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Time-of-Flight (ToF) Demonstration Board Drives Lasers with Currents up to 28 A with 1.2 Nanosecond Pulses Using Automotive Qualified eGaN Technology

Time-of-Flight (ToF) Demonstration Board Drives Lasers with Currents up to 28 A with 1.2 Nanosecond Pulses Using Automotive Qualified eGaN Technology

Ultra-fast transition eGaN® FETs from Efficient Power Conversion (EPC) on the EPC9144 drive high current pulses up to 28 A with pulse widths as low as 1.2 ns, enhancing the accuracy, precision, and processing speed of ToF and flash lidar systems.

EL SEGUNDO, Calif.— January, 2020 — EPC announces the availability of the EPC9144, a 15 V, 28 A high current pulsed laser diode driver demonstration board.

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Categories: Press Releases

EPC Introduces 100 V eGaN Power Transistor – 30 Times Smaller Than Comparable Silicon and Capable of 97% Efficiency at 500 kHz

EPC Introduces 100 V eGaN Power Transistor – 30 Times Smaller Than Comparable Silicon and Capable of 97% Efficiency at 500 kHz

The EPC2051 offers power systems designers a 100 V, 25 mΩ, power transistor capable of 37 A pulsed in an extremely small chip-scale package.  These new devices are ideal for applications such as 48V power converters, LiDAR, and LED lighting.

EL SEGUNDO, Calif. — July 2018 — Efficient Power Conversion (EPC) announces the EPC2051, a 100 V GaN transistor with a maximum RDS(on) of 25 mΩ and a 37 A pulsed output current for high efficiency power conversion in a tiny 1.1mm2 footprint.

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Categories: Press Releases

EPC Introduces 350 V eGaN Power Transistor − 20 Times Smaller Than Comparable Silicon

EPC Introduces 350 V eGaN Power Transistor − 20 Times Smaller Than Comparable Silicon

The EPC2050 offers power systems designers a 350 V, 65 mΩ, 26 A power transistor in an extremely small chip-scale package.  These new devices are ideal for applications such as multi-level converters, EV charging, solar power inverters, and motor drives.

EL SEGUNDO, Calif. — April 2018 — Efficient Power Conversion announces the EPC2050, a 350 V GaN transistor with a maximum RDS(on) of 65 mΩ and a 26 A pulsed output current. Applications include EV charging, solar power inverters, motor drives, and multi-level converter configurations, such as a 3-level, 400 V input to 48 V output LLC converter for telecom or server power supplies.

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Charge Cell Phones to Laptops Simultaneously – EPC Introduces Complete Class 4 AirFuel Alliance Compatible Wireless Power Demonstration Kit Capable of Transmitting up to 33 W

Charge Cell Phones to Laptops Simultaneously – EPC Introduces Complete Class 4 AirFuel Alliance Compatible Wireless Power Demonstration Kit Capable of Transmitting up to 33 W

Superior characteristics of eGaN® FETs, such as low output capacitance, low input capacitance, low parasitic inductances, and small size make them ideal for increasing efficiency in highly resonant, AirFuel wireless power transfer systems.

EL SEGUNDO, Calif.—August 2017 — Efficient Power Conversion Corporation (EPC) today announces the availability of a complete class 4 wireless power charging kit, the EPC9120. The system can transmit up to 33 W while operating at 6.78 MHz (the lowest ISM band).  The purpose of this demonstration kit is to simplify the evaluation process of using eGaN FETs for highly efficient wireless power transfer.  The EPC9120 utilizes the high frequency switching capability of EPC gallium nitride transistors to facilitate wireless power systems with full power efficiency between 80% and 90% under various operating conditions.

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eGaN Technology from Efficient Power Conversion (EPC) Takes a Quantum Leap in Both Performance and Cost

eGaN Technology from Efficient Power Conversion (EPC) Takes a Quantum Leap in Both Performance and Cost

EPC introduces EPC2045 and EPC2047 eGaN® FETs that are half the size of prior generation eGaN transistors with significantly higher performance.

EL SEGUNDO, Calif. — March 2017 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs and ICs advances the performance capability while lowering the cost of off-the-shelf gallium nitride transistors with the introduction of the EPC2045 (7 mΩ, 100 V) and the EPC2047 (10 mΩ, 200 V) eGaN FETs. Applications for the EPC2045 include single stage 48 V to load Open Rack server architectures, point-of-load converters, USB-C, and LiDAR. Wireless charging, multi-level AC-DC power supplies, robotics, and solar micro inverters are example applications for the 200 V EPC2047.

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Categories: Press Releases

Efficient Power Conversion (EPC) Widens the Performance Gap with 7 mΩ 200 V, and 5 mΩ 150 V Gallium Nitride Power Transistors

Efficient Power Conversion (EPC) Widens the Performance Gap with 7 mΩ 200 V, and 5 mΩ 150 V Gallium Nitride Power Transistors

eGaN®power transistors continue to raise the bar for power conversion performance. Lower on-resistance, lower capacitance, higher current, and superior thermal performance enable high power density converters.

EL SEGUNDO, Calif.—May 2015 — Efficient Power Conversion Corporation (EPC) announces the introduction of two eGaN FETs that raise the bar for power conversion performance. These products have a maximum operating temperature of 150°C and pulsed currents capabilities of 260 A (150 V EPC2033) and 140 A (EPC2034). Applications include DC-DC converters, synchronous rectification in DC/DC and AC/DC converters, motor drives, LED lighting, and industrial automation.

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Efficient Power Conversion (EPC) Introduces Monolithic Gallium Nitride Power Transistor Half Bridge Enabling over 97% System Efficiency for a 48 V to 12 V Buck Converter at 20 A Output

Efficient Power Conversion (EPC) Introduces Monolithic Gallium Nitride Power Transistor Half Bridge Enabling over 97% System Efficiency for a 48 V to 12 V Buck Converter at 20 A Output

Efficient Power Conversion introduces the EPC2102, 60 V and EPC2103, 80 V half bridges, expanding its award winning family of gallium nitride power transistor products.

EL SEGUNDO, Calif. — January 2014 — EPC announces the EPC2102, 60 V and the , 80 V enhancement-mode monolithic GaN transistor half bridges.

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Efficient Power Conversion (EPC) Introduces Enhancement Mode 450 V Gallium Nitride Power Transistors for High Frequency Applications

Efficient Power Conversion (EPC) Introduces Enhancement Mode 450 V Gallium Nitride Power Transistors for High Frequency Applications

EPC2027 eGaN® FET offers power systems designers a 450 V power transistor capable of 4ns rise times for high frequency DC-DC converters and medical diagnostic instruments.

EL SEGUNDO, Calif. — January 2015 — EPC announces the EPC2027, a 450 V normally off (enhancement mode) power transistor for use in applications requiring high frequency switching in order to achieve higher efficiency and power density. Applications enhanced by high voltage higher switching speeds include ultra-high frequency DC-DC converters, medical diagnostic equipment, solar power inverters, and LED lighting.

The EPC2027 has a voltage rating of 450 V and maximum RDS(on) of 400 mΩ with a 4 A output. It is available in passivated die form with solder bars for efficient heat dissipation and ease of assembly. The EPC2027 measures 1.95 mm x 1.95 mm for increased power density.

“As off-line adapters and inverters increasingly push toward smaller size, less weight, and higher power density, the demand for corresponding higher voltage and faster switching speeds is increasing. The 450 V EPC2027 allows power designers to increase the switching frequency of their off-line power conversion systems for increased efficiency and smaller footprint,” said Alex Lidow, EPC’s co-founder and CEO.

Development Board

The EPC9044 development board, featuring the EPC2027, is in a half bridge configuration with on board gate driver, gate drive supply and bypass capacitors. This 2” x 1.5” board has been laid out for optimal switching performance and contains all critical components for easy evaluation of the EPC2027 eGaN® FET.

Price and Availability

The EPC2027 eGaN FETs are priced for 1K units at $5.81 each

The EPC9044 development boards are priced at $137.75 each

Both are available for immediate delivery from Digi-Key at http://www.digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en

Design Information and Support for eGaN FETs:

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, Read more

Categories: Press Releases

Efficient Power Conversion (EPC) Introduces Wide-Input, 20 Amp GaN-Based Buck Converter Demonstration Board for Telecom, Industrial, and Medical Applications

Efficient Power Conversion (EPC) Introduces Wide-Input, 20 Amp GaN-Based Buck Converter Demonstration Board for Telecom, Industrial, and Medical Applications

EPC9118 demonstrates size reduction and efficiency enhancement for power conversion readily achieved using high frequency switching eGaN® FETs for supply voltages up to 48 V or more.

EL SEGUNDO, Calif.—October 2014 — Efficient Power Conversion Corporation (EPC) introduces the EPC9118, a fully functional buck power conversion demonstration circuit. This board is a 30 V-60 V input to 5 V, 20 A maximum output current, 400 kHz buck converter. It features the EPC2001 and EPC2015 enhancement-mode (eGaN®) field effect transistors (FETs), as well as the LTC3891 buck controller. This buck converter design is ideal for distributed power solutions in telecom, industrial, and medical applications.

The EPC9118 board contains the complete power stage (including eGaN FETs, driver, inductor and input/output caps) in a compact 1” x 1.3” layout to showcase the performance that can be achieved using the eGaN FETs and a traditional MOSFET controller together. The EPC9118 demonstration board is 2.5” square and contains a fully closed loop buck converter with optimized control loop.

Despite its small size, the board has peak power efficiency greater than 93% capable of delivering 20 amps at 5 volts with a 36 V input. To assist the design engineer, the EPC9118 demonstration board is easy to set up and contains various probe points to facilitate simple waveform measurement and efficiency calculation.

A Quick Start Guide containing set up procedures, circuit diagram, performance curves and a bill of material is available at http://epc-co.com/epc/Products/DemoBoards/EPC9118.aspx

EPC9118 demo boards are priced at $237.19 each and are available for immediate delivery from Digi-Key at http://www.digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en

Design Information and Support for eGaN FETs:

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and Read more

Categories: Press Releases

Efficient Power Conversion (EPC) Widens the Performance Gap with the Aging Power MOSFET with “Off-the-Shelf” High Performance Gallium Nitride Power Transistors

eGaN® power transistors continue to raise the bar for power conversion performance. Lower on-resistance, lower capacitance, higher current, and superior thermal performance enable power converters with greater than 98% efficiency.

To tweet this news, copy and paste http://bit.ly/EPCXLPR1407 to your Twitter handle with #GaNFET

EL SEGUNDO, Calif.—July 2014 — Efficient Power Conversion Corporation (EPC) announces the introduction of six new-generation power transistor products and corresponding development boards. Ranging from 30 V to 200 V, these products provide significant reduction in RDS(on) greatly increasing their output current capability in applications such as high power density DC-DC converters, Point-of-Load (POL) converters, synchronous rectification in DC/DC and AC/DC converters, motor drives, LED lighting, and industrial automation.

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Categories: Press Releases

Efficient Power Conversion (EPC) Introduces High Efficiency Wireless Power Transfer Demonstration System Operating at 6.78 MHz Featuring High Frequency Gallium Nitride (eGaN) FETs

The superior characteristics of eGaN® FETs, such as low output capacitance, low input capacitance, low parasitic inductances, and small size make them ideal for increasing efficiency in highly resonant, Rezence (A4WP) compliant, wireless power transfer systems.

EL SEGUNDO, Calif.—June, 2014 — Efficient Power Conversion Corporation (EPC) today announce the introduction of demonstration boards for wireless power transfer in an innovative high performance topology; Zero Voltage Switching (ZVS) Class-D. The EPC9506 and EPC9507 amplifier (source) boards utilize the high frequency switching capability of EPC gallium nitride transistors to facilitate wireless power systems with greater than 75% efficiency.

Wireless Power Transfer

The popularity of highly resonant wireless power transfer has increased over the last few years and particularly for applications targeting portable device charging. The end applications are varied and evolving quickly from mobile device charging, to life-extending medical implementations, to safety-critical hazardous environments.

The requirements of wireless energy transfer systems include high efficiency, low profile, robustness to changing operating conditions and, in some cases, light weight. These requirements translate into designs that need to be efficient and able to operate at high switching speeds without a bulky heatsink. Furthermore the design must be able to operate over a wide range of coupling and load variations. The fast switching capability of eGaN FETs is ideal for highly resonant power transfer applications.

Amplifier Demonstration Boards (EPC9506 / EPC9507)

The EPC9506 and EPC9507 are high efficiency, A4WP compliant, Zero Voltage Switching (ZVS), Voltage Mode Class-D wireless power transfer amplifier (source) boards capable of delivering up to 35 W into a DC load while operating at up to 6.78 MHz. The boards feature the 40 V EPC2014 (EPC9506) and the 100 V EPC2007 (EPC9507) eGaN FETs. Both boards are configured to operate in either a half-bridge topology (for single-ended con¬figuration) or full-bridge topology (for differential configuration), and include the gate driver(s) and oscillator that ensure operation of the boards at a fixed frequency.

Price and Availability

EPC9506 and EPC9507 demonstration boards are priced at $418.95 each and are available for immediate delivery from Digi-Key at http://digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en

Future: EPC’s New ZVS Class-D Wireless Power Transfer System Demonstration Kits

In addition to the stand-alone amplifier (source) boards available now, EPC will be introducing shortly a family of full system demonstration kits. The full kits include the amplifier (source) board, a Class 3 A4WP compliant sour Read more

Categories: Press Releases

Efficient Power Conversion (EPC) Introduces Development Board for High Current, High Step-Down Buck Converter Applications

EPC9016 development board features 40 V, 33 A enhancement mode gallium nitride (eGaN®) FETs in parallel operation increasing current capability by 67% and optimum layout techniques maximize efficiency.

EL SEGUNDO, Calif.— April, 2014 — Efficient Power Conversion Corporation (EPC) introduces the EPC9016 half-bridge development board for high current, high step-down voltage, buck Intermediate Bus Converter (IBC) applications using eGaN FETs. In this application two low-side (synchronous rectifier) field effect transistors (FETs) are connected in parallel since they will be conducting for a much longer period compared to the single high side (control) FET.

eGaN FETs have superior current sharing capability compared to silicon MOSFETs, making them ideal for parallel operation. This development board expands upon EPC’s work on optimal layout based on ultra-low inductance packages. The optimum layout techniques used increase efficiency while reducing voltage overshoot and EMI.

The EPC9016 development board is a 40 V maximum device voltage, 33 A maximum output current, half-bridge and featuring the EPC2015 eGaN FET with an onboard LM5113 gate driver. The half-bridge configuration contains a single topside device and two parallel bottom devices and is recommended for high step-down ratio buck converter applications such as point-of-load converters and buck converters for non-isolated telecom infrastructure.

The development board is 2” x 1.5” and contains all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation.

A Quick Start Guide, http://epc-co.com/epc/Products/DemoBoards/EPC9016.aspx, is included with the EPC9016 development board for reference and ease of use.

EPC9016 development boards are priced at $130 each and are available for immediate delivery from Digi-Key at http://www.digikey.com/suppliers/us/efficient-power-conversion.page?&lang=en

Design Information and Support for eGaN FETs:

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converte Read more

Categories: Press Releases

Efficient Power Conversion Corporation (EPC) Market-leading Development Board Featuring eGaN® FETs Receives Industry Awards in China

Award winning EPC9005 development board facilitates rapid design of high frequency switching power conversion systems based on the 40 V EPC2014 eGaN FET

EL SEGUNDO, Calif. – November 2013 - Efficient Power Conversion Corporation (www.epc-co.com; www.epc-co.com.cn) announces that its EPC9005 development board has been recognized with two industry awards in China; namely, Optimized Development Award of the Top 10 Power Products Award 2013 presented by Electronics Product China and Leading Product Award of China Innovation Award 2013 presented by EDN China magazine.

“It is an honor to receive these recognitions as an industry leading product from Electronics Product China and EDN China magazine”, noted Alex Lidow, CEO, Efficient Power Conversion Corporation. “Our EPC9005 board facilitates rapid design of high frequency switching power conversion systems based on our 40 V EPC2014 eGaN FET. The EPC9005 is a ready-made and easy-to-connect development board complete with well-documented engineering support materials.”

The EPC9005 measures 2” x 1.5” and contains two EPC2014 eGaN FET in a half-bridge configuration using Texas Instruments LM5113 gate driver, supply and bypass capacitors. The board contains all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation.

For details, please visit our website with the below information:

About Electronics Product China

Electronic Products China, a leading electronics industry magazine, judges products on achievement of a significant technological advancement, an innovative design, or a substantial enhancement in price/performance. A presentation ceremony for the winners of this year’s awards took place on September 12, 2013 in Beijing during the magazine’s Power Conference.

About EDN China’s Innovation Award

EDN’s annual Innovation Awards started in the United States 23 years ago to recognize achievements in the design of ICs and related products. Today, it has developed to become one of the most prestigious awards for electronics design engineering in North America. Introduced to China in 2005 as the EDN China Innovation Awards, it has steadily grown to become one of the mainland China’s most anticipated and respected accolades for the electronics design industry, with winning products gaining wide recognition in the local market.

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as servers, wireless power tra Read more

Categories: Press Releases

Efficient Power Conversion (EPC) Introduces Eighth Brick DC-DC Power Converter Demonstration Board Featuring (eGaN®) FETs

EPC9102 showcases the performance that can be achieved using the EPC2001 eGaN FETs and the LM5113 eGaN FET driver from Texas Instruments

EL SEGUNDO, Calif.—May, 2012 — Efficient Power Conversion Corporation (EPC) introduces the EPC9102, a fully functional eighth brick converter. This board is a 36 V – 60 V input to 12 V output, 375 kHz phase-shifted full bridge (PSFB) eighth brick converter with 17 A maximum output current. The EPC9102 uses the 100 V EPC2001 eGaN FETs in conjunction with the recently introduced LM5113 100V half-bridge gate driver from Texas Instruments. The LM5113 is the industry’s first driver to optimally drive and fully release the benefits of enhancement mode gallium nitride FETs. The EPC9102 demonstrates the performance capabilities of high switching frequency eGaN FETs when coupled with this eGaN driver.

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Categories: Press Releases

Efficient Power Conversion (EPC) Introduces Buck Power Conversion Demonstration Board Featuring (eGaN®) FETs

EPC9101 demonstrates size reduction and efficiency enhancement for buck power conversion achieved using high frequency switching eGaN power transistors

EL SEGUNDO, Calif.—October 2011 — Efficient Power Conversion Corporation (EPC) introduces the EPC9101, a fully functional buck power conversion demonstration circuit. This board is an 8 V-19 V input to 1.2 V, 18 A maximum output current, 1MHz buck converter. It uses the EPC2014 and EPC2015 eGaN FETs in conjunction with the recently introduced National LM5113 100V half-bridge gate driver from Texas Instruments. The LM5113 is the industry’s first driver designed specifically for enhancement mode gallium nitride FETs. The EPC9101 demonstrates the reduced size and performance capabilities of high switching frequency eGaN FETs when coupled with this dedicated eGaN driver.

The power stage footprint of the EPC9101 circuit is only 8mm x 16mm (about 0.2 square inches) and about 8mm high when taking components from both sides into consideration. Despite its small size, the board has a peak power efficiency of 88% and is capable of delivering 18 amps of current at 1.2 volts.

To assist the design engineer, the EPC9101 is easy to set up to evaluate the performance of the EPC2014 and EPC2015 eGaN FETs and LM5113 gate driver. The board is intended for bench evaluation with low ambient temperature and convection cooling. Additional heat sinking and forced-air cooling can be used to evaluate beyond the rated current capability of the demonstration circuit.

A similar fully functional buck power conversion demonstration board, the LM5113LLPEVB, is available from Texas Instruments. This board features the LM5113 driver in operation with 100V EPC2001 eGaN FETs. The LM5113LLPEVB demo board is a 15 V – 60 V input to10 V, 10 A, 800kHZ, buck converter. Like the EPC9101, this board demonstrates the size and performance enhancement that can be achieved using the EPC2001 eGaN FETs and the LM5113 gate driver.

A Quick Start Guide, http://epc-co.com/epc/documents/guides/EPC9101_qsg.pdf, is included with the EPC9101 demo board for reference and ease of use.

EPC9101 demo boards are priced at $150.00 each and are available for immediate delivery from Digi-Key at http://digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en

Design Tools Available Featuring EPC eGaN FETs with the Texas Instruments LM5113 driver:

Design Information an Read more

Categories: Press Releases
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