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A roundtable discussion with GaN industry experts hosted by Bodo’s Power Systems. Guests included:
- Alex Lidow, CEO and co-founder of Efficient Power Conversion
- Doug Bailey, Vice President Marketing & Applications Engineering at Power Integrations
- Dilder Chowdhury, Director, Strategic Marketing, Power GaN Technology at Nexperia
- Tom Ribarich, Sr. Director Strategic Marketing at Navitas Semiconductor
For a power system designer who has worked with a power MOSFET, upgrading to an enhancement mode GaN transistor is straightforward. The basic operating characteristics are quite similar and yet there are a few characteristics that need to be considered in an efficient design in order to extract the maximum benefit from this new generation device. EEWeb By: Alex Lidow July, 2013 More ...
The first installment in a new monthly column by Alex Lidow, CEO of EPC, introduces the concept that GaN-on-silicon power devices could be a superior replacement for the aging power MOSFET.
By: Alex Lidow
It has been three years since the commercialization of gallium nitride (GaN) devices as MOSFET replacements in a commercial DC-DC application. With the emergence of GaN devices, coupled with now attainable applications previously not achievable with MOSFET-based FETs, a favorable stage has been set for GaN-device developers to release emerging application potential largely unimagined and untapped.
May 16, 2013
Alex Lidow, the co-inventor of the HEXFET power MOSFET and CEO of Efficient Power Conversion (EPC), describes how their Enhancement Mode Gallium Nitride Transistors (eGAN FETs) work to bring tremendous size and performance advantages over silicon power MOSFETs.
One yardstick to compare enhancement mode GaN (eGaN) power devices with state-of-the-art silicon MOSFETs is FOM. However, beyond these pure mathematical numbers, there are other device and package related parameters that significantly influence in-circuit performance.
By Johan Strydom PHD, Director of Application Engineering, EPC
Power Electronics Technology
September 1, 2010
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Thirty years of silicon power-MOSFET development has taught us that one of the key variables controlling the adoption rate of a disruptive technology is how easy the new technology is to use. This principle has guided the design of EPC’s enhancement-mode GaN (eGaN) transistors. This article explains why eGaN devices are easy to use, describing how they operate and their similarities and differences versus power MOSFETs.
By Johan Strydom
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