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Peregrine Semiconductor Unveils the World’s Fastest GaN FET Driver

Peregrine Semiconductor Unveils the World’s Fastest GaN FET Driver
GaN-based FETs are disrupting the power conversion market and are displacing silicon-based metal–oxide–semiconductor field-effect transistors (MOSFETs). Compared to MOSFETs, GaN FETs operate much faster and have higher switching speeds in the smallest possible volume. The promise of GaN is that it can dramatically reduce the size and weight of any power supply. To reach their performance potential, these high-performance GaN transistors need an optimized gate driver. Peregrine Semiconductor July 12, 2016 Read article Read more
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Driving eGaN™ FETs Both gate and Miller capacitances are significantly lower

As enhancement mode gallium-nitride-on-silicon transistors (eGaN™) gain wider acceptance as the successor to the venerable - but aged - power MOSFET, designers have been able to improve power conversion efficiency, size, and cost. eGaN FETs, however, are based on a relatively new and immature technology with limited design infrastructure to quickly design and implement products. By Johan Strydom PhD, Director of Application Engineering EPC Bodo’s Power Systems November, 2010 Read the article Read more
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