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Efficient Power Conversion (EPC) Introduces Family of Commercial High-Lead Enhancement Mode Gallium Nitride (eGaN®) FETs

Commercial high-lead versions of EPC’s popular enhancement mode gallium nitride (eGaN) FETs, the EPC2801, EPC2815, and EPC2818, are now available. EL SEGUNDO, Calif. — October 2013 — ( Efficient Power Conversion Corporation (EPC) introduces devices with a high-lead solder termination ideal for applications requiring higher temperature solder. The EPC2801, EPC2815, and EPC2818 feature high-lead content (95% lead, 5% tin) solder terminations. The EPC2801 is a 100 VDS device with a maximum RDS(ON) of 7 milliohms with 5 V applied to the gate. The EPC2815 ... Read more
Categories: Press Releases

Enhancing the inefficiency of an RF power amp: The envelope tracking (ET) system

In this EDN article Steve Taranovich explores the envelope tracking system as a potential solution to the notoriously inefficient wideband power amplifiers (PAs) used I wireless telecom and other base station transmitters. An ET solution implementing high speed eGaN FETs in a multi-phase buck converter is explored. Read more
Categories: Articles

EPC Addresses Global GaN Power Management Product Demand; Leverages Digi-Key for Global Distribution

Global electronic components distributor Digi-Key Corporation, the industry leader in electronic component selection, availability and delivery, today announced new inventory of Gallium Nitride (GaN) power management products, available for immediate shipment as part of an exclusive global distribution agreement with Efficient Power Conversion (EPC)

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Categories: GaN Market News

Efficient Power Conversion (EPC) Introduces Development Board Showcasing 100 V Enhancement Mode Gallium Nitride (eGaN®) FETs in Parallel for High Current Applications

EPC9017 development board features eGaN FETs in parallel operation using optimum layout techniques to increase current capability and efficiency. EL SEGUNDO, Calif.— October, 2013 — Efficient Power Conversion Corporation (EPC) introduces the EPC9017 half bridge development board for high current, high step down voltage, buck Intermediate Bus Converter (IBC) applications using eGaN FETs. In this application two low side (synchronous rectifier) FETs are connected in parallel since they will be conducting for a much longer period compared to the single high side (Control) FET. ... Read more
Categories: Press Releases