News

Sign up today to get the latest news and updates from EPC on new product announcements, applications work, and much more. Sign up for EPC email updates or text "EPC" to 22828.

Efficient Power Conversion Corporation (EPC) Market-leading Development Board Featuring eGaN® FETs Receives Industry Awards in China

Award winning EPC9005 development board facilitates rapid design of high frequency switching power conversion systems based on the 40 V EPC2014 eGaN FET

EL SEGUNDO, Calif. – November 2013 - Efficient Power Conversion Corporation (www.epc-co.com; www.epc-co.com.cn) announces that its EPC9005 development board has been recognized with two industry awards in China; namely, Optimized Development Award of the Top 10 Power Products Award 2013 presented by Electronics Product China and Leading Product Award of China Innovation Award 2013 presented by EDN China magazine.

“It is an honor to receive these recognitions as an industry leading product from Electronics Product China and EDN China magazine”, noted Alex Lidow, CEO, Efficient Power Conversion Corporation. “Our EPC9005 board facilitates rapid design of high frequency switching power conversion systems based on our 40 V EPC2014 eGaN FET. The EPC9005 is a ready-made and easy-to-connect development board complete with well-documented engineering support materials.”

The EPC9005 measures 2” x 1.5” and contains two EPC2014 eGaN FET in a half-bridge configuration using Texas Instruments LM5113 gate driver, supply and bypass capacitors. The board contains all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation.

For details, please visit our website with the below information:

About Electronics Product China

Electronic Products China, a leading electronics industry magazine, judges products on achievement of a significant technological advancement, an innovative design, or a substantial enhancement in price/performance. A presentation ceremony for the winners of this year’s awards took place on September 12, 2013 in Beijing during the magazine’s Power Conference.

About EDN China’s Innovation Award

EDN’s annual Innovation Awards started in the United States 23 years ago to recognize achievements in the design of ICs and related products. Today, it has developed to become one of the most prestigious awards for electronics design engineering in North America. Introduced to China in 2005 as the EDN China Innovation Awards, it has steadily grown to become one of the mainland China’s most anticipated and respected accolades for the electronics design industry, with winning products gaining wide recognition in the local market.

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as servers, wireless power tra Read more

Categories: Press Releases

Efficient Power Conversion Corporation (EPC) Expands eGaN® FET Family with Second Generation 40 Volt, 16 milliohm Power Transistor

EPC2014 delivers high frequency switching with enhanced performance in lead-free, RoHS compliant package.

EL SEGUNDO, Calif. – August 2011 - Efficient Power Conversion Corporation (www.epc-co.com) announces the introduction of the EPC2014 as the newest member of EPC’s second-generation enhanced performance eGaN FET family. The EPC2014 is environmentally friendly; being lead free, RoHS-compliant (Restriction of Hazardous Substances), and halogen free.

The EPC2014 FET is a 1.87 mm2, 40 VDS, 10 A device with a maximum RDS(ON) of 16 milliohms with 5 V applied to the gate. This eGaN FET provides significant performance advantages over the first-generation EPC1014 eGaN device. The EPC2014 has an increase in maximum junction temperature rating to 150 degrees C and is fully enhanced at a lower gate voltage than the predecessor EPC1014.

Compared to a state-of-the-art silicon power MOSFET with similar on-resistance, the EPC2014 is much smaller and has many times superior switching performance. Applications that benefit from eGaN FET performance include high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, hard-switched and high frequency circuits.

“In addition to increases in performance, this new generation enhancement mode gallium nitride FET is offered as lead-free, halogen-free and RoHS-compliant,” noted Alex Lidow, co-founder and CEO.

In 1k piece quantities, the EPC2014 is priced at $1.12 and is immediately available through Digi-Key Corporation at http://digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en

Design Support

An application note detailing the performance improvements of the EPC2014 eGaN FET can be found at http://epc-co.com/epc/documents/product-training/Characteristics_of_Second_Generation_eGaN_FETs.pdf

Table 1 – Summary of EPC2014 Specification Ratings

About EPC

EPC is the leader in enhancement mode Gallium Nitride based power management devices. EPC is the first to introduce enhancement-mode Gallium-Nitride-on-Silicon (eGaN) FETs as power MOSFET replacements in applications such as servers, netbooks, notebooks, LED lighting, cell phones, base stations, micro-inverters, and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs. Visit our web site: www.epc-co.com.

eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press contact:

Efficient Power Conversion: Joe Engle tel: 310.986.0350 email: [email protected]

Read more
Categories: Press Releases
RSS