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EPC’s 50 W, 12 V to 60 V eGaN FET-based Boost Converter Provides an Efficient, Simple, Low-cost Solution for Laptop and PC Monitor Backlighting

EPC’s 50 W, 12 V to 60 V eGaN FET-based Boost Converter Provides an Efficient, Simple, Low-cost Solution for Laptop and PC Monitor Backlighting

A 50 W, 12 V to 60 V eGaN® FET-based synchronous boost converter achieves 95.3% peak efficiency with low temperature rise with a simple, low-cost topology.

EL SEGUNDO, Calif.— October, 2021 — EPC announces the availability of the EPC9162, a bi-directional buck or reverse-boost converter.  This demonstration board features the 100 V EPC2052 for the synchronous converter, and the EPC2038 in the synchronous bootstrap FET circuit. 

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New Textbook, GaN Power Devices and Applications from Efficient Power Conversion (EPC) Now Available

New Textbook, GaN Power Devices and Applications from Efficient Power Conversion (EPC) Now Available

GaN devices and applications, such as lidar, DC-DC conversion, motor drive, and low-cost satellites using gallium nitride FETs and ICs, form the focus of this book, GaN Power Devices and Applications.

EL SEGUNDO, Calif. — October 2021 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, announces the publication of a valuable learning resource for professional engineers, systems designers, and electrical engineering students seeking the latest information on gallium nitride technology and applications. 

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Meeting the Power and Magnetic Design Challenges of Ultra-Thin, High-Power Density 48 V DC-DC Converters for Ultra-Thin Computing Applications

Meeting the Power and Magnetic Design Challenges of Ultra-Thin, High-Power Density 48 V DC-DC Converters for Ultra-Thin Computing Applications

Over the past decade computers, displays, smart phones and other consumer electronics systems have become thinner while also becoming more powerful. As a result, the market continues to increase its demand for thinner power supply solutions with greater power density. This article examines the feasibility of adopting various non-isolated dc-dc step-down topologies for an ultra-thin 48 V to 20 V rated to 250 W. It examines the pros and cons of various non-isolated topologies and how the topology impacts the choice of the power transistors and magnetics, specifically the inductors, as these two components account for the bulk of the losses in a converter. The article also undertakes a detailed analysis of the challenges to design thin inductors for these applications, including examining the factors that drive inductor losses, inductor size, and the design tradeoffs, including the impact on EMI. For this work, an ultrathin multilevel converter topology was selected, built, and tested. The experimental results obtained from this converter were used to further refine the operating setting and component selections that resulted in a peak efficiency exceeding 98%.

Michael de Rooij, EPC
Quentin Laidebeur, Würth Elektronik

IEEE Power Electronics Magazine
September, 2021
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EPC Launches Scalable 1.5 kW 48 V/12 V DC-DC Demonstration Board Powered by Gallium Nitride (GaN) FETs for More Efficient, Smaller, Faster, Bidirectional Converters

EPC Launches Scalable 1.5 kW 48 V/12 V DC-DC Demonstration Board Powered by Gallium Nitride (GaN) FETs for More Efficient, Smaller, Faster, Bidirectional Converters

The EPC9137 is a two-phase 48 V – 12 V bidirectional converter that delivers 1.5 kW with 97% efficiency in small solution size for mild-hybrid cars and battery power backup units.

EL SEGUNDO, Calif.— May, 2021 — EPC announces the availability of the EPC9137, a 1.5 kW, two-phase 48 V – 12 V bidirectional converter that operates with 97 % efficiency in a very small footprint. The design of this demonstration board is scalable; that is, two converters can be paralleled to achieve 3 kW or three converters can be paralleled to achieve 4.5 kW. The board features four EPC2206 100 V eGaN® FETs and is controlled by a module that includes the Microchip dsPIC33CK256MP503 16-bit digital controller.

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Categories: Press Releases

Extreme GaN – What Happens When eGaN FETs are Exposed to Voltage and Current Levels Well Above Data Sheet Limits

Extreme GaN – What Happens When eGaN FETs are Exposed to Voltage and Current Levels Well Above Data Sheet Limits

Recently, Efficient Power Conversion (EPC) did a series of tests to take eGaN® FETs beyond their data sheet limits to quantify the effects of large amounts of overstress voltage and current and the results are published here for the first time.

Bodo’s Power Systems
May, 2021
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Efficient Power Conversion (EPC) Revolutionizes Lidar System Design with Release of eToF Laser Driver IC Family of Products

Efficient Power Conversion (EPC) Revolutionizes Lidar System Design with Release of eToF Laser Driver IC Family of Products

Efficient Power Conversion (EPC) introduces the first of a new gallium nitride (GaN) integrated circuit (IC) product family offering higher performance and smaller solution size for time-of-flight (ToF) lidar applications including robotics, drones, 3D sensing, and autonomous cars.

EL SEGUNDO, Calif.— February 2021 — EPC announces the introduction of a laser driver that integrates a 40 V, 10 A FET with integrated gate driver and 3.3 logic level input in a single chip for time-of-flight lidar systems used in robotics, surveillance systems, drones, autonomous cars, and vacuum cleaners.

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Categories: Press Releases

Thermal Management of Chip-Scale GaN Devices

Thermal Management of Chip-Scale GaN Devices

This article discusses the challenges that thermal management raises due to increase power density, especially with chip-scale packaging (CSP). What is sometimes overlooked, however, is that CSP eGaN® power FETs and integrated circuits have excellent thermal performance when mounted on standard printed circuit board (PCBs) with simple methods for attaching heat sinks. Simulations, supported by experimental verification, examine the effect of various parameters and heat flow paths to provide guidance on designing for performance versus cost.

Bodo’s Power Systems
February, 2021
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EPC Releases Physics-Based Models That Project eGaN Device Lifetime in New Reliability Report

EPC Releases Physics-Based Models That Project eGaN Device Lifetime in New Reliability Report

Efficient Power Conversion (EPC) publishes Phase-12 Reliability Report adding to the extensive knowledge found in their first eleven reports. With this report, EPC demonstrates field experience of 226 billion eGaN ® device hours and a robustness capability unmatched by silicon power devices.

EL SEGUNDO, Calif.— January 2021 — EPC announces its Phase-12 Reliability Report, documenting the strategy used to achieve a remarkable field reliability record. eGaN devices have been in volume production for more than eleven years and have demonstrated very high reliability in over 226 billion hours of operation, most of which are in vehicles, LTE base stations, and satellites, to name just a few applications with rigorous operating conditions.

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Efficient Power Conversion (EPC) to Showcase GaN Technology-Enabled Consumer Applications at All-Digital Consumer Electronics Show (CES)

Efficient Power Conversion (EPC) to Showcase GaN Technology-Enabled Consumer Applications at All-Digital Consumer Electronics Show (CES)

Join gallium nitride (GaN) technology experts in the EPC virtual booth at CES to explore how GaN enables enhanced features and performance in consumer electronics by providing higher efficiency, smaller size, and lower cost semiconductor FET and IC solutions.

EL SEGUNDO, Calif. — January 2021 — Efficient Power Conversion (EPC) announced that it will demonstrate the power of eGaN® technology to boost performance in game-changing consumer applications including self-driving cars, emobility, drones, robots, and 48-volt power conversion at the All-Digital Consumer Electronics Show (CES) January 11th through the 14th.

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GaN Reliability Testing Beyond AEC for Automotive Lidar

GaN Reliability Testing Beyond AEC for Automotive Lidar

An automotive application using GaN power devices in high volume is lidar(light detection and ranging) for autonomous vehicles. Lidar technology provides information about a vehicle’s surroundings, thus requiring high accuracy and reliability to ensure safety and performance. This article will discus a novel testing mechanism developed by EPC to test eGaN devices beyond the qualification requirements of the Automotive Electronics Council (AEC) for the specific use case of lidar.

Power Systems Design
December, 2020
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EPC Launches 300 W Bidirectional 16th Brick for High-Density Computing and Data Centers Powered by Gallium Nitride (GaN) Integrated Power Stage

EPC Launches 300 W Bidirectional 16th Brick for High-Density Computing and Data Centers Powered by Gallium Nitride (GaN) Integrated Power Stage

The EPC2152 ePower™ Stage enables higher performance and smaller solution size for high power density, low-cost DC-DC conversion demonstrated in the EPC9151 power module.

EL SEGUNDO, Calif.— December, 2020 — EPC announces the availability of the EPC9151, a 300 W bidirectional DC-DC voltage regulator in the in the very small 16th brick format which is just 33 mm x 22.9 mm (1.3 x 0.9 in). The EPC9151 power module features Microchip’s dsPIC33CK digital signal controller (DSC) with the EPC2152 ePower™ Stage integrated circuit from EPC to achieve greater than 95% efficiency in a 300 W 48 V to/from 12 V converter design.  Additional phases can be added to this scalable 2-phase design to further increase power.

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Efficient Power Conversion Wins ASPENCORE’s World Electronics Achievement Award as 2020 Contributor of the Year

Efficient Power Conversion Wins ASPENCORE’s World Electronics Achievement Award as 2020 Contributor of the Year

Efficient Power Conversion Corporation (EPC), the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs and ICs, has won the Contributor of the Year award of the prestigious World Electronics Achievement Awards (WEAA) 2020 for Dr. Alex Lidow, CEO and co-founder of Efficient Power Conversion.

The WEAA scheme honors products, companies and individuals that have made outstanding contributions to the innovation and development of the electronics industry worldwide. A committee comprising of ASPENCORE global senior industry analysts and online users from Asia, the US and Europe select the winners. ASPENCORE is the largest electronics industry media and SaaS group in the world featuring media titles including EE Times and EDN.

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Efficient Power Conversion (EPC) Strengthens European Sales Team

Efficient Power Conversion (EPC) Strengthens European Sales Team

Stefan Werkstetter appointed as New Director of Sales for EMEA to focus on assisting customers in the adoption of eGaN® FETs and Integrated Circuits for applications including DC-DC, lidar, motor control, and other leading-edge power conversion systems

EL SEGUNDO, Calif. — November 2020 — To support the continued adoption of gallium nitride (GaN) FETs and Integrated Circuits in the European market, Efficient Power Conversion Corporation (EPC) is pleased to announce the appointment of Stefan Werkstetter as Director, Sales EMEA.

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Digi-Key Electronics Partners with Efficient Power Conversion (EPC) to Host eGaN Motor Drive Webinar

Digi-Key Electronics Partners with Efficient Power Conversion (EPC) to Host eGaN Motor Drive Webinar

THIEF RIVER FALLS, Minnesota, USA – Digi-Key Electronics, the leading global electronic components distributor, announced that it has partnered with Efficient Power Conversion Corporation (EPC) to host a webinar on how to harness the power of eGaN FETS and ICs for motor drives. The webinar will take place on October 28 at 8 a.m. PST.

Register for the Harness the Power of GaN for Smaller, Lighter, More Precise Motor Drives webinar at EPC’s webinar page

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Testing Gallium Nitride Devices to Failure Under Extreme Voltage and Current Stress

Testing Gallium Nitride Devices to Failure Under Extreme Voltage and Current Stress

Standard qualification testing for semiconductors typically involves stressing devices at-or-near the limits specified in their data sheets for a prolonged period of time, or for a certain number of cycles, with the goal of demonstrating zero failures. By testing parts to the point of failure, an understanding of the amount of margin beyond the data sheet limits can be developed, but more importantly, an understanding of the intrinsic failure mechanisms of the semiconductor can be found.

Bodo’s Power Systems
September, 2020
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