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GaN-based FETs are disrupting the power conversion market and are displacing silicon-based metal–oxide–semiconductor field-effect transistors (MOSFETs). Compared to MOSFETs, GaN FETs operate much faster and have higher switching speeds in the smallest possible volume. The promise of GaN is that it can dramatically reduce the size and weight of any power supply. To reach their performance potential, these high-performance GaN transistors need an optimized gate driver.
July 12, 2016
As enhancement mode gallium-nitride-on-silicon transistors (eGaN™) gain wider acceptance as the successor to the venerable - but aged - power MOSFET, designers have been able to improve power conversion efficiency, size, and cost. eGaN FETs, however, are based on a relatively new and immature technology with limited design infrastructure to quickly design and implement products.
By Johan Strydom PhD, Director of Application Engineering EPC
Bodo’s Power Systems
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