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In this installment of the ‘How to GaN’ series we will discuss a new family of eGaN FETs that is keeping Moore’s Law alive with significant gains in key switching figures of merit that widen the performance gap with the power MOFET in high frequency power conversion.
By: Alex Lidow
EPC9118 demonstrates size reduction and efficiency enhancement for power conversion readily achieved using high frequency switching eGaN® FETs for supply voltages up to 48 V or more.
EL SEGUNDO, Calif.—October 2014 — Efficient Power Conversion Corporation (EPC) introduces the EPC9118, a fully functional buck power conversion demonstration circuit. This board is a 30 V-60 V input to 5 V, 20 A maximum output current, 400 kHz buck converter. It features the EPC2001 and EPC2015 enhancement-mode (eGaN®) field effect transistors (FETs), as well as the LTC3891 buck ...
GaN Transistors for Efficient Power Conversion” textbook provides both theory and applications for gallium nitride transistors.
EL SEGUNDO, CA – October 2014 – Efficient Power Conversion Corporation (EPC) announce the publication of the second edition of “GaN Transistors for Efficient Power Conversion,” a textbook written by power conversion industry experts and published by John Wiley and Sons.
This textbook is designed to provide power system design engineering students, as well as practicing engineers, basic technical and application-focused ...
The market for SiC and GaN power semiconductors is expected to grow at 63 percent CAGR between 2011 and 2017, reaching around $500 million, according to The Information Network, a US market research company.
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