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Designing An Ultra-Thin Stepdown Converter: Multiphase Vs. Multilevel

Designing An Ultra-Thin Stepdown Converter: Multiphase Vs. Multilevel

Over the past decade computers, displays, smart phones and other consumer electronics systems have become thinner while also becoming more powerful. As a result, the market continues to increase its demand for thinner power supply solutions with greater power density. This article examines the feasibility of adopting various non-isolated dc-dc stepdown topologies for an ultra-thin 48-V to 20-V, 250-W power solution.

How2Power
May, 2020
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Efficient Power Conversion (EPC) Expands 100 V eGaN FET Family Offering Designers Best-in-Class Performance and Cost for 48 V DC-DC Conversion

Efficient Power Conversion (EPC) Expands 100 V eGaN FET Family Offering Designers Best-in-Class Performance and Cost for 48 V DC-DC Conversion

EPC introduces 100 V, 3.8 milliohm EPC2053 eGaN® FET, joining the EPC2045, EPC2052, and EPC2051 to offer a comprehensive 100 V family of GaN transistors that are more efficient, smaller, and lower cost for high performance 48 V DC-DC conversion.

EL SEGUNDO, Calif. — April 2019 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs advances the performance capability while lowering the cost of off-the-shelf gallium nitride transistors with the introduction of the EPC2053 (3.8 mΩ, 100 V) eGaN FET.

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EPC Introduces 100 V eGaN Power Transistor for 48 V DC-DC, Motor Drives, and Lidar Applications

EPC Introduces 100 V eGaN Power Transistor for 48 V DC-DC, Motor Drives, and Lidar Applications

The EPC2052 offers power systems designers a 100 V, 13.5 mΩ, power transistor capable of 74 A pulsed in an extremely small chip-scale package.  In a 48 V – 12 V DC-DC Power Converters these new generation eGaN FETs achieved greater than 97% efficiency at 500 kHz and greater than 96% Efficiency at 1 MHz

EL SEGUNDO, Calif. — March 2019 — Efficient Power Conversion (EPC) announces the EPC2052, a 100 V GaN transistor with a maximum RDS(on) of 13.5mΩ and a 74 A pulsed output current for high efficiency power conversion in a tiny 2.25mm2 footprint.

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Categories: Press Releases

Automotive Qualified eGaN FETs Help Lidar Systems ‘See’ Better, Increase Efficiency, and Reduce Costs in 48 V Automotive Power Systems

Automotive Qualified eGaN FETs Help Lidar Systems ‘See’ Better, Increase Efficiency, and Reduce Costs in 48 V Automotive Power Systems

Efficient Power Conversion (EPC) expands AEC Q101 product family with the addition of two new gallium nitride devices.

EL SEGUNDO, Calif.— January 2019 — EPC announces successful AEC Q101 qualification of two additional eGaN devices, addressing a range of applications in the automotive industry and other harsh environments.  The new products, EPC2206, and EPC2212 are both discrete transistors in wafer level chip-scale packaging (WLCS) with 80 VDS and 100 VDS ratings respectively.

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Building the Smallest and Most Efficient 48 V to 5 - 12 V DC to DC using eGaN FETs and ICs

The Power and Evolution of GaN – Part 2 of 6 part series

Building the Smallest and Most Efficient 48 V to 5 - 12 V DC to DC using eGaN FETs and ICs

With the power architecture transition from a 12 V to a 48 V bus power distribution in modern data centers, there is an increased demand to improve 48 V power conversion efficiency and power density. In this context, DC-DC converters designed using eGaN® FETs and ICs provide a high efficiency and high power density solution. Additionally, with the advent of 48 V power systems in mild-hybrid, hybrid and plug-in hybrid electric vehicles, GaN transistors can provide a reduction in size, weight, and Bill of Materials (BOM) cost.

Power Systems Design
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GaN-Based VRM Hybrid Converter Achieves 95% Efficiency for 48V to 1-2V/10A Power Conversion

GaN-Based VRM Hybrid Converter Achieves 95% Efficiency for 48V to 1-2V/10A Power Conversion

With the emergence of the 48V bus architecture, a new hybrid converter using gallium nitride (GaN) transistors can be employed which achieves a peak efficiency that exceeds 95% and with 225W/in3 power density. Of great interest for data center applications, where light load efficiency is critical for energy savings, the converter efficiency is kept higher than 90% down to a 20% load.

PowerPulse
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eGaN FET-Based Synchronous Rectification

eGaN FET-Based Synchronous Rectification

As GaN-on-Si becomes more common in DC-DC converter designs, questions often arise from experienced designers about the impact of the unique characteristics of GaN transistors when used as synchronous rectifiers (SRs). In particular, the third quadrant off-state characteristics, better known as “body diode” conduction in Si MOSFETs, which is activated during converter dead-time, is of interest. For this article, the focus will be on the similarities and differences of Si MOSFETs and eGaN® FETs when operated as a “body diode” and outline their relative advantages and disadvantages.

Bodo’s Power Systems
By David Reusch & John Glaser
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eGaN Technology is Coming to Cars

eGaN Technology is Coming to Cars

Efficient Power Conversion (EPC) has successfully completed automotive AEC Q101 qualification for two gallium nitride devices.

EL SEGUNDO, Calif.— May 2018 — EPC announces successful AEC Q101 qualification of two eGaN® devices, opening a range of applications in automotive and other harsh environments.  The products, EPC2202 and EPC2203, are both discrete transistors in wafer level chip-scale packaging (WLCS) with 80 VDS ratings and will soon be followed with several more discrete transistors and integrated circuits designed for the harsh automotive environment. 

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Categories: Press Releases

GaN Power Modules Deliver Over 1400 W/in3 for 48 V – 12 V DC-DC and Up to 10 MHz for Point-of-Load Power Conversion

GaN Power Modules Deliver Over 1400 W/in3 for 48 V – 12 V DC-DC and Up to 10 MHz for Point-of-Load Power Conversion

Efficient Power Conversion’s EPC9204 and EPC9205 power modules demonstrate the efficiency enhancements and significant size reduction achieved in DC-DC power conversion using high frequency switching eGaN® power transistors and integrated circuits.

EL SEGUNDO, Calif.— March 2018 — Efficient Power Conversion Corporation (EPC) introduces two new GaN power modules for DC-DC conversion, increasing efficiency across the 48 V to point-of-load power architecture. The EPC9205 is a high-power density PCB-based power module for 48 V – 12 V conversions while the EPC9204 address the 20 V – point-of-load conversion with an ultra-thin profile PCB-based power module.

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GaN-Based 48 V to 12 V Regulated Power Supply Development Board Delivers over 1250 W per Cubic Inch and Over 96% Efficiency

GaN-Based 48 V to 12 V Regulated Power Supply Development Board Delivers over 1250 W per Cubic Inch and Over 96% Efficiency

Efficient Power Conversion’s EPC9130 five-phase development board demonstrates the extreme size reduction and efficiency enhancement for power conversion achieved using high frequency switching eGaN® power transistors.

EL SEGUNDO, Calif.— March 2018 —Efficient Power Conversion Corporation (EPC) introduces EPC9130 48 V − 12 V non-isolated, fully regulated development board.  This five-phase board with 12 A per phase has a maximum output current of 60 amps, making the board capable of over 700 W. The EPC9130 provides extremely high-power density exceeding 1250 W per cubic inch, and over 96% efficiency.

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Renesas Electronics Ships Space Industry’s First Radiation-Hardened 100V and 200V GaN FET Power Supply Solutions

Renesas Electronics Ships Space Industry’s First Radiation-Hardened 100V and 200V GaN FET Power Supply Solutions

SL70040SEH Low Side GaN FET Driver Powers ISL7002xSEH GaN FETs in Launch Vehicle and Satellite Power Supplies

TOKYO--(BUSINESS WIRE)--Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today announced the space industry’s first radiation-hardened, low side Gallium Nitride (GaN) field effect transistor (FET) driver and GaN FETs that enable primary and secondary DC/DC converter power supplies in launch vehicles and satellites, as well as downhole drilling and high reliability industrial applications. These devices power ferrite switch drivers, motor control driver circuits, heater control modules, embedded command modules, 100V and 28V power conditioning, and redundancy switching systems.

Business Wire
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Charge Cell Phones to Laptops Simultaneously – EPC Introduces Complete Class 4 AirFuel Alliance Compatible Wireless Power Demonstration Kit Capable of Transmitting up to 33 W

Charge Cell Phones to Laptops Simultaneously – EPC Introduces Complete Class 4 AirFuel Alliance Compatible Wireless Power Demonstration Kit Capable of Transmitting up to 33 W

Superior characteristics of eGaN® FETs, such as low output capacitance, low input capacitance, low parasitic inductances, and small size make them ideal for increasing efficiency in highly resonant, AirFuel wireless power transfer systems.

EL SEGUNDO, Calif.—August 2017 — Efficient Power Conversion Corporation (EPC) today announces the availability of a complete class 4 wireless power charging kit, the EPC9120. The system can transmit up to 33 W while operating at 6.78 MHz (the lowest ISM band).  The purpose of this demonstration kit is to simplify the evaluation process of using eGaN FETs for highly efficient wireless power transfer.  The EPC9120 utilizes the high frequency switching capability of EPC gallium nitride transistors to facilitate wireless power systems with full power efficiency between 80% and 90% under various operating conditions.

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Categories: Press Releases

48V-to-1V Conversion - the Rebirth of Direct-to-Chip Power

48V-to-1V Conversion - the Rebirth of Direct-to-Chip Power

During last week's PCIM Europe event in Nuremberg, Germany, direct 48V-to-1V power conversion architectures were a significant topic. “The use of GaN switches in 48V-to-1V direct dc-dc converters can improve system performance by 30%, compared with today’s best silicon-based designs,” commented Alex Lidow, CEO of Efficient Power Conversion.

PowerPulse
May 31, 2017
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EPC to Show Life-changing Applications Using eGaN Technology at 2016 Applied Power Electronics and Exposition Conference (APEC)

EPC to Show Life-changing Applications Using eGaN Technology at 2016 Applied Power Electronics and Exposition Conference (APEC)

EPC will exhibit more than 20 demonstrations showing how GaN technology’s superior performance is changing the way we live and company experts will deliver six technical presentations on GaN FET technology at APEC® 2016, the premier global event in applied power electronics

EL SEGUNDO, Calif. — March, 2016 — The EPC team will be presenting six technical presentations on gallium nitride (GaN) technology and applications at APEC 2016 in Long Beach, California from March 20th through the 24th. In addition, the company will feature its latest eGaN® FETs and IC’s as well as their customers’ end products that are enabled by eGaN technology. Demonstrations will include wireless power systems that span the full power range of Qi and AirFuel standards and a multi-mode solution, a single stage 48 V – 1 V DC-DC converter, 3-D real-time LiDAR imaging camera, and an LTE compatible envelope tracking supply in booth #2244.

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How to get 500W in an eighth-brick converter with GaN, part 1

How to get 500W in an eighth-brick converter with GaN, part 1

DC-DC “brick” converters are familiar to many engineers, and have wide usage in telecommunications, networking, data centers, and many other applications. This is due in large part to adoption of a common footprint defined by the Distributed-power Open Standards Alliance (DOSA) and generally accepted input/output voltage ranges. These converters provide isolation and voltage step-down, and have become increasingly sophisticated, with features that enable advanced system optimization and control.

EDN Network
November 23, 2015
By: John Glaser
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Efficient Power Conversion Corporation (EPC) Publishes DC-DC Conversion Handbook, a Practical Guide to Taking Full Advantage of the Superior Performance of Gallium Nitride (GaN) Transistors

Efficient Power Conversion Corporation (EPC) Publishes DC-DC Conversion Handbook, a Practical Guide to Taking Full Advantage of the Superior Performance of Gallium Nitride (GaN) Transistors

EPC’s DC-DC Conversion handbook is a guide showing how to achieve increased efficiency and power density in Datacom equipment and other power conversion applications using GaN power transistors.

EL SEGUNDO, Calif. – September 2015 – The demand for information is growing at unprecedented rates and society’s insatiable appetite for communication, computing and downloading, is driving this demand. With emerging technologies, such as, cloud computing and the internet of things, not to mention the 300 hours of video being loaded to YouTube every minute, this trend for more and faster access to information is showing no signs of slowing…and this is the challenge that motivated the writing of this practical engineering handbook – DC-DC Conversion: A Supplement to GaN Transistors for Efficient Power Conversion.

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500 Watt Eighth Brick DC-DC Converter Achieves 96.7% Efficiency – EPC Demonstration Board Featuring eGaN FETs Delivers Fully Regulated, Isolated Output 12 V, 42 A Output

500 Watt Eighth Brick DC-DC Converter Achieves 96.7% Efficiency – EPC Demonstration Board Featuring eGaN FETs Delivers Fully Regulated, Isolated Output 12 V, 42 A Output

EPC9115 DC-DC bus converter showcases superior performance achieved using eGaN FETS with designated drivers in a conventional fully regulated, isolated eighth brick DC-DC converter topology.

EL SEGUNDO, Calif. — March 2015 — Efficient Power Conversion Corporation (EPC) introduces the EPC9115, a demonstration design for a 12 V, 42 A output with an input range of 48 V to 60 V. The demonstration board features enhancement-mode (eGaN®) power transistors – the EPC2020 (60 V) and EPC2021 (80V) – along with the LM5113 half-bridge driver and UCC27611 low side driver from Texas Instruments. The power stage is a conventional hard-switched 300 kHz isolated buck converter.

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How To GaN: Paralleling High Speed eGaN FETS for High Current Applications

This column evaluated the ability to parallel eGaN® FETs for higher output current applications by addressing the challenges facing paralleling high speed, low parasitic devices, and demonstrated an improved paralleling technique. For experimental verification of this design method, four parallel half bridges in an optimized layout were operated as a 48 V to 12 V, 480 W, 300 kHz, 40 A buck converter, and achieved efficiencies above 96.5%, from 35% to 100% load. The design method achieved superior electrical and thermal performance compared to conventional paralleling methods and demonstrated that high speed GaN devices can be effectively paralleled for higher current operation.

EEWeb
By: Alex Lidow
April, 2014

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Yole: Power To Dominate GaN-On-Silicon Market

Yole Développement is releasing, this week, the "GaN-on-Si Substrate Technology and Market for LED and Power Electronics" report. Analysts believe that GaN-on-silicon technology will be widely adopted by power electronics applications. The power electronics market addresses applications such as AC to DC or DC to AC conversion, which is always associated with substantial energy losses that increase with higher power and operating frequencies. Incumbent silicon based technology is reaching its limit and it is difficult to meet higher requirements.

http://powerelectronicsworld.net/article/0/79693-yole-power-to-dominate-gan-on-silicon-market.html

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