC9006, both featuring EPC’s enhancement-mode gallium nitride (eGaN) field effect transistors (FETs). These boards demonstrate how the recent introductions of IC gate drivers, optimized for eGaN FETs, make the task of transitioning from silicon to eGaN technology simple and cost effective.
Texas Instruments Incorporated (TI) introduced a low-side gate driver for use with MOSFETs and Gallium-Nitride (GaN) power field-effect transistors (FETs) in high-density power converters. The new LM5114 drives GaN FETs and MOSFETs in low-side applications, such as synchronous rectifiers and power factor converters. Together with the LM5113, the industry's first 100-V half-bridge GaN FET driver announced in 2011, the family provides a complete isolated DC/DC conversion driver solution for high-power GaN FETs and MOSFETs used in high-performance telecom, networking and data center applications. For more information, samples and an evaluation board, visit www.ti.com/gan