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Efficient Power Conversion (EPC) Widens the Performance Gap with 7 mΩ 200 V, and 5 mΩ 150 V Gallium Nitride Power Transistors

Efficient Power Conversion (EPC) Widens the Performance Gap with 7 mΩ 200 V, and 5 mΩ 150 V Gallium Nitride Power Transistors

eGaN®power transistors continue to raise the bar for power conversion performance. Lower on-resistance, lower capacitance, higher current, and superior thermal performance enable high power density converters.

EL SEGUNDO, Calif.—May 2015 — Efficient Power Conversion Corporation (EPC) announces the introduction of two eGaN FETs that raise the bar for power conversion performance. These products have a maximum operating temperature of 150°C and pulsed currents capabilities of 260 A (150 V EPC2033) and 140 A (EPC2034). Applications include DC-DC converters, synchronous rectification in DC/DC and AC/DC converters, motor drives, LED lighting, and industrial automation.

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Efficient Power Conversion Corporation (EPC) Expands Industry-Leading Family of Enhancement Mode Gallium Nitride (eGaN®) FETs with Second Generation 200 Volt, 100 milliohm Power Transistor

EPC2012 delivers high frequency switching with enhanced performance in lead-free, RoHS compliant package.

EL SEGUNDO, Calif. – August 2011 - Efficient Power Conversion Corporation (www.epc-co.com) announces the introduction of the EPC2012 as the newest member of EPC’s second-generation enhanced performance eGaN FET family. The EPC2012 is environmentally friendly; being lead free, RoHS-compliant (Restriction of Hazardous Substances), and halogen free.

The EPC2012 FET is a 1.6 mm2 200 VDS device with a maximum RDS(ON) of 100 milliohms with 5 V applied to the gate. This eGaN FET provides significant performance advantages over the first-generation EPC1012 eGaN device. The EPC2012 has an increased pulsed current rating of 15 A (compared with 12 A for the EPC1012), is fully enhanced at a lower gate voltage, and has superior dv/dt immunity due to an improved ratio of QGD/QGS.

Compared to a state-of-the-art silicon power MOSFET with similar on-resistance, the EPC2012 is much smaller and has many times superior switching performance. Applications that benefit from eGaN FET performance include high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, hard-switched and high frequency circuits.

“With the expansion of our family of eGaN FETs, we continue to raise the bar for the performance of gallium nitride FETs. In addition, this new generation of eGaN products are the industry’s first gallium nitride FETs to be offered as lead-free and RoHS-compliant,” said Alex Lidow, co-founder and CEO.

In 1k piece quantities, the EPC2012 is priced at $2.10 and is immediately available through Digi-Key Corporation at http://digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en

Design Support

An application note detailing the performance improvements of the EPC2012 eGaN can be found at http://epc-co.com/epc/documents/product-training/Characteristics_of_Second_Generation_eGaN_FETs.pdf

Table 1 – Summary of EPC2012 Specification Ratings

About EPC

EPC is the leader in enhancement mode Gallium Nitride based power management devices. EPC is the first to introduce enhancement-mode Gallium-Nitride-on-Silicon (eGaN) FETs as power MOSFET replacements in applications such as servers, netbooks, notebooks, LED lighting, cell phones, base stations, micro-inverters, and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs. Visit our web site: www.epc-co.com.

eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press contact:

Efficient Power Conversion: Joe Engle tel: 310.986.0350 email: [email protected]

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Efficient Power Conversion Corporation (EPC) Introduces Industry-Leading Second Generation 200 Volt Enhancement Mode Gallium Nitride (eGaN®) Power Transistor

EPC2010 delivers high frequency switching with enhanced performance in lead-free, RoHS compliant package.

EL SEGUNDO, Calif. – June 2011 - Efficient Power Conversion Corporation (www.epc-co.com) announces the introduction of the EPC2010 as the newest member of EPC’s second-generation enhanced performance eGaNfield effect transistor (FET) family. The EPC2010 is environmentally friendly, being both lead-free and RoHS-compliant (Restriction of Hazardous Substances).

The EPC2010 FET is a 200 VDS device with a maximum RDS(ON) of 25 milliohms with 5 V applied to the gate. This eGaN FET provides significant performance advantages over the first-generation EPC1010 eGaN device. The EPC2010 has an increased pulsed current rating of 60 A (compared with 40 A for the EPC1010), improved RDS(ON) at very low gate voltages, and lower capacitance.

Compared to a state-of-the-art silicon power MOSFET with similar on-resistance, the EPC2010 is smaller and has many times superior switching performance. Applications that benefit from eGaN FET performance include high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, hard-switched and high frequency circuits.

“EPC was the first company to make gallium nitride power FETs commercially available. With our second-generation of products, we are now raising the bar for the performance of gallium nitride FETs. In addition, our new generation of eGaN products are the first gallium nitride FETs to be offered as lead-free and RoHS-compliant,” said Alex Lidow, co-founder and CEO.

In 1k piece quantities, the EPC2010 is priced at $5.06 and is immediately available through Digi-Key Corporation at http://digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en

Design Support

A development board, the EPC9003, is available to demonstrate the performance of the EPC2010 and to expedite design-in efforts. http://epc-co.com/epc/documents/datasheets/EPC2010_datasheet_final.pdf

An application note detailing the performance improvements of the EPC2010 eGaN can be found at http://epc-co.com/epc/documents/product-training/Characteristics_of_Second_Generation_eGaN_FETs.pdf

For Related Information and Support for all eGaN FETs:

 

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